IRFS23N20DPBF N-Channel MOSFET 200V 24A Equivalent & Substitute Parts

Part Overview

The IRFS23N20DPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 24A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is classified as discontinued at DiGi Electronics. The HEXFET® series component operates across a temperature range of -55°C to 175°C and complies with ROHS3 standards.

Due to the discontinued product status, equivalent substitute parts with matching or superior electrical and mechanical specifications are necessary for design continuity and procurement flexibility. Substitute devices maintain the same 200V voltage rating and D2PAK packaging while offering improved current handling, reduced on-resistance, or enhanced thermal performance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	24	A (Tc)
On-Resistance (Rds On) @ 14A, 10V	100	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V (Max)
Gate Charge (Qg) @ 10V	86	nC (Max)
Input Capacitance (Ciss) @ 25V	1960	pF (Max)
Power Dissipation (Tc)	170	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS23N20DPBF is determined by the following critical parameters:

Mandatory Matching Criteria:

Drain-to-Source Voltage (Vdss): 200V (exact match required)
Package Type: D2PAK (TO-263-3) surface mount configuration
FET Type: N-Channel MOSFET
Mounting Type: Surface Mount
RoHS Compliance: ROHS3 Compliant

Performance Enhancement Criteria (Acceptable Improvements):

Continuous Drain Current (Id): Equal to or greater than 24A
On-Resistance (Rds On): Equal to or lower than 100 mOhm
Power Dissipation (Tc): Equal to or greater than 170W
Operating Temperature Range: Equal to or exceeding -55°C to 175°C

All identified substitute parts meet the mandatory matching criteria and provide equal or superior performance in current handling, on-resistance, and thermal dissipation. Each substitute maintains full compatibility with the original IRFS23N20DPBF footprint and electrical interface requirements.

Parameter Comparison

Parameter	IRFS23N20DPBF (Original)	FQB34N20LTM	PHB33NQ20T,118	PSMN057-200B,118	STB30NF20	STB30NF20L
Manufacturer	Infineon	onsemi	Nexperia USA Inc.	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics
Vdss (V)	200	200	200	200	200	200
Id @ 25°C (A, Tc)	24	31	32.7	39	30	30
Rds On @ 10V (mOhm)	100 @ 14A	75 @ 15.5A	77 @ 15A	57 @ 17A	75 @ 15A	75 @ 15A
Vgs(th) (V, Max)	5.5 @ 250µA	2 @ 250µA	4 @ 1mA	4 @ 1mA	4 @ 250µA	3 @ 250µA
Qg @ 10V (nC, Max)	86	72	32.2	96	38	65
Ciss @ 25V (pF, Max)	1960	3900	1870	3750	1597	1990
Power Dissipation Tc (W)	170	180	230	250	125	150
Operating Temp Range (°C)	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 150	-55 to 175
Package	D2PAK	TO-263 (D2PAK)	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Discontinued	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitute: PSMN057-200B,118 (Nexperia USA Inc.)

The PSMN057-200B,118 provides the highest performance upgrade with 39A continuous drain current, 57 mOhm on-resistance, and 250W thermal dissipation. This TrenchMOS™ series device maintains the full -55°C to 175°C operating range and ROHS3 compliance. Active product status ensures long-term availability and supply chain stability.

Secondary Substitute: PHB33NQ20T,118 (Nexperia USA Inc.)

The PHB33NQ20T,118 offers 32.7A continuous drain current with 77 mOhm on-resistance and 230W thermal dissipation. This TrenchMOS™ device features the lowest gate charge (32.2 nC) among all substitutes, reducing switching losses. Full temperature range support (-55°C to 175°C) and active status provide design flexibility.

Tertiary Substitute: FQB34N20LTM (onsemi)

The FQB34N20LTM delivers 31A continuous drain current with 75 mOhm on-resistance and 180W thermal dissipation. QFET® series technology provides reliable performance. Note: Operating temperature range is -55°C to 150°C, which is 25°C lower than the original specification at the upper limit.

Alternative Substitute: STB30NF20L (STMicroelectronics)

The STB30NF20L provides 30A continuous drain current with 75 mOhm on-resistance and 150W thermal dissipation. This STripFET™ device qualifies for automotive applications (AEC-Q101) and maintains the full -55°C to 175°C operating range. Suitable for designs requiring automotive-grade components.

