IRFS23N15DTRLP N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFS23N15DTRLP is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 23A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent components for ongoing design requirements and production continuity. The HEXFET® series designation indicates advanced gate oxide technology for enhanced performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	90 mOhm @ 14A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	5.5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	56	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	1200	pF @ 25V
Power Dissipation (Max)	3.8 (Ta), 136 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the IRFS23N15DTRLP is determined by strict equivalence in the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 150V minimum required
Package Type: D2PAK surface mount configuration
FET Technology: N-Channel MOSFET
Operating Temperature Range: -55°C to 175°C (TJ)
Compliance Standards: RoHS3, REACH Unaffected, EAR99 classification

Allowable Variation Parameters:

Continuous Drain Current (Id): Equal to or greater than 23A
On-State Resistance (Rds On): Equal to or lower than 90 mOhm (lower resistance indicates improved performance)
Gate Charge (Qg): Equal to or lower than 56 nC (lower gate charge indicates faster switching)
Input Capacitance (Ciss): Equal to or lower than 1200 pF (lower capacitance indicates reduced switching losses)

The IRFS4615TRLPBF meets all critical matching parameters and demonstrates improved electrical characteristics in the allowable variation parameters, qualifying it as a direct substitute.

Parameter Comparison

Parameter	IRFS23N15DTRLP	IRFS4615TRLPBF	Compatibility
Manufacturer	Infineon Technologies	Infineon Technologies	Match
FET Type	N-Channel	N-Channel	Match
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Match
Drain to Source Voltage (Vdss)	150 V	150 V	Match
Continuous Drain Current (Id) @ 25°C	23 A (Tc)	33 A (Tc)	Substitute Exceeds
Drive Voltage (Max Rds On)	10 V	10 V	Match
Rds On (Max) @ Id, Vgs	90 mOhm @ 14A, 10V	42 mOhm @ 21A, 10V	Substitute Improved
Vgs(th) (Max) @ Id	5.5 V @ 250µA	5 V @ 100µA	Substitute Improved
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 10V	40 nC @ 10V	Substitute Improved
Vgs (Max)	±30 V	±20 V	Substitute Reduced
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25V	1750 pF @ 50V	Substitute Higher
Power Dissipation (Max)	3.8 W (Ta), 136 W (Tc)	144 W (Tc)	Substitute Improved
Operating Temperature	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)	Match
Mounting Type	Surface Mount	Surface Mount	Match
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	Match
Series	HEXFET®	HEXFET®	Match
Product Status	Obsolete	Active	Substitute Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Match
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	Match
REACH Status	REACH Unaffected	REACH Unaffected	Match
ECCN	EAR99	EAR99	Match
HTSUS	8541.29.0095	8541.29.0095	Match

Engineering Selection Recommendations

The IRFS4615TRLPBF is a qualified substitute for the obsolete IRFS23N15DTRLP based on the following engineering criteria:

Compliance and Regulatory Alignment: Both components maintain identical RoHS3 compliance, REACH Unaffected status, and EAR99 export classification, ensuring regulatory continuity in design transitions.

Electrical Parameter Compatibility: The substitute component maintains the critical 150V Vdss rating and D2PAK package configuration. The increased continuous drain current rating (33A versus 23A) provides design margin without introducing incompatibility. The reduced on-state resistance (42 mOhm versus 90 mOhm) and lower gate charge (40 nC versus 56 nC) indicate improved switching efficiency and reduced thermal dissipation requirements.

Product Status Advantage: The IRFS4615TRLPBF carries Active product status, ensuring long-term availability and supply chain stability compared to the Obsolete status of the original component.

Thermal and Packaging Considerations: Both components operate across the identical temperature range (-55°C to 175°C TJ) and utilize the same D2PAK surface mount package, enabling direct PCB layout compatibility without redesign.

Inventory Availability: The substitute component maintains higher inventory levels (1588 Pcs versus 1140 Pcs), supporting production continuity and procurement reliability.

Frequently Asked Questions (FAQ)

Q: Can the IRFS4615TRLPBF be used as a direct replacement for the IRFS23N15DTRLP in existing designs?

A: Yes. Both components share identical Vdss (150V), package type (D2PAK), operating temperature range (-55°C to 175°C TJ), and compliance certifications (RoHS3, REACH Unaffected, EAR99). The substitute component requires no PCB layout modifications and no circuit redesign.

Q: What are the key electrical differences between these components?

A: The IRFS4615TRLPBF provides higher continuous drain current (33A versus 23A), lower on-state resistance (42 mOhm versus 90 mOhm at higher current), and lower gate charge (40 nC versus 56 nC). These differences represent performance improvements that enhance efficiency and reduce switching losses.

Q: Does the higher input capacitance of the IRFS4615TRLPBF affect circuit performance?

A: The input capacitance difference (1750 pF @ 50V versus 1200 pF @ 25V) reflects measurement conditions at different voltage points. This parameter should be evaluated within the specific gate drive circuit design. The lower gate charge specification of the substitute component indicates faster overall switching response.

Q: Are there any gate voltage limitations when substituting these components?

A: The IRFS4615TRLPBF has a maximum gate voltage rating of ±20V compared to ±30V for the IRFS23N15DTRLP. Verify that existing gate drive circuits operate within the ±20V maximum specification of the substitute component.

Q: What is the significance of the Active product status for the IRFS4615TRLPBF?

A: Active product status indicates that Infineon Technologies continues manufacturing and supporting this component. This ensures long-term availability, consistent supply chain access, and ongoing technical support, contrasting with the Obsolete status of the original component.

Q: Are both components suitable for the same thermal management approach?

A: Both components operate across the identical temperature range and utilize the same D2PAK package with identical thermal interface characteristics. The improved power dissipation capability of the substitute component (144W Tc versus 136W Tc) may reduce thermal management requirements in some applications.

Q: What packaging formats are available for the IRFS4615TRLPBF?

A: The IRFS4615TRLPBF is supplied in Cut Tape (CT) and Digi-Reel® packaging formats, matching the packaging options of the original component.

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