IRFS17N20D N-Channel MOSFET 200V 16A Equivalent & Substitute Parts

Part Overview

The IRFS17N20D is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 200V drain-to-source voltage and 16A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent substitute parts necessary for new designs and production continuity. The HEXFET® series component operates across a wide temperature range from -55°C to 175°C junction temperature and is RoHS non-compliant, which may impact procurement for regulated applications.

Substiute Parts

IRFS17N20D
Infineon TechnologiesIn Stock: 25568IRFS17N20D Datasheet
IRFS17N20D
Current Part
RCJ160N20TL
Rohm SemiconductorIn Stock: 2194RCJ160N20TL Datasheet
RCJ160N20TL
MFR Recommended
STB19NF20
STMicroelectronicsIn Stock: 18447STB19NF20 Datasheet
STB19NF20
MFR Recommended

Key Parameters

Parameter Value Specification
Manufacturer Part Number IRFS17N20D Infineon Technologies
FET Type N-Channel MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 200 V Maximum rated voltage
Continuous Drain Current (Id) @ 25°C 16A (Tc) At case temperature
On-State Resistance (Rds On) 170 mOhm @ 9.8A, 10V Maximum at specified conditions
Gate Threshold Voltage (Vgs(th)) 5.5V @ 250µA Maximum
Gate Charge (Qg) 50 nC @ 10V Maximum
Input Capacitance (Ciss) 1100 pF @ 25V Maximum
Power Dissipation 3.8W (Ta), 140W (Tc) Maximum
Operating Temperature Range -55°C to 175°C (TJ) Junction temperature
Package Type D2PAK (TO-263-3) Surface mount, 2 leads + tab
Product Status Obsolete No longer in active production
RoHS Status Non-compliant Contains restricted substances

Substitute Part Grouping Explanation

Substitution of the IRFS17N20D is determined by strict electrical and mechanical compatibility criteria. The following parameters must be matched or exceeded in substitute components:

Critical Matching Parameters:

  • Drain-to-Source Voltage (Vdss): 200V minimum
  • Continuous Drain Current (Id): 16A minimum at case temperature
  • Package Type: D2PAK (TO-263-3) surface mount configuration
  • FET Type: N-Channel MOSFET technology
  • Gate Drive Voltage: 10V maximum Rds On specification

Secondary Compatibility Parameters:

  • Gate Threshold Voltage (Vgs(th)): Within ±30V gate voltage rating
  • Input Capacitance (Ciss): Acceptable variation within circuit design margins
  • On-State Resistance (Rds On): Lower values acceptable; higher values require thermal analysis
  • Operating Temperature: Minimum -55°C to 150°C junction temperature range
  • Power Dissipation: Thermal performance must support application requirements

The two substitute parts identified meet these criteria with variations in thermal performance, gate charge characteristics, and compliance certifications.

Parameter Comparison

Parameter IRFS17N20D (Infineon) RCJ160N20TL (Rohm) STB19NF20 (STMicroelectronics)
Drain-to-Source Voltage (Vdss) 200V 200V 200V
Continuous Drain Current (Id) @ 25°C 16A (Tc) 16A (Tc) 15A (Tc)
On-State Resistance (Rds On) 170 mOhm @ 9.8A, 10V 180 mOhm @ 8A, 10V 160 mOhm @ 7.5A, 10V
Gate Threshold Voltage (Vgs(th)) 5.5V @ 250µA 5.25V @ 1mA 4V @ 250µA
Gate Charge (Qg) 50 nC @ 10V 26 nC @ 10V 24 nC @ 10V
Input Capacitance (Ciss) 1100 pF @ 25V 1370 pF @ 25V 800 pF @ 25V
Power Dissipation (Tc) 140W 40W 90W
Operating Temperature Range -55°C to 175°C (TJ) Up to 150°C (TJ) -55°C to 150°C (TJ)
Package Type D2PAK (TO-263-3) LPTS (TO-263-3) D2PAK (TO-263-3)
Product Status Obsolete Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

