IRFR7440PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR7440PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 90A continuous drain current at 25°C. This device is housed in a TO-252AA (DPAK) surface mount package and is part of the HEXFET® series. The part is currently discontinued at DiGi Electronics, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	90	A (Tc)
Rds On (Max) @ Id, Vgs	2.4 mOhm @ 90A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max)	3.9	V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	134	nC @ 10V
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
Gate Voltage (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	4610	pF @ 25V

Substitute Part Grouping Explanation

Substitution of the IRFR7440PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): Must equal 40V
Package Type: Must be TO-252-3 (DPAK) surface mount
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide (MOSFET)
Gate Voltage (Vgs Max): Must support ±20V

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 90A @ 25°C
Rds On (Max): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce gate drive requirements
Power Dissipation: Must support thermal requirements of application
Operating Temperature Range: Must encompass -55°C to 175°C (TJ)

The two substitute parts listed below meet all primary criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	IRFR7440PBF (Main)	STD120N4F6 (Substitute)	TK100S04N1L,LQ (Substitute)	Unit
Manufacturer	Infineon Technologies	STMicroelectronics	Toshiba Semiconductor	—
Drain to Source Voltage (Vdss)	40	40	40	V
Continuous Drain Current (Id) @ 25°C	90	80	100	A
Rds On (Max) @ Vgs 10V	2.4 mOhm @ 90A	4.0 mOhm @ 40A	2.3 mOhm @ 50A	mOhm
Gate Threshold Voltage Vgs(th) (Max)	3.9 @ 100µA	4.0 @ 250µA	2.5 @ 500µA	V
Gate Charge (Qg) (Max) @ 10V	134	65	76	nC
Power Dissipation (Max)	140	110	100	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	—
Gate Voltage (Max)	±20	±20	±20	V
Input Capacitance (Ciss) (Max)	4610 @ 25V	3850 @ 25V	5490 @ 10V	pF
Product Status	Discontinued	Obsolete	Active	—
RoHS Compliance	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

STD120N4F6 (STMicroelectronics): This substitute meets all primary electrical and mechanical compatibility criteria. The device is rated for 80A continuous drain current, which is 10A below the original specification. The Rds On value of 4.0 mOhm at 40A represents higher on-resistance compared to the IRFR7440PBF. Power dissipation is rated at 110W, which is 30W lower than the original part. This substitute is suitable for applications where the 80A current rating is sufficient and thermal dissipation requirements do not exceed 110W. The part carries AEC-Q101 automotive qualification and ROHS3 compliance. Current product status is listed as Obsolete.

TK100S04N1L,LQ (Toshiba Semiconductor and Storage): This substitute exceeds the primary electrical specifications of the IRFR7440PBF. The device is rated for 100A continuous drain current, providing 10A additional capacity. The Rds On value of 2.3 mOhm at 50A is superior to the original specification. Gate charge is 76 nC, representing a 43% reduction compared to the original 134 nC, which reduces gate drive power requirements. Power dissipation is rated at 100W. This substitute is packaged in DPAK+ and maintains full compatibility with TO-252-3 (DPAK) footprints. Product status is Active, ensuring ongoing availability. ROHS3 compliance is confirmed.

Selection Basis: Both substitutes maintain the 40V Vdss rating and ±20V gate voltage specification. Both are housed in compatible DPAK surface mount packages. Operating temperature ranges encompass the original -55°C to 175°C specification. All three devices are ROHS3 compliant and carry EAR99 ECCN classification. The TK100S04N1L,LQ is recommended for new designs requiring active product status and superior electrical performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can STD120N4F6 be used as a direct replacement for IRFR7440PBF?

A: STD120N4F6 meets all primary substitution criteria: 40V Vdss rating, N-Channel MOSFET technology, TO-252-3 (DPAK) package, and ±20V gate voltage specification. However, the 80A continuous drain current rating is 10A below the original 90A specification. Substitution is valid only if the application current requirement does not exceed 80A at 25°C. The higher Rds On value (4.0 mOhm vs. 2.4 mOhm) will result in increased power dissipation at equivalent current levels.

Q: Is TK100S04N1L,LQ compatible with existing IRFR7440PBF PCB layouts?

A: Yes. TK100S04N1L,LQ is packaged in DPAK+ and maintains full mechanical and electrical compatibility with TO-252-3 (DPAK) footprints. Pin configuration, lead spacing, and thermal tab dimensions are compatible. No PCB redesign is required for package substitution.

Q: What are the key electrical differences between the three devices?

A: The IRFR7440PBF provides 90A continuous drain current with 2.4 mOhm Rds On and 134 nC gate charge. STD120N4F6 provides 80A with 4.0 mOhm Rds On and 65 nC gate charge. TK100S04N1L,LQ provides 100A with 2.3 mOhm Rds On and 76 nC gate charge. The TK100S04N1L,LQ offers superior current capacity and lower on-resistance, while STD120N4F6 offers the lowest gate charge requirement.

Q: Are all three devices RoHS compliant?

A: Yes. IRFR7440PBF, STD120N4F6, and TK100S04N1L,LQ are all ROHS3 compliant. All devices carry REACH Unaffected or REACH Unaffected status and EAR99 ECCN classification.

Q: Which substitute is recommended for new product designs?

A: TK100S04N1L,LQ is recommended for new designs. This device carries Active product status, ensuring long-term availability and supply chain stability. It provides superior electrical performance with 100A continuous drain current, lower Rds On (2.3 mOhm), and reduced gate charge (76 nC). All primary substitution criteria are met with enhanced specifications.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge directly affects gate drive circuit requirements. The IRFR7440PBF requires 134 nC gate charge, while TK100S04N1L,LQ requires only 76 nC (43% reduction) and STD120N4F6 requires 65 nC (52% reduction). Lower gate charge reduces gate drive power dissipation and allows faster switching transitions with equivalent drive current. Circuit redesign is not required, but gate drive optimization may be beneficial.

Q: Can these substitutes be used in automotive applications?

A: STD120N4F6 carries AEC-Q101 automotive qualification. IRFR7440PBF and TK100S04N1L,LQ do not list automotive qualification in the provided specifications. Automotive application requirements must be verified against specific design standards and qualification documentation.

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