IRFS3006PBF N-Channel 60V 195A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS3006PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 195A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for high-current switching applications requiring low on-resistance performance. The part is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRFS3006PBF

Infineon TechnologiesIn Stock: 1343IRFS3006PBF Datasheet

Current PartRFQ

PSMN1R7-60BS,118

Nexperia USA Inc.In Stock: 1917PSMN1R7-60BS,118 Datasheet

MFR RecommendedRFQ

PSMN3R0-60BS,118

Nexperia USA Inc.In Stock: 5651PSMN3R0-60BS,118 Datasheet

MFR RecommendedRFQ

STH260N6F6-2

STMicroelectronicsIn Stock: 33491STH260N6F6-2 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS3006PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal 60V
• FET Type: Must be N-Channel MOSFET
• Technology: Metal Oxide Semiconductor (MOSFET)
• Gate Threshold Voltage (Vgs(th)): Must be compatible at specified gate drive voltage (10V)
• Maximum Gate Voltage (Vgs Max): Must support ±20V
• Operating Temperature Range: Must support -55°C to 175°C
• RoHS Compliance: Must be ROHS3 Compliant
• Mounting Type: Surface Mount

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Substitute must meet or exceed application requirements
• On-Resistance (Rds On): Lower values indicate improved performance
• Power Dissipation: Must be adequate for thermal management
• Package Type: D2PAK or equivalent surface mount packages acceptable

The three substitute parts listed below meet all primary criteria and are electrically compatible with the IRFS3006PBF within their specified current and power ratings.

Parameter Comparison

Engineering Selection Recommendations

PSMN1R7-60BS,118 (Nexperia USA Inc.)

This substitute is suitable for applications where continuous drain current requirements do not exceed 120A. The part is actively manufactured and ROHS3 compliant. Gate charge is significantly lower (137 nC vs. 300 nC), resulting in reduced switching losses. On-resistance at 25A is 2.0 mOhm, providing efficient performance at lower current levels. Power dissipation rating of 306W is lower than the main part, requiring thermal design consideration for high-power applications. D2PAK packaging maintains PCB layout compatibility.

PSMN3R0-60BS,118 (Nexperia USA Inc.)

This substitute is suitable for applications where continuous drain current requirements do not exceed 100A. The part is actively manufactured and ROHS3 compliant. Gate charge is 130 nC, the lowest among all substitutes, minimizing switching losses. On-resistance at 25A is 3.2 mOhm. Power dissipation rating of 306W requires thermal management consideration. Input capacitance of 8079 pF is the lowest among substitutes, beneficial for high-frequency switching applications. D2PAK packaging maintains PCB layout compatibility.

STH260N6F6-2 (STMicroelectronics)

This substitute is suitable for applications where continuous drain current requirements do not exceed 180A. The part is actively manufactured and ROHS3 compliant. Continuous drain current of 180A closely approaches the main part specification of 195A, making this the most suitable substitute for high-current applications. On-resistance at 60A is 2.4 mOhm. Gate charge of 183 nC is moderate. Power dissipation rating of 300W is the lowest among substitutes. H2PAK-2 package is mechanically compatible with D2PAK footprints in most applications, though PCB layout verification is required.

Selection Basis:

All three substitutes meet the mandatory electrical criteria: 60V Vdss, N-Channel MOSFET technology, ±20V Vgs maximum, -55°C to 175°C operating range, and ROHS3 compliance. Selection among substitutes depends on application current requirements and thermal constraints. The STH260N6F6-2 provides the closest current rating match to the discontinued IRFS3006PBF.

Frequently Asked Questions (FAQ)

Q: Can PSMN1R7-60BS,118 or PSMN3R0-60BS,118 be used as direct replacements for IRFS3006PBF?

A: These Nexperia parts are electrically compatible substitutes for applications requiring continuous drain currents of 120A or 100A respectively. The IRFS3006PBF is rated for 195A, so these substitutes are suitable only if your application current does not exceed their ratings. Both parts share identical Vdss (60V), Vgs(th) (4V @ specified Id), Vgs Max (±20V), operating temperature range (-55°C to 175°C), and RoHS3 compliance. D2PAK packaging is identical.

Q: Why is STH260N6F6-2 packaged as H2PAK-2 instead of D2PAK?

A: STH260N6F6-2 uses H2PAK-2 package, which is mechanically and electrically compatible with D2PAK (TO-263-3) footprints. Both packages are surface mount with identical pin configurations and thermal tab. PCB layout verification is required to confirm mechanical fit, as package dimensions may vary slightly.

Q: What is the significance of lower gate charge in PSMN1R7-60BS,118 and PSMN3R0-60BS,118?

A: Gate charge (Qg) of 137 nC and 130 nC respectively, compared to 300 nC in IRFS3006PBF, indicates reduced switching losses and faster switching transitions. This results in lower power dissipation during switching events and improved efficiency in high-frequency applications. Lower gate charge also reduces driver circuit stress.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. PSMN1R7-60BS,118, PSMN3R0-60BS,118, and STH260N6F6-2 are all ROHS3 compliant, matching the compliance status of the discontinued IRFS3006PBF.

Q: Which substitute should I select for a 150A continuous current application?

A: STH260N6F6-2 is the appropriate choice, as it is rated for 180A continuous drain current, exceeding the 150A requirement. PSMN1R7-60BS,118 (120A) and PSMN3R0-60BS,118 (100A) are insufficient for this current level.

Q: What is the difference in power dissipation between the main part and substitutes?

A: IRFS3006PBF is rated for 375W (Tc), while all three substitutes are rated for 300-306W (Tc). Applications requiring the full 375W dissipation capability must use the main part or verify that substitute thermal management is adequate for the specific application.

Q: Can I use these substitutes interchangeably on the same PCB?

A: PSMN1R7-60BS,118 and PSMN3R0-60BS,118 use identical D2PAK packaging and are directly interchangeable on the same PCB. STH260N6F6-2 uses H2PAK-2 packaging, which is mechanically compatible but requires PCB layout verification for mechanical fit and thermal tab connection.

Q: What are the key electrical parameters that determine substitutability?

A: The critical parameters are: Drain-to-Source Voltage (Vdss) = 60V, FET Type = N-Channel, Gate Threshold Voltage (Vgs(th)) = 4V, Maximum Gate Voltage (Vgs Max) = ±20V, Operating Temperature Range = -55°C to 175°C, and RoHS3 compliance. All substitutes meet these criteria. Secondary parameters such as continuous drain current, on-resistance, and power dissipation must be evaluated against specific application requirements.