IRFR4620PBF N-Channel MOSFET 200V 24A Equivalent & Substitute Parts

Part Overview

The IRFR4620PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the TO-252AA (DPAK) package. This device features a 200V drain-to-source voltage rating with 24A continuous drain current capability and 144W maximum power dissipation. The IRFR4620PBF is classified as discontinued at DiGi Electronics, necessitating identification of equivalent substitute components that maintain functional compatibility within the same electrical and mechanical parameters.

Substiute Parts

IRFR4620PBF
Infineon TechnologiesIn Stock: 45205IRFR4620PBF Datasheet
IRFR4620PBF
Current Part
STD20NF20
STMicroelectronicsIn Stock: 2150STD20NF20 Datasheet
STD20NF20
MFR Recommended
STD25NF20
STMicroelectronicsIn Stock: 889308STD25NF20 Datasheet
STD25NF20
MFR Recommended

Key Parameters

Parameter Value Unit
Manufacturer Part Number IRFR4620PBF
Manufacturer Infineon Technologies
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 24 A
Rds On (Max) @ 15A, 10V 78 mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA 5 V
Gate Charge (Qg) @ 10V 38 nC
Power Dissipation (Max) 144 W
Operating Temperature Range -55 to 175 °C
Package Type TO-252-3 (DPAK)
Mounting Type Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRFR4620PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
  • Package Type: Must be TO-252-3 (DPAK) surface mount
  • FET Type: Must be N-Channel MOSFET
  • Operating Temperature Range: Must support -55°C to 175°C
  • RoHS Compliance: Must maintain ROHS3 compliance status

Secondary Compatibility Parameters:

  • Continuous Drain Current (Id): Substitute must support minimum 18A at 25°C
  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Gate Charge (Qg): Affects switching speed and drive requirements
  • Power Dissipation: Must support thermal requirements of the application

The identified substitute parts STD20NF20 and STD25NF20 (both STMicroelectronics STripFET™ series) meet the primary substitution criteria. Both devices feature identical 200V Vdss rating, DPAK surface mount packaging, and -55°C to 175°C operating temperature range. The continuous drain current of 18A in these substitutes is lower than the original 24A specification, requiring application-level current capacity verification.

Parameter Comparison

Parameter IRFR4620PBF STD20NF20 STD25NF20 Unit
Manufacturer Infineon Technologies STMicroelectronics STMicroelectronics
Series HEXFET® STripFET™ STripFET™
Drain to Source Voltage (Vdss) 200 200 200 V
Continuous Drain Current (Id) @ 25°C 24 18 18 A
Rds On (Max) 78 @ 15A, 10V 125 @ 10A, 10V 125 @ 10A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) 5 @ 100µA 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) @ 10V 38 39 39 nC
Input Capacitance (Ciss) 1710 @ 50V 940 @ 25V 940 @ 25V pF
Power Dissipation (Max) 144 110 110 W
Operating Temperature Range -55 to 175 -55 to 175 -55 to 175 °C
Package Type TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK)
Mounting Type Surface Mount Surface Mount Surface Mount
Product Status Discontinued Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STD20NF20 Selection Criteria:

The STD20NF20 is an active product from STMicroelectronics with current inventory availability (2100 pcs). This substitute maintains full electrical compatibility at the 200V Vdss rating and DPAK package specification. The device is ROHS3 compliant and operates across the identical -55°C to 175°C temperature range. The 18A continuous drain current rating is lower than the original 24A specification; applications operating at or below 18A continuous current are directly compatible. The on-state resistance of 125 mOhm (measured at 10A, 10V) is higher than the original 78 mOhm specification, resulting in increased power dissipation during conduction. The maximum power dissipation rating of 110W is lower than the original 144W, requiring thermal design verification for high-power applications.

STD25NF20 Selection Criteria:

The STD25NF20 is an active automotive-grade product from STMicroelectronics with extensive inventory availability (889,291 pcs). This substitute meets identical electrical specifications to the STD20NF20 while carrying AEC-Q101 automotive qualification. The device is suitable for applications requiring automotive-grade component certification. All electrical parameters, package specifications, and compliance certifications match the STD20NF20. The automotive qualification adds process and reliability documentation suitable for automotive and industrial applications requiring higher qualification standards.

Substitution Feasibility:

Both substitute parts are suitable for applications where the 18A continuous drain current rating is sufficient. Applications requiring the full 24A continuous current capability of the original IRFR4620PBF cannot use these substitutes without circuit redesign. The higher on-state resistance requires thermal analysis to confirm adequate heat dissipation within the 110W power dissipation limit.

Frequently Asked Questions (FAQ)

Q: Can STD20NF20 or STD25NF20 directly replace IRFR4620PBF in all applications?

A: Direct replacement is possible only in applications where continuous drain current does not exceed 18A. The substitute parts are rated for 18A continuous current versus the original 24A specification. Applications operating above 18A require circuit redesign or alternative component selection.

Q: What is the difference between STD20NF20 and STD25NF20?

A: Both devices have identical electrical specifications and package types. The primary difference is that STD25NF20 carries AEC-Q101 automotive qualification, making it suitable for automotive applications requiring formal qualification documentation. STD20NF20 is the standard industrial-grade equivalent.

Q: How does the higher on-state resistance of the substitutes affect circuit performance?

A: The substitute parts have Rds On of 125 mOhm (at 10A, 10V) compared to the original 78 mOhm (at 15A, 10V). Higher on-state resistance increases conduction losses and heat generation. Thermal design must account for the lower maximum power dissipation rating of 110W versus the original 144W. Applications with high switching frequency or continuous high current operation require thermal analysis.

Q: Are the substitute parts pin-compatible with IRFR4620PBF?

A: Yes. All three devices use the TO-252-3 (DPAK) package with identical pin configuration: Gate, Drain, and Source connections are in the same physical locations.

Q: What is the impact of lower input capacitance in the substitute parts?

A: The substitute parts have input capacitance (Ciss) of 940 pF at 25V, compared to 1710 pF at 50V in the original device. Lower input capacitance reduces gate drive requirements and improves switching speed. This is a performance advantage in most applications.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both STD20NF20 and STD25NF20 are ROHS3 compliant, matching the compliance status of the original IRFR4620PBF.

Q: What is the gate charge difference between the original and substitute parts?

A: Gate charge is essentially identical: 38 nC in the original IRFR4620PBF versus 39 nC in both substitute parts (both measured at 10V). This negligible difference has no practical impact on gate drive circuit design.

Q: Can I use these substitutes in high-temperature applications?

A: Yes. Both substitute parts support the full -55°C to 175°C operating temperature range, identical to the original device. No temperature-related limitations exist for substitution.

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