IRFS11N50A Equivalent & Substitute Parts

Part Overview

The IRFS11N50A is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 500V drain-to-source voltage with 11A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for high-voltage switching applications. The IRFS11N50A is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRFS11N50A

Vishay SiliconixIn Stock: 2194IRFS11N50A Datasheet

Current PartRFQ

IRFS11N50APBF

Vishay SiliconixIn Stock: 1464IRFS11N50APBF Datasheet

Parametric EquivalentRFQ

IXTA12N50P

IXYSIn Stock: 898IXTA12N50P Datasheet

MFR RecommendedRFQ

R5011FNJTL

Rohm SemiconductorIn Stock: 2915R5011FNJTL Datasheet

MFR RecommendedRFQ

STB11NK50ZT4

STMicroelectronicsIn Stock: 4404STB11NK50ZT4 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFS11N50A is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

• Drain to Source Voltage (Vdss): 500V (exact match required)
• FET Type: N-Channel (exact match required)
• Technology: MOSFET (Metal Oxide) (exact match required)
• Mounting Type: Surface Mount (exact match required)
• Package Type: TO-263 (D2PAK) or compatible variant (exact match required)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id) @ 25°C: 11A or greater
• Gate Threshold Voltage (Vgs(th)): 4V or less
• Rds On (Max) @ 10V: 520 mOhm or less
• Operating Temperature Range: -55°C to 150°C or greater
• Gate Charge (Qg): 52 nC or less

Substitute parts must satisfy all primary criteria and maintain compatibility within secondary parameters to ensure functional equivalence in the target application.

Parameter Comparison

Engineering Selection Recommendations

IRFS11N50APBF (Vishay Siliconix)

The IRFS11N50APBF is a parametric equivalent to the IRFS11N50A with identical electrical specifications across all critical parameters. This part maintains the same 11A continuous drain current, 520 mOhm Rds On, and 52 nC gate charge. The primary distinction is product status: IRFS11N50APBF is active and ROHS3 compliant, whereas the original IRFS11N50A is obsolete and non-compliant. This substitute is the preferred choice for direct replacement in existing designs requiring regulatory compliance.

IXTA12N50P (IXYS)

The IXTA12N50P is a functional substitute with enhanced current rating (12A versus 11A) and improved power dissipation (200W versus 170W). Gate charge is reduced to 29 nC, enabling faster switching characteristics. Rds On is marginally lower at 500 mOhm. The gate threshold voltage is elevated to 5.5V, which may require circuit evaluation in gate drive applications. This part is ROHS3 compliant and active in production.

R5011FNJTL (Rohm Semiconductor)

The R5011FNJTL maintains the 11A current rating and 520 mOhm Rds On specification. Gate charge is reduced to 30 nC. Power dissipation is significantly lower at 50W, indicating this device is optimized for lower thermal applications. The operating temperature range extends only to 150°C without specified lower limit. This part is ROHS3 compliant and active in production.

STB11NK50ZT4 (STMicroelectronics)

The STB11NK50ZT4 is a functional substitute with a reduced continuous drain current rating of 10A (versus 11A). Rds On remains at 520 mOhm. Gate charge is elevated to 68 nC, resulting in slower switching compared to the original part. Power dissipation is reduced to 125W. This part is ROHS3 compliant, active in production, and features SuperMESH™ technology.

Frequently Asked Questions (FAQ)

Q: Can IRFS11N50APBF be used as a direct replacement for IRFS11N50A?

A: Yes. IRFS11N50APBF is a parametric equivalent with identical electrical specifications. The primary difference is product status and compliance: IRFS11N50APBF is active and ROHS3 compliant, while IRFS11N50A is obsolete and non-compliant. Pin configuration and package dimensions are identical.

Q: What is the key difference between IXTA12N50P and IRFS11N50A?

A: IXTA12N50P has a higher continuous drain current rating (12A versus 11A) and lower gate charge (29 nC versus 52 nC), enabling faster switching. The gate threshold voltage is higher at 5.5V. These differences require circuit evaluation, particularly in gate drive circuits with fixed voltage supplies.

Q: Is R5011FNJTL suitable for high-power applications?

A: R5011FNJTL has a maximum power dissipation of 50W, significantly lower than IRFS11N50A (170W). This part is suitable only for applications with reduced thermal requirements. For high-power switching applications, IRFS11N50APBF or IXTA12N50P are more appropriate.

Q: Can STB11NK50ZT4 replace IRFS11N50A in all applications?

A: STB11NK50ZT4 has a reduced continuous drain current rating of 10A versus 11A. Applications requiring the full 11A rating must use alternative substitutes. The elevated gate charge (68 nC) may also affect switching speed in time-critical circuits.

Q: Are all substitute parts available in the same package?

A: All substitute parts use TO-263 (D2PAK) or compatible variants (TO-263AA, LPTS, D2PAK). These packages are mechanically and electrically compatible for PCB mounting. Pin configuration remains consistent across all listed substitutes.

Q: Which substitute part offers the best compliance status?

A: All active substitute parts (IRFS11N50APBF, IXTA12N50P, R5011FNJTL, and STB11NK50ZT4) are ROHS3 compliant. The original IRFS11N50A is non-compliant. For new designs or regulatory requirements, any of the active substitutes satisfy compliance criteria.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge affects switching speed and gate drive requirements. Lower gate charge (IXTA12N50P at 29 nC, R5011FNJTL at 30 nC) enables faster switching. Higher gate charge (STB11NK50ZT4 at 68 nC) requires longer switching times. Gate drive circuits must supply sufficient current to charge the gate within the required time window.