IRFS3307PBF N-Channel 75V 120A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS3307PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 120A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolescence, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
Rds On (Max) @ Id, Vgs	6.3	mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs	180	nC @ 10V
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFS3307PBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 120A at Tc
Package Type: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must support -55°C to 175°C
Gate Drive Voltage: Compatible with 10V drive voltage

Secondary Compatibility Factors:

Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit stress
Power Dissipation: Higher ratings provide thermal margin
Vgs (Max): Must accommodate ±20V gate voltage

Substitute parts are grouped into two categories based on voltage and current ratings:

Category A - Direct Voltage/Current Match (75V, 120A): Parts maintaining 75V Vdss and 120A Id rating provide direct functional equivalence.

Category B - Voltage/Current Variants (60V-80V, 75A-100A): Parts with different voltage or current ratings require application-level verification but offer alternative solutions for designs with reduced voltage or current margins.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A) @ Tc	Rds On (mOhm)	Qg (nC)	Pd (W)	Status	Package
IRFS3307PBF	Infineon	75	120	6.3 @ 75A, 10V	180 @ 10V	200	Obsolete	D2PAK
STB140NF75T4	STMicroelectronics	75	120	7.5 @ 70A, 10V	218 @ 10V	310	Active	D2PAK
PSMN008-75B,118	Nexperia USA Inc.	75	75	8.5 @ 25A, 10V	122.8 @ 10V	230	Active	D2PAK
BUK9609-75A,118	NXP USA Inc.	75	75	8.5 @ 25A, 10V	N/A	230	Active	D2PAK
PSMN5R0-80BS,118	Nexperia USA Inc.	80	100	5.1 @ 25A, 10V	101 @ 10V	270	Active	D2PAK
PSMN6R5-80BS,118	Nexperia USA Inc.	80	100	6.9 @ 15A, 10V	71 @ 10V	210	Active	D2PAK
SQM120N06-06_GE3	Vishay Siliconix	60	120	6 @ 30A, 10V	145 @ 10V	230	Active	D2PAK
STB150NF55T4	STMicroelectronics	55	120	6 @ 60A, 10V	190 @ 10V	300	Active	D2PAK
FDB5800	onsemi	60	80	6 @ 80A, 10V	135 @ 10V	242	Active	D2PAK
STB100N6F7	STMicroelectronics	60	100	5.6 @ 50A, 10V	30 @ 10V	125	Active	D2PAK

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent:

STB140NF75T4 (STMicroelectronics) is the primary substitute for IRFS3307PBF. This part maintains identical voltage (75V) and current (120A) ratings with D2PAK packaging. The device is active product status with RoHS3 compliance and unlimited moisture sensitivity level. Higher power dissipation rating (310W vs. 200W) provides improved thermal performance. Gate charge specification (218 nC) is within acceptable range for 10V drive circuits.

Secondary Recommendations - Voltage/Current Variants:

PSMN5R0-80BS,118 and PSMN6R5-80BS,118 (Nexperia USA Inc.) offer 80V voltage rating with 100A current capability. These parts are suitable for applications where voltage margin above 75V is acceptable. Both devices feature active product status, RoHS3 compliance, and improved Rds On characteristics. PSMN5R0-80BS,118 provides superior on-resistance (5.1 mOhm) and lower gate charge (101 nC).

SQM120N06-06_GE3 (Vishay Siliconix) maintains 120A current rating with 60V voltage specification. This part is qualified to AEC-Q101 automotive standard and suitable for applications operating below 75V. Active product status and RoHS3 compliance are confirmed.

STB150NF55T4 (STMicroelectronics) provides 120A current at 55V voltage rating with superior power dissipation (300W). This part is suitable for lower-voltage applications and offers improved thermal characteristics.

Compliance and Certification Status:

All recommended substitute parts are active product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). Parts designated with AEC-Q101 qualification (SQM120N06-06_GE3, BUK9609-75A,118) are suitable for automotive applications.

Frequently Asked Questions (FAQ)

Q1: Can STB140NF75T4 directly replace IRFS3307PBF without circuit modification?

A: STB140NF75T4 maintains identical Vdss (75V) and Id (120A) ratings with D2PAK packaging. Both devices support ±20V gate voltage and operate across -55°C to 175°C temperature range. Direct substitution is supported at the component level. Circuit-level verification of gate drive timing and thermal management is recommended due to different Rds On and gate charge characteristics.

Q2: What is the voltage derating requirement when using PSMN5R0-80BS,118 or PSMN6R5-80BS,118 in place of IRFS3307PBF?

A: These parts feature 80V Vdss rating compared to 75V specification of IRFS3307PBF. No derating is required for applications operating at or below 75V. The additional 5V margin provides enhanced reliability in transient overvoltage conditions. Application-level verification of maximum drain-source voltage exposure is necessary.

Q3: Are there current rating limitations when substituting with SQM120N06-06_GE3?

A: SQM120N06-06_GE3 maintains 120A continuous drain current rating identical to IRFS3307PBF. The 60V voltage rating is the primary design constraint. This part is suitable only for applications where maximum drain-source voltage does not exceed 60V. Voltage margin analysis is required before selection.

Q4: What packaging considerations apply to all substitute parts?

A: All recommended substitute parts use D2PAK (TO-263-3) surface mount package with identical pinout and thermal tab configuration. PCB layout modifications are not required. Thermal interface material and heatsink mounting remain compatible across all listed parts.

Q5: How do gate charge differences affect circuit design?

A: IRFS3307PBF specifies 180 nC gate charge at 10V. Substitute parts range from 30 nC (STB100N6F7) to 218 nC (STB140NF75T4). Lower gate charge reduces gate drive circuit current requirements and switching losses. Higher gate charge increases drive circuit stress. Gate driver selection and PCB layout should be verified for parts with significantly different Qg specifications.

Q6: Which substitute part offers the lowest on-resistance?

A: PSMN5R0-80BS,118 provides the lowest Rds On specification at 5.1 mOhm (measured at 25A, 10V). This represents improved conduction efficiency compared to IRFS3307PBF at 6.3 mOhm (measured at 75A, 10V). Lower on-resistance reduces power dissipation and heat generation in high-current applications.

Q7: Are automotive-qualified alternatives available?

A: SQM120N06-06_GE3 (Vishay Siliconix) and BUK9609-75A,118 (NXP USA Inc.) are both qualified to AEC-Q101 automotive standard. These parts are suitable for automotive and industrial applications requiring third-party qualification documentation.

Q8: What is the thermal performance comparison between IRFS3307PBF and recommended substitutes?

A: IRFS3307PBF specifies 200W maximum power dissipation. STB140NF75T4 provides 310W, PSMN5R0-80BS,118 provides 270W, and STB150NF55T4 provides 300W. Higher power dissipation ratings indicate improved thermal performance and reduced junction temperature rise under identical operating conditions. Thermal management design should account for these differences.

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