IRFS23N20D Equivalent & Substitute Parts

Part Overview

The IRFS23N20D is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 24A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of functionally equivalent active alternatives for new designs and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and mechanical packaging requirements while offering active product status and modern compliance certifications.

Key Parameters

Parameter	IRFS23N20D	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	24	A
On-State Resistance (Rds On) @ 10V	100	mOhm
Gate Threshold Voltage (Vgs(th))	5.5	V @ 250µA
Gate Charge (Qg) @ 10V	86	nC
Input Capacitance (Ciss) @ 25V	1960	pF
Maximum Gate Voltage (Vgs)	±30	V
Power Dissipation (Tc)	170	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the IRFS23N20D are selected based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Package Type: Must be D2PAK (TO-263-3) surface mount
Continuous Drain Current (Id): Must meet or exceed 24A at 25°C
On-State Resistance (Rds On): Lower or equivalent values at 10V gate drive
Operating Temperature Range: Must support -55°C to 175°C or equivalent industrial range
Gate Voltage Compatibility: Vgs(max) must accommodate ±30V or greater

Secondary Compatibility Factors:

Gate Charge (Qg) and Input Capacitance (Ciss) for switching performance
Power Dissipation capability at case temperature (Tc)
RoHS3 compliance and active product status for supply chain continuity

All identified substitutes maintain the same voltage class (200V) and package footprint, with drain current ratings equal to or greater than the original 24A specification. Substitutes are grouped by their ability to directly replace the IRFS23N20D in existing circuit designs without layout modifications.

Parameter Comparison

Parameter	IRFS23N20D	FQB34N20LTM	PHB33NQ20T,118	PSMN057-200B,118	STB30NF20	STB30NF20L	Unit
Manufacturer	Infineon	onsemi	Nexperia	Nexperia	STMicroelectronics	STMicroelectronics	—
Vdss	200	200	200	200	200	200	V
Id @ 25°C (Tc)	24	31	32.7	39	30	30	A
Rds On @ 10V	100	75	77	57	75	75	mOhm
Vgs(th)	5.5	2	4	4	4	3	V @ 250µA or 1mA
Qg @ 10V	86	72	32.2	96	38	65	nC
Ciss @ 25V	1960	3900	1870	3750	1597	1990	pF
Vgs(max)	±30	±20	±20	±20	±20	±20	V
Power Dissipation (Tc)	170	180	230	250	125	150	W
Operating Temp Range	-55 to 175	-55 to 150	-55 to 175	-55 to 175	-55 to 150	-55 to 175	°C
Package	D2PAK	TO-263 (D2PAK)	D2PAK	D2PAK	D2PAK	D2PAK	—
Product Status	Obsolete	Active	Active	Active	Active	Active	—
RoHS Compliance	Non-compliant	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	—

Engineering Selection Recommendations

Primary Substitutes (Direct Replacement Priority):

PHB33NQ20T,118 (Nexperia) and STB30NF20L (STMicroelectronics) are the preferred substitutes for the IRFS23N20D. Both devices maintain the 200V voltage rating, D2PAK package, and 30A+ drain current capability. PHB33NQ20T,118 offers superior on-state resistance (77 mOhm) and lower gate charge (32.2 nC), resulting in improved switching efficiency. STB30NF20L provides automotive-grade qualification (AEC-Q101) and extended operating temperature support to 175°C, matching the original device's thermal range. Both are ROHS3 compliant with active product status and unlimited moisture sensitivity rating (MSL 1).

Secondary Substitutes (Performance Enhancement):

PSMN057-200B,118 (Nexperia) delivers the lowest on-state resistance (57 mOhm) among all substitutes, enabling reduced conduction losses in high-current applications. This device maintains 200V rating, D2PAK packaging, and 39A continuous drain current with 250W power dissipation capability. ROHS3 compliance and -55°C to 175°C operating range ensure compatibility with the original specification envelope.

STB30NF20 (STMicroelectronics) provides a cost-effective alternative with 30A rating and 75 mOhm on-state resistance. While operating temperature is limited to 150°C, this device maintains full D2PAK compatibility and ROHS3 compliance for applications not requiring extended high-temperature operation.

Alternative Voltage Class:

IXTA36N30P (IXYS) operates at 300V drain-to-source voltage with 36A continuous current and 110 mOhm on-state resistance. This device is suitable only for applications where higher voltage margin is required; it is not a direct replacement for 200V-rated circuits. MSL rating of 3 (168 hours) requires controlled moisture exposure during handling.

Compliance and Supply Chain Considerations:

All recommended substitutes carry ROHS3 compliance and active product status, ensuring long-term availability and regulatory alignment. The IRFS23N20D's obsolete status and RoHS non-compliance make transition to active alternatives necessary for new production. STB30NF20L's automotive qualification (AEC-Q101) is recommended for automotive and industrial applications requiring enhanced reliability documentation.

Frequently Asked Questions (FAQ)

Q: Can FQB34N20LTM replace IRFS23N20D in all applications?

A: FQB34N20LTM is electrically compatible with matching 200V rating, D2PAK package, and 31A drain current exceeding the original 24A specification. However, the maximum operating temperature is limited to 150°C versus the IRFS23N20D's 175°C. Applications operating above 150°C require PHB33NQ20T,118 or PSMN057-200B,118 instead.

Q: What is the significance of on-state resistance (Rds On) differences?

A: Lower Rds On values reduce conduction losses and heat generation. PSMN057-200B,118 at 57 mOhm dissipates approximately 43% less power than IRFS23N20D at 100 mOhm under identical current conditions. This improvement reduces thermal management requirements and improves overall circuit efficiency.

Q: Are all substitutes pin-compatible with the original IRFS23N20D?

A: Yes. All recommended substitutes use D2PAK (TO-263-3) packaging with identical pin configuration: Gate, Drain, and Source connections. No PCB layout modifications are required for direct substitution.

Q: Why does IXTA36N30P have a higher MSL rating?

A: IXTA36N30P carries MSL 3 (168 hours) versus MSL 1 (unlimited) for other substitutes. This indicates greater moisture sensitivity and requires controlled storage conditions and shorter time-to-reflow windows during assembly. For standard manufacturing environments, MSL 1 devices are preferred.

Q: Which substitute offers the best gate charge performance?

A: PHB33NQ20T,118 provides the lowest gate charge at 32.2 nC, approximately 63% lower than the IRFS23N20D's 86 nC. Lower gate charge reduces driver power consumption and enables faster switching transitions in high-frequency applications.

Q: Is automotive qualification required for all applications?

A: Automotive qualification (AEC-Q101) is required only for automotive and safety-critical applications. STB30NF20L carries this qualification; other substitutes do not. For industrial and consumer applications, AEC-Q101 qualification is not necessary.

Q: What is the impact of different Vgs(th) threshold voltages?

A: IRFS23N20D requires 5.5V gate threshold versus 2-4V for substitutes. Lower threshold voltages enable operation with lower gate drive voltages, reducing driver circuit complexity. All substitutes are compatible with standard 10V gate drive signals used in the original design.

Q: Can substitutes be mixed in the same production batch?

A: Substitutes should not be mixed within the same circuit or batch without design verification. Different Rds On values, gate charges, and thermal characteristics may affect circuit performance. Select a single substitute model for consistent production behavior.

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