IRFR7540PBF N-Channel MOSFET 60V 90A Equivalent & Substitute Parts

Part Overview

The IRFR7540PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 90A continuous drain current at 25°C. This device is part of the StrongIRFET™ series and is packaged in the TO-252-3 (DPAK) surface mount configuration. The part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRFR7540PBF

Infineon TechnologiesIn Stock: 5111IRFR7540PBF Datasheet

Current PartRFQ

IPD053N06NATMA1

Infineon TechnologiesIn Stock: 3656IPD053N06NATMA1 Datasheet

MFR RecommendedRFQ

FDD86540

onsemiIn Stock: 6873FDD86540 Datasheet

MFR RecommendedRFQ

PSMN7R6-60BS,118

Nexperia USA Inc.In Stock: 8919PSMN7R6-60BS,118 Datasheet

MFR RecommendedRFQ

TK4R4P06PL,RQ

Toshiba Semiconductor and StorageIn Stock: 1925TK4R4P06PL,RQ Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFR7540PBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal 60V
• FET Type: Must be N-Channel MOSFET
• Mounting Type: Must be Surface Mount
• Package Family: Must be compatible with TO-252-3 (DPAK) or equivalent footprint
• Operating Temperature Range: Must support -55°C to 175°C minimum
• RoHS Compliance: Must maintain ROHS3 Compliant status

Performance Parameters for Evaluation:

• Continuous Drain Current (Id): Substitute must meet or exceed 90A (Tc)
• Rds On (Max): Lower values indicate better performance; substitutes with Rds On ≤ 5.3mOhm are acceptable
• Gate Charge (Qg): Lower values reduce switching losses; range 27-130 nC acceptable
• Power Dissipation: Substitute must support minimum 83W (Tc)

The four substitute parts listed below meet all critical criteria and are suitable for direct replacement in applications where the IRFR7540PBF was originally specified.

Parameter Comparison

Engineering Selection Recommendations

IPD053N06NATMA1 (Infineon Technologies)

This substitute is manufactured by the same supplier as the original IRFR7540PBF and maintains identical voltage rating and operating temperature range. The OptiMOS™ series device is currently active in production. Gate charge is significantly lower (27 nC vs. 130 nC), reducing switching losses in high-frequency applications. Continuous drain current at Tc is 45A, which is lower than the original 90A specification. This part is suitable for applications where current requirements do not exceed 45A (Tc) or where lower switching losses are beneficial. Rds On specification of 5.3 mOhm is marginally higher than the original 4.8 mOhm.

FDD86540 (onsemi)

This onsemi PowerTrench® device meets the 60V voltage requirement and is actively produced. Continuous drain current at Tc is 50A, lower than the original 90A. Rds On of 4.1 mOhm is superior to the original specification. Power dissipation capability is 127W (Tc), meeting thermal requirements. Operating temperature range extends to 150°C maximum, which is 25°C lower than the original specification. This part is suitable for applications where maximum junction temperature does not exceed 150°C and current requirements do not exceed 50A (Tc).

PSMN7R6-60BS,118 (Nexperia USA Inc.)

This Nexperia device provides the highest continuous drain current rating at 92A (Tc), exceeding the original 90A specification. The D2PAK package (TO-263-3) offers superior thermal performance compared to standard DPAK through increased copper area. Power dissipation capability is 149W (Tc), exceeding the original 140W. Operating temperature range matches the original at -55°C to 175°C. Gate charge of 38.7 nC is lower than the original, reducing switching losses. Rds On of 7.8 mOhm is higher than the original specification. This part requires PCB layout modification due to different package footprint (D2PAK vs. DPAK).

TK4R4P06PL,RQ (Toshiba Semiconductor and Storage)

This Toshiba U-MOSIX-H series device is actively produced and meets the 60V voltage requirement. Continuous drain current at Tc is 58A, lower than the original 90A. Rds On of 4.4 mOhm is favorable compared to the original 4.8 mOhm. Power dissipation capability is 87W (Tc), lower than the original 140W. Operating temperature range matches the original at -55°C to 175°C. Gate charge of 48.2 nC is significantly lower than the original, reducing switching losses. This part is suitable for applications where current requirements do not exceed 58A (Tc) and thermal dissipation is not critical.

Frequently Asked Questions (FAQ)

Q: Can I use IPD053N06NATMA1 as a direct replacement for IRFR7540PBF?

A: IPD053N06NATMA1 is electrically compatible with IRFR7540PBF in terms of voltage rating and package footprint. However, the continuous drain current rating is 45A (Tc) compared to 90A (Tc) for the original part. Direct replacement is suitable only if your application current does not exceed 45A (Tc). Both parts share identical operating temperature range (-55°C to 175°C) and RoHS compliance status.

Q: What is the difference between DPAK and D2PAK packages?

A: DPAK (TO-252-3) and D2PAK (TO-263-3) are both surface mount packages with similar pinout but different physical dimensions and thermal characteristics. D2PAK provides larger copper area for improved heat dissipation. The PSMN7R6-60BS,118 uses D2PAK packaging, which requires PCB layout modification if replacing a DPAK-packaged device. Pin-to-pin compatibility exists, but footprint changes are necessary.

Q: Which substitute part has the lowest on-resistance (Rds On)?

A: FDD86540 has the lowest Rds On specification at 4.1 mOhm (measured at 21.5A, 10V gate voltage). This represents superior conduction performance compared to the original IRFR7540PBF at 4.8 mOhm (measured at 66A, 10V). Lower Rds On reduces power dissipation during conduction.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All four substitute parts listed (IPD053N06NATMA1, FDD86540, PSMN7R6-60BS,118, and TK4R4P06PL,RQ) maintain ROHS3 Compliant status, matching the original IRFR7540PBF specification.

Q: Which substitute part has the lowest gate charge?

A: IPD053N06NATMA1 has the lowest gate charge at 27 nC (measured at 10V), compared to 130 nC for the original IRFR7540PBF. Lower gate charge reduces switching losses and improves efficiency in high-frequency switching applications.

Q: Can I use FDD86540 in applications requiring operation above 150°C?

A: No. FDD86540 has a maximum operating temperature of 150°C (TJ), which is 25°C lower than the original IRFR7540PBF specification of 175°C (TJ). For applications requiring operation up to 175°C, use IPD053N06NATMA1, PSMN7R6-60BS,118, or TK4R4P06PL,RQ instead.

Q: What is the current rating difference between IRFR7540PBF and its substitutes?

A: IRFR7540PBF is rated for 90A (Tc). Substitute current ratings are: IPD053N06NATMA1 at 45A (Tc), FDD86540 at 50A (Tc), PSMN7R6-60BS,118 at 92A (Tc), and TK4R4P06PL,RQ at 58A (Tc). Only PSMN7R6-60BS,118 exceeds the original current rating.

Q: Do all substitute parts use the same package as IRFR7540PBF?

A: No. IRFR7540PBF, IPD053N06NATMA1, and TK4R4P06PL,RQ use DPAK (TO-252-3) packaging. FDD86540 uses TO-252AA, which is footprint-compatible with DPAK. PSMN7R6-60BS,118 uses D2PAK (TO-263-3), which requires PCB layout modification.

Q: Which substitute part is best for high-frequency switching applications?

A: IPD053N06NATMA1 has the lowest gate charge at 27 nC, making it optimal for reducing switching losses in high-frequency applications. However, its current rating of 45A (Tc) must be verified against application requirements.

Q: Are all substitute parts currently in active production?

A: Yes. All four substitute parts have Active product status. The original IRFR7540PBF is Discontinued at DiGi Electronics, making these active alternatives necessary for new designs and ongoing procurement.