IRFS3107PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS3107PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 195A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	195	A
On-State Resistance (Rds On Max) @ 140A, 10V	3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	240	nC
Power Dissipation (Max)	370	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRFS3107PBF is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must equal or exceed 75V to maintain circuit protection margins.

Current Rating (Id): The substitute must support continuous drain current at or above 195A at 25°C to ensure thermal and electrical performance equivalence.

On-State Resistance (Rds On): The substitute should maintain comparable or lower on-state resistance to preserve power efficiency and thermal characteristics.

Package and Mounting: All substitutes must use D2PAK (TO-263-3) surface mount packaging to ensure mechanical and thermal interface compatibility.

Operating Temperature: All substitutes must support the full -55°C to 175°C operating range.

Gate Drive Voltage: All substitutes operate at 10V gate drive voltage for circuit compatibility.

Substitutes are grouped into two categories:

Category A - Direct Voltage/Current Match (75V, 120A+): STB160N75F3 and PSMN2R8-80BS,118 and PSMN3R3-80BS,118 provide 75V or 80V ratings with 120A continuous current, representing the closest electrical equivalence to the IRFS3107PBF.

Category B - Reduced Current Rating (60V-80V, 100-120A): FDB029N06, PSMN3R0-60BS,118, and SQM120N06-3M5L_GE3 provide lower voltage or current ratings and are suitable only where circuit design permits reduced current capacity.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Status	Package
IRFS3107PBF	Infineon	75	195	3.0	240	370	Discontinued	D2PAK
STB160N75F3	STMicroelectronics	75	120	4.0	85	330	Active	D2PAK
PSMN2R8-80BS,118	Nexperia USA Inc.	80	120	3.0	139	306	Active	D2PAK
PSMN3R3-80BS,118	Nexperia USA Inc.	80	120	3.5	111	306	Active	D2PAK
FDB029N06	Fairchild Semiconductor	60	120	3.1	151	231	Active	D2PAK
PSMN3R0-60BS,118	Nexperia USA Inc.	60	100	3.2	130	306	Active	D2PAK
SQM120N06-3M5L_GE3	Vishay Siliconix	60	120	3.5	330	375	Active	D2PAK

Engineering Selection Recommendations

Primary Substitute - STB160N75F3 (STMicroelectronics):

The STB160N75F3 maintains the 75V voltage rating of the IRFS3107PBF and is actively manufactured. It provides 120A continuous current, which represents a 38% reduction from the original 195A specification. This substitute is appropriate for applications where the circuit design permits operation at reduced current capacity. The device carries ROHS3 compliance and operates across the full -55°C to 175°C temperature range. Gate charge is significantly lower at 85 nC, reducing switching losses.

Secondary Substitute - PSMN2R8-80BS,118 (Nexperia USA Inc.):

The PSMN2R8-80BS,118 provides an 80V voltage rating, exceeding the original 75V specification, with 120A continuous current. This device maintains the 3.0 mOhm on-state resistance of the IRFS3107PBF and is actively manufactured with high inventory availability (52,225 pcs). ROHS3 compliance and full temperature range support are confirmed. Gate charge of 139 nC is moderate.

Tertiary Substitute - PSMN3R3-80BS,118 (Nexperia USA Inc.):

The PSMN3R3-80BS,118 offers 80V rating and 120A continuous current with active product status. On-state resistance is 3.5 mOhm, slightly higher than the original specification. Gate charge is the lowest among all substitutes at 111 nC, providing superior switching performance. ROHS3 compliance and full temperature range support are confirmed.

Lower Voltage Alternatives - FDB029N06, PSMN3R0-60BS,118, SQM120N06-3M5L_GE3:

These devices operate at 60V ratings and are suitable only for applications where circuit design permits reduced voltage headroom. FDB029N06 and PSMN3R0-60BS,118 provide 120A and 100A continuous current respectively. SQM120N06-3M5L_GE3 is AEC-Q101 qualified for automotive applications and provides 120A continuous current with the highest power dissipation rating (375W).

Frequently Asked Questions (FAQ)

Q: Can the STB160N75F3 directly replace the IRFS3107PBF in all applications?

A: The STB160N75F3 maintains the 75V voltage rating and D2PAK package, but provides 120A continuous current versus the original 195A. Direct replacement is possible only in applications where the circuit design operates at or below 120A continuous drain current. Thermal analysis must confirm that the 330W power dissipation rating is sufficient for the application.

Q: What is the primary advantage of PSMN2R8-80BS,118 over STB160N75F3?

A: The PSMN2R8-80BS,118 maintains the 3.0 mOhm on-state resistance of the IRFS3107PBF, whereas the STB160N75F3 increases to 4.0 mOhm. This results in lower conduction losses and reduced thermal generation. Additionally, PSMN2R8-80BS,118 has significantly higher inventory availability.

Q: Why do some substitutes have lower voltage ratings (60V)?

A: Lower voltage substitutes (FDB029N06, PSMN3R0-60BS,118, SQM120N06-3M5L_GE3) are included for applications where circuit design permits reduced voltage headroom. These devices are not suitable for direct replacement in circuits requiring 75V protection margins.

Q: Are all substitutes RoHS3 compliant?

A: Yes, all listed substitutes carry ROHS3 compliance certification. All devices also support the full -55°C to 175°C operating temperature range of the original IRFS3107PBF.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver power requirements. Lower gate charge (STB160N75F3 at 85 nC, PSMN3R3-80BS,118 at 111 nC) reduces switching losses and allows faster switching frequencies. Higher gate charge (SQM120N06-3M5L_GE3 at 330 nC) requires more driver current but may provide improved EMI characteristics.

Q: Is the SQM120N06-3M5L_GE3 suitable for automotive applications?

A: Yes, the SQM120N06-3M5L_GE3 carries AEC-Q101 automotive qualification. However, it operates at 60V rating and is suitable only for automotive applications where circuit design permits reduced voltage headroom compared to the original 75V specification.

Q: Can I use a 80V rated device in a circuit designed for 75V?

A: Yes, devices rated for 80V (PSMN2R8-80BS,118, PSMN3R3-80BS,118) provide additional voltage margin and are suitable for circuits designed for 75V operation. The higher voltage rating does not create compatibility issues.

Q: What packaging considerations apply to these substitutes?

A: All substitutes use D2PAK (TO-263-3) surface mount packaging, identical to the IRFS3107PBF. Mechanical and thermal interface compatibility is maintained across all substitutes. PCB layout and thermal management design do not require modification.

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