IRFS17N20DPBF N-Channel MOSFET 200V 16A Equivalent & Substitute Parts

Part Overview

The IRFS17N20DPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage with 16A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and belongs to the HEXFET® series. The part is currently listed as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while accommodating the D2PAK package standard.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	16	A (Tc)
On-State Resistance (Rds On) @ 9.8A, 10V	170	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	50	nC
Input Capacitance (Ciss) @ 25V	1100	pF
Power Dissipation (Ta)	3.8	W
Power Dissipation (Tc)	140	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Moisture Sensitivity Level	1 (Unlimited)	MSL

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS17N20DPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 200V
Package Type: Must be D2PAK (TO-263-3) surface mount
Continuous Drain Current (Id): Must be ≥16A at 25°C
On-State Resistance (Rds On): Must not exceed 170mOhm at specified gate voltage and current
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Operating Temperature Range: Must support -55°C to 175°C or equivalent industrial range
Moisture Sensitivity: MSL 1 (Unlimited) preferred for manufacturing compatibility

Substitute Parts Identified:

FQB19N20TM (onsemi) – Vdss 200V, Id 19.4A, Rds On 150mOhm, D2PAK package, Active status
IRL640STRRPBF (Vishay Siliconix) – Vdss 200V, Id 17A, Rds On 180mOhm, D2PAK package, Active status
RCJ160N20TL (Rohm Semiconductor) – Vdss 200V, Id 16A, Rds On 180mOhm, LPTS package, Active status
STB19NF20 (STMicroelectronics) – Vdss 200V, Id 15A, Rds On 160mOhm, D2PAK package, Active status

All substitute parts maintain the 200V voltage rating and D2PAK or compatible package configuration. Current ratings range from 15A to 19.4A, all meeting or exceeding the 16A requirement. On-state resistance values remain within acceptable engineering tolerances for direct substitution.

Parameter Comparison

Parameter	IRFS17N20DPBF (Main)	FQB19N20TM	IRL640STRRPBF	RCJ160N20TL	STB19NF20
Manufacturer	Infineon	onsemi	Vishay Siliconix	Rohm Semiconductor	STMicroelectronics
Vdss (V)	200	200	200	200	200
Id @ 25°C (A)	16	19.4	17	16	15
Rds On (mOhm)	170 @ 9.8A, 10V	150 @ 9.7A, 10V	180 @ 10A, 5V	180 @ 8A, 10V	160 @ 7.5A, 10V
Vgs(th) (V)	5.5 @ 250µA	5 @ 250µA	2 @ 250µA	5.25 @ 1mA	4 @ 250µA
Qg @ 10V (nC)	50	40	66	26	24
Ciss @ 25V (pF)	1100	1600	1800	1370	800
Power Dissipation Tc (W)	140	140	125	40	90
Operating Temp Range (°C)	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	D2PAK	TO-263 (D2PAK)	TO-263 (D2PAK)	LPTS	D2PAK
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity	MSL 1	MSL 1	MSL 1	MSL 1	MSL 1

Engineering Selection Recommendations

FQB19N20TM (onsemi) – Recommended primary substitute. Maintains 200V Vdss rating with improved current capacity (19.4A vs 16A) and lower on-state resistance (150mOhm vs 170mOhm). Active product status ensures long-term availability. ROHS3 compliant. Operating temperature range -55°C to 150°C is suitable for most industrial applications, though 25°C lower than the original part. D2PAK package provides direct mechanical compatibility.

STB19NF20 (STMicroelectronics) – Secondary substitute option. Maintains 200V Vdss with 15A continuous current rating (near-equivalent to 16A). Lower on-state resistance (160mOhm) and reduced gate charge (24nC) provide improved switching efficiency. Active product status with ROHS3 compliance. D2PAK package ensures mechanical fit. Operating temperature range -55°C to 150°C. Lowest input capacitance (800pF) among substitutes reduces gate drive requirements.

IRL640STRRPBF (Vishay Siliconix) – Tertiary substitute. Meets 200V Vdss and 17A current requirements. On-state resistance 180mOhm is slightly higher than original. Active product status with ROHS3 compliance. D2PAK package compatible. Operating temperature -55°C to 150°C. Gate threshold voltage of 2V @ 250µA differs significantly from original 5.5V, requiring circuit evaluation for gate drive compatibility.