Alternative Substitute: STB30NF20 (STMicroelectronics)

The STB30NF20 offers 30A continuous drain current with 75 mOhm on-resistance and 125W thermal dissipation. STripFET™ series technology provides stable performance. Operating temperature range is -55°C to 150°C, limiting use in applications requiring extended high-temperature operation.

All substitute parts maintain D2PAK packaging compatibility, 200V voltage rating, and ROHS3 compliance. Selection should be based on specific application requirements for current capacity, thermal performance, temperature range, and switching characteristics.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace IRFS23N20DPBF with any of these substitute parts?

A: Yes, all listed substitute parts are direct replacements from a footprint and electrical interface perspective. All devices use D2PAK (TO-263-3) surface mount packaging with identical pin configuration. However, verify that your circuit design can accommodate the electrical parameter differences, particularly gate threshold voltage and input capacitance variations.

Q2: What is the key difference between PSMN057-200B,118 and PHB33NQ20T,118?

A: Both are Nexperia TrenchMOS™ devices rated for 200V. The PSMN057-200B,118 provides higher current capacity (39A vs. 32.7A) and lower on-resistance (57 mOhm vs. 77 mOhm), resulting in superior thermal performance (250W vs. 230W). The PHB33NQ20T,118 features significantly lower gate charge (32.2 nC vs. 96 nC), reducing switching losses in high-frequency applications.

Q3: Why do some substitutes have lower maximum operating temperature than the original?

A: The FQB34N20LTM and STB30NF20 are rated to 150°C maximum junction temperature, compared to 175°C for the IRFS23N20DPBF. These devices remain suitable for most industrial applications but should not be used in designs requiring operation above 150°C junction temperature. The PSMN057-200B,118, PHB33NQ20T,118, and STB30NF20L all support the full 175°C range.

Q4: What does gate charge (Qg) mean, and why does it vary among substitutes?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds. The PHB33NQ20T,118 has the lowest gate charge (32.2 nC), making it optimal for high-frequency switching applications. The PSMN057-200B,118 has higher gate charge (96 nC), which may increase switching losses but does not affect DC performance.

Q5: Are all substitute parts available in the same packaging options?

A: All substitute parts are available in D2PAK (TO-263-3) surface mount configuration, matching the original IRFS23N20DPBF package. Packaging options vary by supplier: FQB34N20LTM is supplied in Tape & Reel (TR), STB30NF20 and STB30NF20L in Cut Tape (CT) & Digi-Reel®, and PHB33NQ20T,118 and PSMN057-200B,118 in Tape & Reel (TR).

Q6: Which substitute is best for automotive applications?

A: The STB30NF20L is specifically qualified for automotive use under AEC-Q101 standard. This device is recommended for automotive-grade designs requiring formal qualification documentation. Other substitutes are suitable for industrial and consumer applications but lack automotive qualification.

Q7: How do I select between substitutes if my application is thermally constrained?

A: For thermally demanding applications, prioritize devices with higher power dissipation ratings. The PSMN057-200B,118 (250W) and PHB33NQ20T,118 (230W) offer superior thermal performance. If your circuit operates at high switching frequencies, the PHB33NQ20T,118 with its lower gate charge (32.2 nC) will generate less switching loss heat.

Q8: What is the significance of on-resistance (Rds On) differences?

A: On-resistance determines conduction losses when the MOSFET is in the on state. Lower on-resistance reduces power dissipation and heat generation. The PSMN057-200B,118 (57 mOhm) provides the lowest on-resistance, resulting in minimal conduction losses. The original IRFS23N20DPBF (100 mOhm) has higher on-resistance, so all substitutes offer improved efficiency.

Q9: Can I use a substitute with higher current rating if my application only requires 24A?

A: Yes. Substitutes with higher current ratings (31A, 32.7A, 39A) are fully compatible with applications requiring 24A or less. Higher current rating provides design margin and typically includes improved on-resistance and thermal performance. There is no disadvantage to using a higher-rated device in a lower-current application.

Q10: What compliance certifications do all substitutes share with the original?

A: All substitute parts are ROHS3 compliant and REACH unaffected, matching the original IRFS23N20DPBF. All devices carry ECCN EAR99 and HTSUS 8541.29.0095 classifications. Moisture sensitivity level is 1 (Unlimited) for all parts, indicating no special moisture handling requirements.

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