IRFS11N50ATRRP Equivalent & Substitute Parts

Part Overview

The IRFS11N50ATRRP is an N-Channel 500V 11A MOSFET manufactured by Vishay Siliconix in Surface Mount TO-263 (D2PAK) packaging. This device is designed for high-voltage switching applications requiring continuous drain current capability at elevated temperatures. The part is currently Active in product status with 833 pieces available in inventory.

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining compatible mechanical form factors and thermal characteristics. Alternative sources may be required due to inventory availability, supply chain considerations, or specific application requirements for RoHS compliance or enhanced thermal performance.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	11	A
Rds On (Max) @ 6.6A, 10V	520	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	52	nC
Power Dissipation (Max)	170	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	—
Package Type	TO-263 (D2PAK)	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFS11N50ATRRP is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a Drain to Source Voltage (Vdss) of 500V to ensure compatibility with the application's voltage stress requirements.

Current Capability: Continuous drain current (Id) at 25°C must be sufficient to handle the application load. Parts with equal or greater current ratings are acceptable substitutes.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate and drain conditions determines switching losses and thermal performance. Equivalent or lower Rds On values maintain or improve efficiency.

Gate Charge (Qg): Gate charge affects switching speed and driver circuit requirements. Lower gate charge values reduce switching losses and allow faster switching transitions.

Power Dissipation: Maximum power dissipation capability must support the thermal requirements of the application. Higher power ratings provide additional thermal margin.

Package Compatibility: All substitute parts utilize Surface Mount TO-263 family packaging (D2PAK, TO-263AB, TO-263AA, or LPTS variants), ensuring mechanical and thermal interface compatibility.

Operating Temperature: All parts support the -55°C to 150°C operating range required for the application.

Parameter Comparison

Parameter	IRFS11N50ATRRP	IRFS11N50ATRLP	IXFA12N50P	R5011FNJTL	STB11NK50ZT4
Manufacturer	Vishay Siliconix	Vishay Siliconix	IXYS	Rohm Semiconductor	STMicroelectronics
Vdss (V)	500	500	500	500	500
Id @ 25°C (A)	11	11	12	11	10
Rds On (Max) @ 10V (mOhm)	520 @ 6.6A	520 @ 6.6A	500 @ 6A	520 @ 5.5A	520 @ 4.5A
Vgs(th) (Max) (V)	4 @ 250µA	4 @ 250µA	5.5 @ 1mA	4 @ 1mA	4.5 @ 100µA
Gate Charge (Qg) @ 10V (nC)	52	52	29	30	68
Power Dissipation (Max) (W)	170	170	200	50	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263AB	TO-263AA (IXFA)	LPTS	D2PAK
RoHS Status	Non-compliant	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Inventory (Pcs)	833	1670	1139	2887	4361

Engineering Selection Recommendations

IRFS11N50ATRLP (Vishay Siliconix): This part is a direct parametric equivalent to the IRFS11N50ATRRP with identical electrical specifications. The primary difference is the package designation (TO-263AB versus TO-263). Both parts share the same base product number (IRFS11) and maintain equivalent performance characteristics. This substitute is suitable for applications where Vishay Siliconix sourcing is preferred and RoHS non-compliance is acceptable. Inventory availability is higher at 1670 pieces.

IXFA12N50P (IXYS): This part offers enhanced performance with 12A continuous drain current versus 11A, and increased power dissipation capability (200W versus 170W). The gate charge is significantly lower at 29nC, reducing switching losses and driver circuit stress. This part is ROHS3 compliant and carries the HiPerFET™ series designation. The on-state resistance is equivalent at 500mOhm. This substitute is recommended for applications requiring improved thermal performance or RoHS compliance.

R5011FNJTL (Rohm Semiconductor): This part maintains the 11A current rating and 500V voltage rating with equivalent on-state resistance. However, the maximum power dissipation is significantly reduced to 50W, limiting thermal capability. Gate charge is lower at 30nC. This part is ROHS3 compliant. This substitute is suitable only for applications with lower thermal requirements and where RoHS compliance is mandatory.

STB11NK50ZT4 (STMicroelectronics): This part provides 10A continuous drain current with 125W power dissipation. The on-state resistance is equivalent at 520mOhm. Gate charge is higher at 68nC. This part is ROHS3 compliant and carries the SuperMESH™ series designation. This substitute is suitable for applications where current requirements are 10A or less and RoHS compliance is required. Inventory availability is highest at 4361 pieces.

Frequently Asked Questions (FAQ)

Q: Can IRFS11N50ATRLP be used as a direct replacement for IRFS11N50ATRRP?

A: Yes. Both parts share identical electrical specifications including 500V Vdss, 11A continuous drain current, 520mOhm Rds On, and 170W power dissipation. The package designation differs (TO-263AB versus TO-263), but both are Surface Mount TO-263 family variants with compatible mechanical and thermal interfaces.

Q: What is the primary advantage of IXFA12N50P over the original part?

A: The IXFA12N50P provides higher continuous drain current (12A versus 11A) and increased power dissipation capability (200W versus 170W). Gate charge is significantly lower at 29nC, reducing switching losses. The part is ROHS3 compliant, whereas the original is non-compliant.

Q: Is R5011FNJTL suitable for high-power applications?

A: No. While R5011FNJTL maintains the 11A current rating and 500V voltage rating, its maximum power dissipation is limited to 50W compared to 170W for the original part. This part is suitable only for applications with lower thermal requirements.

Q: Why does STB11NK50ZT4 have higher gate charge than the original part?

A: STB11NK50ZT4 has a gate charge of 68nC versus 52nC for the original part. This results in slower switching transitions and higher switching losses. However, the part maintains equivalent on-state resistance and is suitable for applications where current requirements do not exceed 10A.

Q: Are all substitute parts compatible with the same PCB layout?

A: All substitute parts utilize Surface Mount TO-263 family packaging (D2PAK, TO-263AB, TO-263AA, or LPTS variants). While mechanical footprints are similar, verification of specific package dimensions against PCB design is required before implementation.

Q: Which substitute part offers the best RoHS compliance?

A: IXFA12N50P, R5011FNJTL, and STB11NK50ZT4 are all ROHS3 compliant. The original IRFS11N50ATRRP and IRFS11N50ATRLP are RoHS non-compliant.

Q: Can I use a substitute part with lower gate charge to improve switching speed?

A: Yes. IXFA12N50P (29nC) and R5011FNJTL (30nC) have lower gate charge than the original part (52nC). Lower gate charge enables faster switching transitions and reduces driver circuit stress, provided the driver circuit is capable of supplying the required gate current.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts support operation from -55°C to 150°C, matching the original part's temperature range.

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