IRFR4615PBF N-Channel MOSFET 150V 33A DPAK Equivalent & Substitute Parts

Part Overview

The IRFR4615PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 33A continuous drain current at 25°C. The device is housed in a TO-252AA (DPAK) surface mount package and is designed for high-efficiency switching applications. This part is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Substiute Parts

IRFR4615PBF
Infineon TechnologiesIn Stock: 3583IRFR4615PBF Datasheet
IRFR4615PBF
Current Part
STD15NF10T4
STMicroelectronicsIn Stock: 15410STD15NF10T4 Datasheet
STD15NF10T4
MFR Recommended
STD25NF10LT4
STMicroelectronicsIn Stock: 688245STD25NF10LT4 Datasheet
STD25NF10LT4
MFR Recommended
STD25NF10T4
STMicroelectronicsIn Stock: 1000201STD25NF10T4 Datasheet
STD25NF10T4
MFR Recommended
STD26NF10
STMicroelectronicsIn Stock: 22979STD26NF10 Datasheet
STD26NF10
MFR Recommended
SUD80460E-GE3
Vishay SiliconixIn Stock: 15324SUD80460E-GE3 Datasheet
SUD80460E-GE3
MFR Recommended

Key Parameters

Parameter Value Unit
Manufacturer Part Number IRFR4615PBF
Manufacturer Infineon Technologies
FET Type N-Channel
Drain to Source Voltage (Vdss) 150 V
Continuous Drain Current (Id) @ 25°C 33 A
On-Resistance (Rds On) @ 21A, 10V 42 mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA 5 V
Gate Charge (Qg) @ 10V 26 nC
Power Dissipation (Max) 144 W
Operating Temperature Range -55 to 175 °C
Package Type TO-252-3 DPAK
Product Status Discontinued

Substitute Part Grouping Explanation

Substitution of the IRFR4615PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 150V
  • Continuous Drain Current (Id): Must equal or exceed 33A at 25°C
  • Package Type: Must be TO-252-3 DPAK (surface mount compatibility)
  • FET Type: Must be N-Channel MOSFET
  • Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Parameters:

  • On-Resistance (Rds On): Lower values indicate improved efficiency
  • Gate Charge (Qg): Lower values reduce switching losses
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with drive circuitry
  • Maximum Gate Voltage (Vgs Max): Must accommodate ±20V drive signals

The substitute parts listed below meet the primary criteria. Parts with lower Vdss ratings (100V) are listed as functional alternatives for applications where the full 150V rating is not required.

Parameter Comparison

Parameter IRFR4615PBF SUD80460E-GE3 STD25NF10LT4 STD25NF10T4 STD26NF10 STD15NF10T4 Unit
Manufacturer Infineon Vishay Siliconix STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Vdss 150 150 100 100 100 100 V
Id @ 25°C 33 42 25 25 25 23 A
Rds On (Max) @ 10V 42 44.7 35 38 38 65 mOhm
Vgs(th) @ Id 5 @ 100µA 4 @ 250µA 2.5 @ 250µA 4 @ 250µA 4 @ 250µA 4 @ 250µA V
Qg @ 10V 26 16 52 55 55 40 nC
Ciss @ Vds 1750 @ 50V 560 @ 50V 1710 @ 25V 1550 @ 25V 1550 @ 25V 870 @ 25V pF
Power Dissipation (Max) 144 65.2 100 100 100 70 W
Package TO-252AA DPAK TO-252AA DPAK DPAK DPAK DPAK DPAK
Operating Temp Range -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 °C
Product Status Discontinued Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Voltage-Rated Substitute (150V Category):

The SUD80460E-GE3 (Vishay Siliconix ThunderFET®) is the primary substitute for the IRFR4615PBF. Both devices share the same 150V Vdss rating and TO-252AA DPAK package. The SUD80460E-GE3 provides 42A continuous drain current, exceeding the IRFR4615PBF specification of 33A. The SUD80460E-GE3 is currently in active production status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). This part is suitable for direct replacement in applications requiring 150V operation.

