IRFR812PBF N-Channel MOSFET 500V 3.6A Equivalent & Substitute Parts

Part Overview

The IRFR812PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 500V drain-to-source voltage with 3.6A continuous drain current at 25°C. This device is packaged in TO-252-3 DPAK (2 Leads + Tab) surface mount configuration and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making equivalent substitute components necessary for ongoing design requirements and production continuity. The IRFR812PBF operates across a temperature range of -55°C to 150°C (TJ) with maximum power dissipation of 78W at case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	3.6	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	2.2	Ohm @ 2.2A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	810	pF @ 25V
Power Dissipation (Max)	78	W (Tc)
Operating Temperature Range (TJ)	-55 to 150	°C
Mounting Type	Surface Mount	-
Package / Case	TO-252-3, DPAK	-
RoHS Status	ROHS3 Compliant	-
Moisture Sensitivity Level (MSL)	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the IRFR812PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 500V
Continuous Drain Current (Id): Must equal or exceed 3.6A at rated temperature
Drive Voltage: Must support 10V gate drive
On-State Resistance (Rds On): Must be compatible with application requirements
Package Type: Must be TO-252-3 DPAK surface mount configuration
Gate Charge (Qg): Lower values indicate faster switching characteristics
Operating Temperature Range: Must support -55°C to 150°C (TJ) minimum
Compliance: RoHS3 compliance required

Substitution Logic: Parts are considered equivalent when they maintain electrical performance within the specified operating envelope while maintaining identical or compatible package footprints. The substitute parts listed below satisfy these criteria with variations in specific parameters that do not compromise circuit functionality.

Parameter Comparison

Parameter	IRFR812PBF (Infineon)	RJK4532DPD-00#J2 (Renesas)	TK4P50D(T6RSS-Q) (Toshiba)	TK4P55DA(T6RSS-Q) (Toshiba)
Manufacturer	Infineon Technologies	Renesas Electronics Corporation	Toshiba Semiconductor and Storage	Toshiba Semiconductor and Storage
Drain-to-Source Voltage (Vdss)	500V	450V	500V	550V
Continuous Drain Current (Id) @ 25°C	3.6A (Tc)	4A (Ta)	4A (Ta)	3.5A (Ta)
Drive Voltage (Max Rds On)	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	2.2Ω @ 2.2A, 10V	2.3Ω @ 2A, 10V	2Ω @ 2A, 10V	2.45Ω @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V	9nC @ 10V	9nC @ 10V	9nC @ 10V
Maximum Gate Voltage (Vgs)	±20V	±30V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 25V	280pF @ 25V	380pF @ 25V	380pF @ 25V
Power Dissipation (Max)	78W (Tc)	40.3W (Tc)	80W (Tc)	80W (Tc)
Operating Temperature Range (TJ)	-55 to 150°C	Up to 150°C	Up to 150°C	Up to 150°C
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-252-3, DPAK	MP-3A	TO-252-3, DPAK	TO-252-3, DPAK
Product Status	Discontinued at DiGi Electronics	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	RoHS Compliant	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

TK4P50D(T6RSS-Q) - Toshiba Semiconductor and Storage

This substitute provides direct electrical and mechanical compatibility with the IRFR812PBF. Both devices feature 500V Vdss rating, matching drain-to-source voltage specifications. The TK4P50D delivers 4A continuous drain current, exceeding the 3.6A requirement of the original part. On-state resistance of 2Ω at 2A, 10V is superior to the IRFR812PBF specification of 2.2Ω. Gate charge is reduced to 9nC, indicating faster switching performance. The device is packaged in TO-252-3 DPAK, maintaining identical footprint compatibility. Product status is Active with RoHS compliance certification. Operating temperature range supports the full -55°C to 150°C requirement. Power dissipation rating of 80W exceeds the original 78W specification.

