IRFS3207ZPBF N-Channel MOSFET 75V 120A Equivalent & Substitute Parts

Part Overview

The IRFS3207ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 120A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and delivers 300W maximum power dissipation. This part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	120	A (Tc)
On-State Resistance (Rds On) @ 75A, 10V	4.1	mOhm
Gate Threshold Voltage (Vgs(th)) @ 150µA	4	V
Gate Charge (Qg) @ 10V	170	nC
Power Dissipation (Max)	300	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS3207ZPBF is determined by the following critical parameters:

Voltage Rating (Vdss): Substitute parts must equal or exceed 75V. Parts rated at 80V or higher provide voltage margin while maintaining compatibility.

Continuous Drain Current (Id): Substitute parts must support 120A or greater at 25°C to handle equivalent load conditions.

On-State Resistance (Rds On): Lower or equal Rds On values ensure equivalent or improved thermal performance and reduced power dissipation.

Package Compatibility: TO-263-3 (D2PAK) and equivalent surface mount packages (H2PAK-2, PG-TO263-3) are mechanically compatible with standard PCB layouts.

Operating Temperature Range: All substitutes must support -55°C to 175°C (TJ) to maintain functional equivalence across thermal extremes.

Gate Charge (Qg): Similar gate charge values ensure compatible drive circuit requirements and switching performance.

Substitutes are grouped into two categories: MFR Recommended (manufacturer-approved alternatives with active product status) and Direct Alternatives (functionally equivalent parts from other manufacturers).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power (W)	Package	Status
IRFS3207ZPBF	Infineon	75	120	4.1	170	300	TO-263-3	Discontinued
IPB025N08N3GATMA1	Infineon	80	120	2.5	206	300	PG-TO263-3	Active
IPB035N08N3GATMA1	Infineon	80	100	3.5	117	214	PG-TO263-3	Active
IPB049NE7N3GATMA1	Infineon	75	80	4.9	68	150	PG-TO263-3	Obsolete
STH140N8F7-2	STMicroelectronics	80	90	4.0	96	200	H2PAK-2	Active
FDB050AN06A0	onsemi	60	80	5.0	80	245	TO-263	Active
IXTA140N055T2	IXYS	55	140	5.4	82	250	TO-263	Active
IXTA200N055T2	IXYS	55	200	4.2	109	360	TO-263AA	Active
IXTA230N075T2-7	IXYS	75	230	4.2	178	480	TO-263-7	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	D2PAK	Active

Engineering Selection Recommendations

Primary Recommendation: IPB025N08N3GATMA1

The IPB025N08N3GATMA1 (Infineon OptiMOS™) is the preferred substitute. It maintains 120A continuous drain current, exceeds the 75V voltage requirement at 80V, and delivers superior on-state resistance (2.5 mOhm vs. 4.1 mOhm), resulting in lower power dissipation and improved thermal performance. The part is Active status with full RoHS3 compliance and unlimited moisture sensitivity rating. The PG-TO263-3 package is mechanically compatible with standard D2PAK PCB layouts. Inventory availability is 16,811 units.

Secondary Recommendation: STB140NF75T4

The STB140NF75T4 (STMicroelectronics STripFET™ III) provides exact voltage and current matching at 75V/120A with identical D2PAK packaging. Active product status ensures long-term availability. Higher on-state resistance (7.5 mOhm) and gate charge (218 nC) require verification against drive circuit specifications. Inventory: 2,749 units.

Alternative for Higher Current Applications: IXTA230N075T2-7

The IXTA230N075T2-7 (IXYS TrenchT2™) matches the 75V voltage rating while providing 230A continuous drain current and 480W power dissipation. The TO-263-7 package requires PCB layout verification for pin compatibility. Active status with 959 units in stock.

Not Recommended: FDB050AN06A0

The FDB050AN06A0 operates at 60V, below the 75V requirement of the original part. Voltage derating may be necessary depending on application maximum operating voltage. Use only if circuit design permits 60V operation.

Not Recommended: IPB049NE7N3GATMA1

This part is Obsolete status and provides only 80A continuous current, insufficient for 120A applications. Avoid for new designs.

Frequently Asked Questions (FAQ)

Q: Can I use IPB035N08N3GATMA1 as a direct replacement for IRFS3207ZPBF?

A: IPB035N08N3GATMA1 is not a direct replacement. While it shares the 80V voltage rating and D2PAK-compatible package, it is rated for 100A continuous drain current, below the 120A requirement. Use only if your application requires less than 100A.

Q: What is the difference between PG-TO263-3 and TO-263-3 packaging?

A: Both are mechanically and electrically compatible D2PAK variants. PG-TO263-3 is the Infineon designation for their OptiMOS™ series. Standard PCB footprints accept both packages without modification.

Q: Does IXTA230N075T2-7 use a different pin configuration than IRFS3207ZPBF?

A: Yes. IXTA230N075T2-7 uses TO-263-7 (6 leads + tab) versus TO-263-3 (2 leads + tab). PCB layout and footprint must be verified before substitution. Consult IXYS datasheet for pin assignments.

Q: Is STH140N8F7-2 compatible with my existing PCB designed for D2PAK?

A: STH140N8F7-2 uses H2PAK-2 packaging, which differs from D2PAK. While both are surface mount, the footprint and lead configuration are not identical. PCB redesign or adapter consideration is required.

Q: Why does IPB025N08N3GATMA1 have lower Rds On than IRFS3207ZPBF?

A: IPB025N08N3GATMA1 uses Infineon's OptiMOS™ technology, which provides improved on-state resistance characteristics compared to the older HEXFET® series. Lower Rds On reduces conduction losses and heat generation.

Q: Can I substitute IXTA200N055T2 for IRFS3207ZPBF in a 75V circuit?

A: No. IXTA200N055T2 is rated for 55V maximum drain-to-source voltage. Using it in a 75V circuit exceeds the device rating and creates failure risk. Voltage rating must equal or exceed circuit maximum voltage.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification. All are REACH Unaffected and classified as EAR99 for export control purposes.

Q: What is the gate charge difference between IPB025N08N3GATMA1 and IRFS3207ZPBF?

A: IPB025N08N3GATMA1 has 206 nC gate charge versus 170 nC for IRFS3207ZPBF. This 36 nC increase requires slightly higher gate drive energy but remains within typical PWM controller output specifications. Verify gate driver current capability if operating at frequencies above 100 kHz.

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