IRFR7746PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR7746PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 56A continuous drain current at 25°C. This device is packaged in TO-252AA (DPAK) surface mount configuration and is designed for high-current switching applications. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and production requirements. Suitable alternatives must maintain compatibility with the TO-252-3 package footprint and deliver comparable electrical performance within the specified operating parameters.

Substiute Parts

IRFR7746PBF

Infineon TechnologiesIn Stock: 867IRFR7746PBF Datasheet

Current PartRFQ

DMTH6009LK3-13

Diodes IncorporatedIn Stock: 12867DMTH6009LK3-13 Datasheet

MFR RecommendedRFQ

FDD10AN06A0

onsemiIn Stock: 27710FDD10AN06A0 Datasheet

MFR RecommendedRFQ

PSMN016-100BS,118

Nexperia USA Inc.In Stock: 4283PSMN016-100BS,118 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRFR7746PBF is determined by the following critical parameters:

Primary Compatibility Criteria:

• Package type: TO-252-3 (DPAK) or equivalent surface mount configuration
• Drain-to-source voltage rating (Vdss): minimum 75V
• Continuous drain current (Id): minimum 56A at 25°C
• On-state resistance (Rds On): comparable performance at specified gate voltage
• Gate threshold voltage (Vgs(th)): within acceptable switching range
• Operating temperature range: -55°C to 175°C minimum
• RoHS3 compliance and MSL rating: 1 (Unlimited)

Substitution Logic: Parts are grouped as suitable substitutes when they meet or exceed the voltage and current ratings while maintaining electrical characteristics within acceptable operating margins. The three identified substitute parts represent different trade-offs in voltage rating, current capacity, and package configuration, each suitable for specific application contexts.

Parameter Comparison

Engineering Selection Recommendations

DMTH6009LK3-13 (Diodes Incorporated): This substitute operates at a reduced voltage rating of 60V, which is below the original 75V specification. However, it delivers 59A continuous drain current, matching the current capacity of the IRFR7746PBF. The lower gate charge (33.5 nC) provides faster switching characteristics. This part is suitable for applications where the 75V rating is not critical and where reduced switching losses are beneficial. The part maintains TO-252-3 package compatibility and is currently in active production with full RoHS3 compliance.

FDD10AN06A0 (onsemi): This substitute also operates at 60V, below the original 75V specification, with 50A continuous drain current. It delivers superior power dissipation capability (135W) compared to the main part (99W), making it suitable for high-thermal-load applications. The gate charge of 37 nC is moderate, and the part is available in TO-252AA package configuration. This device is actively produced and fully compliant with RoHS3 requirements.

PSMN016-100BS,118 (Nexperia USA Inc.): This substitute exceeds the original voltage rating at 100V, providing additional voltage margin for applications subject to transient overvoltage conditions. It delivers 57A continuous drain current, closely matching the original specification. The higher on-state resistance (16 mOhm) represents a trade-off for the increased voltage rating. The D2PAK package differs from the original TO-252-3 footprint and requires PCB layout modification. This part is actively produced with full RoHS3 compliance and represents the highest voltage-rated option among the substitutes.

Frequently Asked Questions (FAQ)

Q: Can DMTH6009LK3-13 be used as a direct replacement for IRFR7746PBF?

A: DMTH6009LK3-13 is electrically compatible for applications where the 75V rating is not required. The 60V Vdss rating is lower than the original specification. If your circuit operates below 60V, this substitute provides equivalent or superior performance with faster switching characteristics due to lower gate charge. PCB footprint compatibility is maintained as both use TO-252-3 packaging.

Q: What are the package differences between the substitute parts?

A: DMTH6009LK3-13 and FDD10AN06A0 both use TO-252-3 (DPAK) packaging, maintaining direct PCB footprint compatibility with IRFR7746PBF. PSMN016-100BS,118 uses D2PAK (TO-263-3) packaging, which requires PCB layout modification and cannot be used as a direct drop-in replacement without redesign.

Q: Which substitute should I select for high-temperature applications?

A: All three substitutes maintain the same operating temperature range (-55°C to 175°C) as the original IRFR7746PBF. For thermal performance, FDD10AN06A0 offers the highest power dissipation rating (135W), making it the preferred choice for applications with elevated thermal loads.

Q: Are all substitutes RoHS3 compliant?

A: Yes. DMTH6009LK3-13, FDD10AN06A0, and PSMN016-100BS,118 are all ROHS3 compliant with MSL rating of 1 (Unlimited), matching the compliance profile of the original IRFR7746PBF.

Q: What is the impact of different gate charge values on circuit performance?

A: Gate charge (Qg) affects switching speed and driver power requirements. DMTH6009LK3-13 has the lowest gate charge (33.5 nC), enabling faster switching and lower driver losses. FDD10AN06A0 (37 nC) and PSMN016-100BS,118 (49 nC) have progressively higher gate charges. Lower gate charge reduces switching losses but may require driver circuit optimization.

Q: Can PSMN016-100BS,118 be used in circuits designed for 75V operation?

A: Yes. PSMN016-100BS,118 exceeds the 75V requirement with a 100V rating, providing additional voltage margin. However, the D2PAK package requires PCB redesign, and the higher on-state resistance (16 mOhm) may increase conduction losses compared to the original part.