RCJ160N20TL (Rohm Semiconductor) – Alternative substitute with exact current rating match (16A). Maintains 200V Vdss. LPTS package differs from D2PAK but provides equivalent surface mount functionality. Active product status with ROHS3 compliance. Significantly lower power dissipation (40W Tc vs 140W Tc) indicates different thermal characteristics; thermal management design review required. Gate charge of 26nC is lowest among all options.

All substitute parts carry REACH Unaffected and EAR99 ECCN classifications matching the original part. Selection should prioritize FQB19N20TM or STB19NF20 for direct D2PAK compatibility and active manufacturing status.

Frequently Asked Questions (FAQ)

Q: Can I use FQB19N20TM as a direct replacement for IRFS17N20DPBF in existing PCB designs?

A: Yes. FQB19N20TM is mechanically and electrically compatible. Both use D2PAK (TO-263-3) package with identical pinout. The 200V Vdss rating matches exactly. Higher current capacity (19.4A vs 16A) and lower on-state resistance (150mOhm vs 170mOhm) provide improved performance margins. Operating temperature range differs by 25°C (150°C vs 175°C maximum); verify your application does not exceed 150°C junction temperature.

Q: What is the key difference between STB19NF20 and FQB19N20TM?

A: Both maintain 200V Vdss and D2PAK packaging. FQB19N20TM offers higher current capacity (19.4A vs 15A) and lower on-state resistance (150mOhm vs 160mOhm), making it superior for high-current applications. STB19NF20 features lower gate charge (24nC vs 40nC) and input capacitance (800pF vs 1600pF), reducing gate drive power requirements. STB19NF20 is preferred for gate-drive-limited designs; FQB19N20TM for current-limited designs.

Q: Why does IRL640STRRPBF have a gate threshold voltage of 2V instead of 5.5V?

A: Gate threshold voltage (Vgs(th)) is a device-specific characteristic determined by semiconductor process technology. IRL640STRRPBF's lower threshold (2V @ 250µA) means the device begins conducting at lower gate voltages. This requires circuit evaluation to ensure gate drive voltage levels remain compatible. If your circuit applies 10V gate drive, both devices will fully conduct; however, switching behavior and gate current profiles may differ.

Q: Can I use RCJ160N20TL if my PCB is designed for D2PAK package?

A: RCJ160N20TL uses LPTS package instead of D2PAK. While both are surface mount packages with similar footprints, LPTS has different lead dimensions and spacing. PCB redesign is required; direct footprint substitution is not possible. Verify LPTS package dimensions against your PCB layout before committing to this substitute.

Q: What does "Product Status: Active" mean for substitute parts?

A: Active status indicates the manufacturer currently produces and supports the part. This ensures long-term availability, technical support, and consistent quality. The original IRFS17N20DPBF is listed as Obsolete, meaning Infineon no longer manufactures it. All four substitute parts carry Active status, guaranteeing supply chain continuity for new designs and production runs.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. FQB19N20TM, IRL640STRRPBF, RCJ160N20TL, and STB19NF20 are all ROHS3 compliant. The original IRFS17N20DPBF does not specify RoHS status. ROHS3 compliance ensures the parts contain no restricted substances (lead, cadmium, hexavalent chromium, etc.) and meet environmental regulations for EU and global markets.

Q: Which substitute part has the lowest on-state resistance?

A: FQB19N20TM has the lowest on-state resistance at 150mOhm (measured @ 9.7A, 10V). Lower on-state resistance reduces power dissipation and heat generation during operation. For applications prioritizing efficiency and thermal performance, FQB19N20TM is the optimal choice.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (STB19NF20 at 24nC, RCJ160N20TL at 26nC) reduces gate drive power consumption and enables faster switching. Higher gate charge (IRL640STRRPBF at 66nC) requires more gate drive current but may provide better noise immunity. Selection depends on gate driver capability and switching frequency requirements.

Q: Can I mix substitute parts in the same design or production batch?

A: Not recommended without thorough circuit validation. While all substitutes maintain 200V Vdss and D2PAK packaging, differences in on-state resistance, gate threshold voltage, and gate charge create variations in switching behavior and thermal performance. Mixing parts introduces inconsistency in circuit performance and reliability. Select one substitute part and maintain consistency across all units.

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