RCJ160N20TL (Rohm Semiconductor) - Primary Substitute

The RCJ160N20TL provides direct electrical equivalence with 200V Vdss and 16A continuous drain current rating. This part is in active production status with ROHS3 compliance, addressing the regulatory limitations of the obsolete IRFS17N20D. The lower gate charge (26 nC versus 50 nC) and reduced power dissipation at ambient temperature (1.56W Ta versus 3.8W Ta) offer improved switching efficiency. The LPTS package maintains D2PAK (TO-263-3) mechanical compatibility. However, the maximum junction temperature rating of 150°C is 25°C lower than the original part, requiring thermal verification in high-temperature applications exceeding 150°C.

STB19NF20 (STMicroelectronics) - Secondary Substitute

The STB19NF20 operates at 200V Vdss with 15A continuous drain current, representing a 1A reduction from the original 16A specification. This part is active production with ROHS3 compliance and maintains the full -55°C to 150°C operating temperature range. The superior on-state resistance (160 mOhm versus 170 mOhm) and lower input capacitance (800 pF versus 1100 pF) provide thermal and switching performance advantages. The reduced gate charge (24 nC) supports faster switching applications. Selection of this part requires confirmation that the 15A current rating is sufficient for the application, as it represents a 6.25% reduction in continuous current capacity.

Both substitute parts are surface mount compatible with the original D2PAK package footprint and support the same ±30V gate voltage range for drive circuitry.

Frequently Asked Questions (FAQ)

Q: Can the RCJ160N20TL directly replace the IRFS17N20D in all applications?

A: The RCJ160N20TL provides electrical equivalence for voltage and current ratings with improved efficiency characteristics. The primary design consideration is the maximum junction temperature of 150°C versus 175°C in the original part. Applications operating above 150°C junction temperature require thermal analysis to confirm the substitute part remains within safe operating limits.

Q: Why does the STB19NF20 have a lower continuous drain current rating (15A versus 16A)?

A: The STB19NF20 is rated for 15A continuous drain current at case temperature. This 1A reduction may be acceptable in applications with design margin, but must be verified against actual circuit current requirements. The superior on-state resistance (160 mOhm) partially compensates through reduced power dissipation.

Q: Are the package dimensions identical between D2PAK and LPTS variants?

A: Both the RCJ160N20TL (LPTS) and STB19NF20 (D2PAK) use the TO-263-3 package standard with identical mechanical footprints and lead spacing. PCB layout and thermal management designs are directly compatible without modification.

Q: What is the significance of the gate charge difference between these parts?

A: Gate charge (Qg) affects switching speed and drive circuit power consumption. The RCJ160N20TL (26 nC) and STB19NF20 (24 nC) require less gate charge than the original IRFS17N20D (50 nC), resulting in faster switching transitions and reduced driver power dissipation. Existing gate drive circuits designed for 50 nC will operate reliably with these lower values.

Q: How does the input capacitance variation impact circuit design?

A: Input capacitance (Ciss) affects gate drive circuit impedance and switching transient behavior. The RCJ160N20TL (1370 pF) is slightly higher than the original (1100 pF), while the STB19NF20 (800 pF) is significantly lower. For most applications, these variations are within acceptable design margins. High-frequency switching circuits should verify gate drive performance with the selected substitute part.

Q: What is the compliance advantage of the substitute parts?

A: Both RCJ160N20TL and STB19NF20 are ROHS3 compliant, whereas the IRFS17N20D is RoHS non-compliant. This compliance status is mandatory for new designs and production in regulated markets. The obsolete status of the original part makes compliance-certified substitutes necessary for continued product development and manufacturing.

Q: Can these parts be used interchangeably in the same circuit?

A: The RCJ160N20TL and STB19NF20 have different electrical characteristics (current rating, Rds On, Ciss, Qg) and should not be considered interchangeable without circuit analysis. Select one part based on specific application requirements for current capacity, thermal performance, and switching speed, then maintain that selection throughout production.

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