IRFS3207PBF N-Channel 75V 170A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS3207PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 170A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is designed for high-current switching applications requiring efficient power dissipation up to 300W. The part is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	170	A
On-State Resistance (Rds On) @ 75A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	260	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRFS3207PBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 170A at 25°C
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: Must support -55°C to 175°C
Gate Drive Voltage: 10V nominal operation
RoHS3 Compliance and MSL Level 1 rating

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Affects switching speed and drive circuit requirements
Power Dissipation Rating: Must support thermal requirements of the application

Substitute parts are grouped into two categories:

Category A - Direct Functional Equivalents (Vdss ≥ 75V, Id ≥ 170A): These parts maintain or exceed the original specifications and provide direct replacement capability.

Category B - Reduced Current Alternatives (Vdss ≥ 75V, Id < 170A): These parts operate at the same voltage rating but with reduced current capacity. Selection requires application-level current analysis to confirm suitability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRFS3207PBF	Infineon	75	170	4.5	260	300	D2PAK	Discontinued
IXFA230N075T2-7	IXYS	75	230	4.2	178	480	TO-263-7	Active
IXTA200N055T2	IXYS	55	200	4.2	109	360	TO-263AA	Active
STB160N75F3	STMicroelectronics	75	120	4.0	85	330	D2PAK	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	D2PAK	Active
PSMN005-75B,118	Nexperia	75	75	5.0	165	230	D2PAK	Active
PSMN4R4-80BS,118	Nexperia	80	100	4.5	125	306	D2PAK	Active
BUK764R4-60E,118	Nexperia	60	100	4.5	82	234	D2PAK	Active
BUK964R4-40B,118	Nexperia	40	75	4.0	64	254	D2PAK	Active
IPB049NE7N3GATMA1	Infineon	75	80	4.9	68	150	PG-TO263-3	Obsolete
IPB054N08N3GATMA1	Infineon	80	80	5.4	69	150	PG-TO263-3	Active

Engineering Selection Recommendations

For Direct Replacement (Vdss = 75V, Id ≥ 170A):

The IXFA230N075T2-7 is the only active substitute that exceeds the original current rating (230A vs. 170A) while maintaining 75V voltage rating. This part operates in the TO-263-7 package, which is mechanically compatible with D2PAK footprints but includes additional leads. The lower gate charge (178 nC vs. 260 nC) and higher power dissipation rating (480W vs. 300W) provide improved thermal performance. RoHS3 compliance and MSL Level 1 rating are maintained.

For Voltage-Reduced Applications (Vdss < 75V):

The IXTA200N055T2 operates at 55V with 200A continuous current and is suitable for applications where the 75V rating is not required. This part provides superior gate charge characteristics (109 nC) and higher power dissipation (360W). The reduced voltage rating must be verified against circuit requirements before selection.

For Current-Reduced Applications (Id < 170A):

Multiple active alternatives exist for applications requiring less than 170A:

STB160N75F3 (75V, 120A): Maintains voltage rating with lowest on-state resistance (4.0 mOhm) and minimal gate charge (85 nC). Recommended for efficiency-critical designs.
PSMN4R4-80BS,118 (80V, 100A): Provides voltage margin with moderate current capacity and balanced gate charge (125 nC).
STB140NF75T4 (75V, 120A): Alternative 75V option with higher on-state resistance (7.5 mOhm) but higher gate charge (218 nC).

All recommended substitutes maintain RoHS3 compliance, MSL Level 1 rating, and -55°C to 175°C operating temperature range. Product status verification confirms active availability for all primary recommendations.

Frequently Asked Questions (FAQ)

Q1: Can the IXFA230N075T2-7 directly replace the IRFS3207PBF in existing PCB layouts?

The IXFA230N075T2-7 uses a TO-263-7 package versus the D2PAK (TO-263-3) of the original part. While both are surface mount D2PAK variants, the TO-263-7 includes additional leads. PCB footprint compatibility must be verified. The part is mechanically larger and may not fit existing D2PAK pads without layout modification.

Q2: What is the significance of gate charge (Qg) differences between substitutes?

Gate charge directly affects switching speed and drive circuit power consumption. The IXFA230N075T2-7 (178 nC) requires less gate drive energy than the IRFS3207PBF (260 nC), reducing switching losses. Conversely, STB160N75F3 (85 nC) provides the fastest switching response. Drive circuit compatibility must be confirmed for parts with significantly different gate charge values.

Q3: Why do some substitutes have lower current ratings than the original part?

The IRFS3207PBF is a high-current device (170A). Many active substitutes operate at reduced current levels (75A to 120A) due to different die designs and thermal management approaches. Selection of reduced-current parts requires application-level analysis to confirm that peak and continuous current demands do not exceed the substitute's rating.

Q4: Are all listed substitutes RoHS3 compliant?

All substitute parts listed maintain RoHS3 compliance and MSL Level 1 (unlimited moisture sensitivity) rating, matching the original part's environmental specifications. This ensures compatibility with modern manufacturing and supply chain requirements.

Q5: What is the difference between active and discontinued/obsolete product status?

Active parts are currently manufactured and available through distribution channels. Discontinued parts (IRFS3207PBF) are no longer produced. Obsolete parts (IPB049NE7N3GATMA1) are no longer supported by manufacturers. Active substitutes are recommended for new designs and long-term procurement security.

Q6: Can the BUK964R4-40B,118 (40V) substitute for the IRFS3207PBF (75V)?

No. The BUK964R4-40B operates at 40V maximum drain-to-source voltage, which is insufficient for 75V circuit requirements. Using this part in a 75V application will result in device failure. Voltage rating must equal or exceed the original specification.

Q7: How do on-state resistance (Rds On) differences affect circuit performance?

Lower Rds On values reduce conduction losses and heat generation. The STB160N75F3 (4.0 mOhm) dissipates less power than the IRFS3207PBF (4.5 mOhm) at equivalent current levels. For high-current applications, this difference directly impacts thermal management and efficiency. Higher Rds On values (e.g., STB140NF75T4 at 7.5 mOhm) increase power dissipation and require enhanced cooling.

Q8: What package considerations apply when selecting substitutes?

The IRFS3207PBF uses D2PAK (TO-263-3) with 3 leads. The IXFA230N075T2-7 uses TO-263-7 with 7 leads. Both are surface mount variants but have different footprints. The IXTA200N055T2 uses TO-263AA, also a 3-lead variant. PCB layout compatibility must be verified before substitution. Pin assignments and thermal pad configurations may differ between manufacturers.

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