IRFR48ZPBF N-Channel MOSFET 55V 42A DPAK Equivalent & Substitute Parts

Part Overview

The IRFR48ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 42A continuous drain current in a surface mount DPAK package. This device is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFR48ZPBF belongs to the HEXFET® series and is designed for applications requiring moderate to high current switching in compact form factors. Discontinuation status necessitates identification of functionally compatible alternatives that maintain electrical and mechanical compatibility within the same package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	42	A
On-State Resistance (Rds On) @ 37A, 10V	11	mOhm
Gate Threshold Voltage (Vgs(th)) @ 50µA	4	V
Gate Charge (Qg) @ 10V	60	nC
Power Dissipation (Max)	91	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 DPAK	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFR48ZPBF is determined by the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Package Type: Must be TO-252-3 DPAK (2 Leads + Tab, SC-63)
Mounting Type: Surface Mount
Operating Temperature Range: Must support -55°C to 175°C
RoHS Compliance: ROHS3 Compliant

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 42A
On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce drive circuit requirements
Power Dissipation: Must support thermal requirements of the application

The three substitute parts identified (STD60NF55LT4, STD65N55F3, STD70N6F3) meet the primary criteria of voltage rating, package compatibility, and compliance. They differ in current rating, on-state resistance, and power dissipation characteristics, allowing selection based on specific application requirements.

Parameter Comparison

Parameter	IRFR48ZPBF	STD60NF55LT4	STD65N55F3	STD70N6F3	Unit
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	—
Vdss	55	55	55	60	V
Id @ 25°C	42	60	80	70	A
Rds On (Max)	11 @ 37A, 10V	15 @ 30A, 10V	8.5 @ 32A, 10V	10.5 @ 35A, 10V	mOhm
Vgs(th) (Max)	4 @ 50µA	2 @ 250µA	4 @ 250µA	4 @ 250µA	V
Qg (Max)	60 @ 10V	56 @ 5V	45 @ 10V	35 @ 10V	nC
Power Dissipation (Max)	91	100	110	110	W
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	—
Product Status	Discontinued	Active	Active	Obsolete	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

STD60NF55LT4 (STMicroelectronics STripFET™ II)

This substitute provides 60A continuous drain current, exceeding the IRFR48ZPBF specification of 42A. The 55V voltage rating matches exactly. Product status is Active, ensuring long-term availability. RoHS3 compliance and identical DPAK packaging enable direct mechanical substitution. The on-state resistance of 15mOhm is higher than the original part, resulting in increased power dissipation in high-current applications. Gate charge of 56nC at 5V is comparable to the original. This part is suitable for applications where current margin is required and slightly elevated on-state losses are acceptable.

STD65N55F3 (STMicroelectronics STripFET™)

This substitute provides 80A continuous drain current with improved on-state resistance of 8.5mOhm, superior to the IRFR48ZPBF at 11mOhm. The 55V voltage rating matches exactly. Product status is Active with confirmed long-term availability. RoHS3 compliance and DPAK packaging ensure compatibility. Power dissipation rating of 110W exceeds the original 91W. Gate charge of 45nC at 10V is lower than the original, reducing drive circuit requirements. This part is recommended for applications requiring improved efficiency and thermal performance.

STD70N6F3 (STMicroelectronics STripFET™ III)

This substitute provides 70A continuous drain current with on-state resistance of 10.5mOhm, comparable to the IRFR48ZPBF. The voltage rating is 60V, exceeding the original 55V specification. Product status is Obsolete, indicating limited future availability despite current inventory. RoHS3 compliance and DPAK packaging provide mechanical compatibility. Gate charge of 35nC at 10V is the lowest among substitutes, offering minimal drive circuit loading. This part should be considered only when current inventory is available and long-term supply is not critical.

Primary Recommendation: STD65N55F3 for new designs requiring active product status and improved electrical performance.

Secondary Recommendation: STD60NF55LT4 for applications where exact current margin and conservative design margins are prioritized.

Frequently Asked Questions (FAQ)

Q: Can the STD60NF55LT4 be used as a direct replacement for the IRFR48ZPBF?

A: Yes, within the constraints of your application. Both devices share identical 55V voltage rating and TO-252-3 DPAK packaging. The STD60NF55LT4 provides higher current capability (60A vs. 42A) and is mechanically and electrically compatible. However, the on-state resistance is higher (15mOhm vs. 11mOhm), which increases power dissipation. Verify that your thermal design accommodates the additional heat generation.

Q: What is the primary difference between STD65N55F3 and STD60NF55LT4?

A: The STD65N55F3 offers superior on-state resistance (8.5mOhm vs. 15mOhm), resulting in lower power dissipation and improved efficiency. It also provides higher current capability (80A vs. 60A) and lower gate charge (45nC vs. 56nC). The STD60NF55LT4 is suitable when conservative design margins and slightly higher on-state losses are acceptable.

Q: Why is STD70N6F3 listed as Obsolete?

A: STD70N6F3 is marked Obsolete by the manufacturer, indicating it is no longer in active production. While current inventory exists, future availability cannot be guaranteed. This part should not be selected for new designs requiring long-term supply assurance.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts (STD60NF55LT4, STD65N55F3, STD70N6F3) are RoHS3 compliant, matching the compliance status of the IRFR48ZPBF. All parts are also REACH Unaffected and classified as EAR99 for export control purposes.

Q: Can I use a substitute with a higher voltage rating, such as STD70N6F3 at 60V instead of 55V?

A: Yes. A higher voltage rating provides additional design margin and does not compromise compatibility. The STD70N6F3 at 60V is suitable for applications originally designed for 55V. However, verify that your circuit design does not depend on the exact 55V threshold characteristics.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge (Qg) reduces the charge that must be supplied by the gate driver circuit, resulting in faster switching transitions and lower drive circuit power consumption. The STD65N55F3 (45nC) and STD70N6F3 (35nC) require less gate drive energy than the IRFR48ZPBF (60nC), allowing use of lower-power gate driver ICs or simplified drive circuits.

Q: Are there thermal considerations when substituting these parts?

A: Yes. On-state resistance directly affects power dissipation (P = I²R). The STD65N55F3 with lower Rds On (8.5mOhm) generates less heat than the IRFR48ZPBF (11mOhm) at equivalent current levels. The STD60NF55LT4 with higher Rds On (15mOhm) generates more heat. Verify that your PCB thermal design and heatsinking accommodate the power dissipation of your selected substitute.

Q: Is the DPAK package identical across all parts?

A: Yes. All parts use the TO-252-3 DPAK (2 Leads + Tab, SC-63) package. Pin assignments and mechanical dimensions are identical, enabling direct PCB substitution without layout modifications.

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