Functional Alternatives (100V Category):

For applications where the 150V voltage rating is not required, the STMicroelectronics STripFET™ II series offers active alternatives:

  • STD25NF10LT4 and STD25NF10T4: Both rated for 100V Vdss with 25A continuous drain current. The STD25NF10LT4 features lower on-resistance (35 mOhm @ 10V) and lower gate threshold voltage (2.5V @ 250µA), providing improved switching efficiency. The STD25NF10T4 offers standard gate threshold voltage (4V @ 250µA) with 38 mOhm on-resistance. Both are in active production with extensive inventory availability.

  • STD26NF10: Electrically identical to STD25NF10T4 with 100V Vdss, 25A continuous drain current, and 38 mOhm on-resistance. Active production status with RoHS3 compliance.

  • STD15NF10T4: Rated for 100V Vdss with 23A continuous drain current. Suitable for applications with lower current requirements. Features 65 mOhm on-resistance and 40 nC gate charge.

All substitute parts maintain the same operating temperature range (-55°C to 175°C), DPAK surface mount package configuration, and regulatory compliance (RoHS3, REACH Unaffected, EAR99 ECCN classification).

Frequently Asked Questions (FAQ)

Q: Can the SUD80460E-GE3 be used as a direct replacement for the IRFR4615PBF?

A: Yes. Both devices are rated for 150V Vdss, feature TO-252AA DPAK packaging, and support the same operating temperature range. The SUD80460E-GE3 provides higher continuous drain current (42A vs. 33A), making it suitable for direct substitution. Verify that your PCB layout and thermal management accommodate the device specifications.

Q: Why are the STMicroelectronics STD25NF10 series parts listed as substitutes if they are only rated for 100V?

A: The STD25NF10 series parts are listed as functional alternatives for applications where the full 150V voltage rating is not required. These parts offer active production status, superior on-resistance characteristics (35-38 mOhm), and extensive inventory availability. Use these parts only in circuits where the maximum drain-to-source voltage does not exceed 100V.

Q: What is the difference between STD25NF10LT4 and STD25NF10T4?

A: Both parts are rated for 100V Vdss and 25A continuous drain current with identical power dissipation (100W). The STD25NF10LT4 features lower on-resistance (35 mOhm @ 10V) and lower gate threshold voltage (2.5V @ 250µA), resulting in improved switching efficiency and lower gate drive requirements. The STD25NF10T4 has standard gate threshold voltage (4V @ 250µA) with slightly higher on-resistance (38 mOhm @ 10V). Select based on your gate drive circuit capabilities and efficiency requirements.

Q: Are all substitute parts available in the same DPAK package?

A: Yes. All listed substitute parts use the TO-252-3 DPAK (2 Leads + Tab) surface mount package, designated as SC-63. This ensures mechanical and thermal compatibility with existing PCB designs. No package conversion is required.

Q: What is the inventory status of these substitute parts?

A: The SUD80460E-GE3 has 15,300 pieces in stock. The STMicroelectronics parts have significantly higher inventory: STD25NF10T4 (1,000,100 pieces), STD25NF10LT4 (688,200 pieces), STD26NF10 (22,881 pieces), and STD15NF10T4 (15,300 pieces). All parts are new original stock with active production status.

Q: Do all substitute parts meet RoHS3 compliance?

A: Yes. All listed substitute parts are RoHS3 compliant with REACH Unaffected status and EAR99 ECCN classification, matching the regulatory compliance of the IRFR4615PBF.

Q: Which substitute part should I select for a new design?

A: For 150V applications, select the SUD80460E-GE3. For 100V applications, select STD25NF10LT4 for superior efficiency or STD25NF10T4 for standard performance. All parts are in active production with full regulatory compliance and extensive inventory support.

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