TK4P55DA(T6RSS-Q) - Toshiba Semiconductor and Storage

This substitute offers enhanced voltage rating at 550V Vdss, providing additional design margin above the 500V specification. Continuous drain current of 3.5A closely matches the 3.6A original specification. On-state resistance of 2.45Ω at 1.8A, 10V is within acceptable tolerance of the original 2.2Ω specification. Gate charge of 9nC provides improved switching characteristics. The device maintains TO-252-3 DPAK package compatibility. Product status is Active with RoHS compliance. Operating temperature range and MSL rating are equivalent to the original part. Power dissipation of 80W provides adequate thermal performance.

RJK4532DPD-00#J2 - Renesas Electronics Corporation

This substitute features reduced Vdss rating of 450V, which is below the original 500V specification. Continuous drain current of 4A exceeds the 3.6A requirement. On-state resistance of 2.3Ω is comparable to the original specification. Gate charge of 9nC indicates superior switching performance. The device is packaged in MP-3A, which differs from the TO-252-3 DPAK footprint of the original part, requiring PCB layout modification. Product status is Active with ROHS3 compliance. Power dissipation of 40.3W is lower than the original 78W specification. This substitute is suitable only for applications where 450V Vdss is acceptable and package footprint modification is feasible.

Frequently Asked Questions (FAQ)

Q: Can the RJK4532DPD-00#J2 be used as a direct replacement for the IRFR812PBF?

A: The RJK4532DPD-00#J2 is not a direct pin-compatible replacement. While electrical parameters are generally compatible, the package type differs (MP-3A versus TO-252-3 DPAK), requiring PCB layout modification. Additionally, the Vdss rating of 450V is below the original 500V specification and should only be used in applications where this lower voltage rating is acceptable.

Q: What is the primary advantage of the TK4P50D(T6RSS-Q) over the IRFR812PBF?

A: The TK4P50D provides superior on-state resistance (2Ω versus 2.2Ω) and reduced gate charge (9nC versus 20nC), resulting in lower conduction losses and faster switching performance. It maintains identical 500V Vdss rating and TO-252-3 DPAK package compatibility while offering higher continuous drain current (4A versus 3.6A).

Q: Are all substitute parts RoHS compliant?

A: Yes. The TK4P50D(T6RSS-Q) and TK4P55DA(T6RSS-Q) are RoHS Compliant. The RJK4532DPD-00#J2 is ROHS3 Compliant. All three substitute parts meet RoHS environmental compliance requirements.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values (9nC in the Toshiba devices versus 20nC in the IRFR812PBF) result in faster switching transitions and reduced gate drive power consumption. This is particularly important in high-frequency switching applications.

Q: Can the TK4P55DA(T6RSS-Q) be used in place of the IRFR812PBF?

A: Yes. The TK4P55DA provides 550V Vdss rating, exceeding the original 500V specification and offering additional design margin. Continuous drain current of 3.5A is within acceptable tolerance of the 3.6A requirement. The device maintains TO-252-3 DPAK package compatibility and equivalent operating temperature range. This substitute is suitable for direct replacement.

Q: What are the package compatibility considerations?

A: The IRFR812PBF uses TO-252-3 DPAK (2 Leads + Tab) surface mount package. The TK4P50D(T6RSS-Q) and TK4P55DA(T6RSS-Q) use identical TO-252-3 DPAK packaging, allowing direct PCB footprint compatibility. The RJK4532DPD-00#J2 uses MP-3A packaging, which requires PCB layout modification and is not pin-compatible.

Q: How do operating temperature ranges compare?

A: The IRFR812PBF operates from -55°C to 150°C (TJ). All three substitute parts support operation up to 150°C (TJ). The Toshiba devices (TK4P50D and TK4P55DA) meet the full temperature range requirement. The Renesas device (RJK4532DPD-00#J2) supports operation up to 150°C (TJ), meeting the upper temperature requirement.

Q: What is the difference between Tc and Ta temperature specifications?

A: Tc denotes case temperature measurement point, while Ta denotes ambient temperature measurement point. The IRFR812PBF specifies continuous drain current at Tc (case temperature), while the substitute parts specify at Ta (ambient temperature). Both measurement methods are valid for device characterization and do not affect substitution compatibility.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message