IRFR4105ZPBF Equivalent & Substitute Parts

Part Overview

The IRFR4105ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 30A continuous drain current in a TO-252-3 (DPAK) surface mount package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
Rds On (Max) @ 18A, 10V	24.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	27	nC
Power Dissipation (Max)	48	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	-
Mounting Type	Surface Mount	-

Substitute Part Grouping Explanation

Substitution eligibility for the IRFR4105ZPBF is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V to ensure safe operation within the original circuit voltage envelope.

Current Rating Compatibility: Substitute parts must support a continuous drain current (Id) of at least 30A at 25°C to maintain equivalent current-handling capability.

On-Resistance (Rds On): Substitute parts should maintain comparable or lower Rds On values to prevent excessive power dissipation and thermal stress in the application.

Gate Charge (Qg): Lower gate charge values reduce switching losses and improve efficiency; higher values are acceptable if other parameters are met.

Package Compatibility: The original TO-252-3 (DPAK) package footprint is preferred for direct PCB replacement without layout modifications.

Operating Temperature Range: Substitute parts must support the full -55°C to 175°C operating range.

Compliance & Status: Active product status ensures long-term availability and supply chain reliability.

The following substitute parts meet these criteria with varying trade-offs in voltage rating, current capacity, and thermal performance.

Parameter Comparison

Parameter	IRFR4105ZPBF	IPD35N10S3L26ATMA1	IPD30N10S3L34ATMA1	IAUC41N06S5N102ATMA1	DMN6040SK3-13
Manufacturer	Infineon	Infineon	Infineon	Infineon	Diodes Inc.
Vdss (V)	55	100	100	60	60
Id @ 25°C (A)	30	35	30	47	20
Rds On (Max) @ 10V (mOhm)	24.5 @ 18A	24 @ 35A	31 @ 30A	10.2 @ 20A	40 @ 20A
Gate Charge Qg @ 10V (nC)	27	39	31	16.3	22.4
Power Dissipation (Max) (W)	48	71	57	42	42
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 150
Package	TO-252-3 (DPAK)	TO-252-3 (DPAK)	TO-252-3 (DPAK)	PG-TDSON-8-33	TO-252-3 (DPAK)
Product Status	Discontinued	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

IPD35N10S3L26ATMA1 (Infineon OptiMOS™): This part provides the closest electrical match with 100V Vdss rating, 35A continuous current, and identical TO-252-3 package footprint. The 24 mOhm Rds On at 35A exceeds the original specification, and 71W power dissipation provides thermal margin. Active product status ensures supply availability. Recommended for direct replacement in applications where higher voltage rating is acceptable.

IPD30N10S3L34ATMA1 (Infineon OptiMOS™): This part maintains the original 30A current rating with 100V Vdss and TO-252-3 package compatibility. The 31 mOhm Rds On is slightly higher than the original, resulting in 57W power dissipation. Active status and identical package enable straightforward PCB substitution without layout changes.

IAUC41N06S5N102ATMA1 (Infineon OptiMOS™-5): This automotive-grade part (AEC-Q101 qualified) offers 60V Vdss and 47A continuous current in an 8-pin PG-TDSON-8 package. Superior Rds On performance (10.2 mOhm) and lower gate charge (16.3 nC) reduce switching losses. Package change requires PCB layout modification. Suitable for applications requiring automotive qualification.

DMN6040SK3-13 (Diodes Incorporated): This part provides 60V Vdss and 20A continuous current in TO-252-3 package. The 40 mOhm Rds On and lower current rating make this suitable only for applications with reduced current requirements. Operating temperature maximum of 150°C is 25°C below the original specification. Active status supports availability.

Frequently Asked Questions (FAQ)

Q: Can IPD35N10S3L26ATMA1 directly replace IRFR4105ZPBF without circuit modification?

A: Yes, for most applications. Both devices use the same TO-252-3 package and gate drive voltage (10V). The higher 100V Vdss rating provides additional voltage margin. Verify that the application circuit does not depend on the lower 55V rating for specific protection or biasing functions.

Q: What is the impact of higher Rds On values in substitute parts?

A: Higher on-resistance increases conduction losses, resulting in greater heat dissipation. For example, IPD30N10S3L34ATMA1 at 31 mOhm versus the original 24.5 mOhm increases power loss by approximately 27% at full current. Thermal design must accommodate the higher power dissipation rating (57W versus 48W).

Q: Why does IAUC41N06S5N102ATMA1 require PCB layout changes?

A: This part uses an 8-pin PG-TDSON-8 package instead of the 3-pin TO-252-3 (DPAK) package. The different pin configuration and footprint require PCB redesign. However, the superior electrical performance and automotive qualification may justify the layout effort for new designs.

Q: Is DMN6040SK3-13 suitable for the original application?

A: Only if the application current requirement is 20A or less. The 20A continuous rating is 33% below the original 30A specification. Additionally, the maximum operating temperature of 150°C is 25°C lower than the original, limiting thermal headroom in high-temperature environments.

Q: What is the significance of AEC-Q101 qualification on IAUC41N06S5N102ATMA1?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability and quality standards. This certification is required for automotive applications but is not necessary for industrial or consumer applications. The qualification does not affect electrical performance in non-automotive circuits.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: No. Each substitute part has different electrical characteristics. Once a specific substitute is selected and validated in the circuit, that part number must be used consistently. Mixing different substitutes in production introduces uncontrolled performance variation.

Q: What is the gate charge difference impact between IRFR4105ZPBF (27 nC) and IAUC41N06S5N102ATMA1 (16.3 nC)?

A: Lower gate charge reduces the energy required to switch the transistor, decreasing switching losses and improving efficiency. The 40% reduction in gate charge with IAUC41N06S5N102ATMA1 results in faster switching transitions and lower driver power consumption, beneficial for high-frequency applications.

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