IRFR4104TRLPBF N-Channel 40V 42A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR4104TRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 42A continuous drain current in the HEXFET® series. This device is packaged in TO-252AA (DPAK) surface mount configuration with a power dissipation rating of 140W at case temperature.

The IRFR4104TRLPBF carries a product status of "Not For New Designs," indicating that Infineon has discontinued this part for new applications. This status necessitates identification of equivalent and substitute components that maintain functional compatibility while offering active product support and continued availability.

Substiute Parts

IRFR4104TRLPBF
Infineon TechnologiesIn Stock: 3214IRFR4104TRLPBF Datasheet
IRFR4104TRLPBF
Current Part
IRFR4104TRPBF
Infineon TechnologiesIn Stock: 47481IRFR4104TRPBF Datasheet
IRFR4104TRPBF
Parametric Equivalent
AOD4184A
Alpha & Omega Semiconductor Inc.In Stock: 30480AOD4184A Datasheet
AOD4184A
MFR Recommended
SQD50N04-5M6_GE3
Vishay SiliconixIn Stock: 2423SQD50N04-5M6_GE3 Datasheet
SQD50N04-5M6_GE3
MFR Recommended
STD120N4F6
STMicroelectronicsIn Stock: 5701STD120N4F6 Datasheet
STD120N4F6
MFR Recommended
STD120N4LF6
STMicroelectronicsIn Stock: 1395STD120N4LF6 Datasheet
STD120N4LF6
MFR Recommended
STD150N3LLH6
STMicroelectronicsIn Stock: 10334STD150N3LLH6 Datasheet
STD150N3LLH6
MFR Recommended
STD95N4F3
STMicroelectronicsIn Stock: 20293STD95N4F3 Datasheet
STD95N4F3
MFR Recommended
STD95N4LF3
STMicroelectronicsIn Stock: 5262STD95N4LF3 Datasheet
STD95N4LF3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 42 A (Tc)
On-Resistance (Rds On) @ 42A, 10V 5.5 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 89 nC
Power Dissipation (Max) 140 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-252-3 (DPAK) Surface Mount
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRFR4104TRLPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
  • Continuous Drain Current (Id): Must equal or exceed 42A at case temperature
  • On-Resistance (Rds On): Must not significantly exceed 5.5 mOhm to maintain thermal performance
  • Package Type: Must be TO-252-3 (DPAK) surface mount for mechanical compatibility
  • Gate Drive Voltage: Must support 10V drive voltage operation
  • Operating Temperature Range: Must support -55°C to 175°C minimum

Substitution Categories:

Category 1: Parametric Equivalent (Identical Specifications) Parts with matching Vdss, Id, Rds On, and package that differ only in product status or packaging format (tape & reel variant).

Category 2: Functional Equivalent (Enhanced Performance) Parts with equal or higher Vdss and Id ratings, comparable or lower Rds On, same package, but with higher power dissipation capability or improved gate charge characteristics.

Category 3: Conditional Substitute (Trade-offs Required) Parts with matching Vdss and package but different Id or Rds On characteristics that require application-level verification.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ Tc (A) Rds On @ 10V (mOhm) Qg @ 10V (nC) Pd Max (W) Product Status Package
IRFR4104TRLPBF Infineon 40 42 5.5 89 140 Not For New Designs TO-252AA (DPAK)
IRFR4104TRPBF Infineon 40 42 5.5 89 140 Active TO-252AA (DPAK)
SQD50N04-5M6_GE3 Vishay Siliconix 40 50 5.6 85 71 Active TO-252AA (DPAK)
STD120N4F6 STMicroelectronics 40 80 4.0 65 110 Obsolete TO-252-3 (DPAK)
STD120N4LF6 STMicroelectronics 40 80 4.0 80 110 Active TO-252-3 (DPAK)
STD95N4F3 STMicroelectronics 40 80 6.5 54 110 Active TO-252-3 (DPAK)
STD95N4LF3 STMicroelectronics 40 80 6.0 70 110 Active TO-252-3 (DPAK)
AOD4184A Alpha & Omega Semiconductor 40 50 7.0 33 50 Not For New Designs TO-252 (DPAK)
STD150N3LLH6 STMicroelectronics 30 80 2.8 29 110 Obsolete TO-252-3 (DPAK)

Engineering Selection Recommendations

Primary Recommendation: IRFR4104TRPBF

The IRFR4104TRPBF is the direct parametric equivalent of the IRFR4104TRLPBF, differing only in packaging format (standard tape & reel versus the TR variant). This part maintains identical electrical specifications: 40V Vdss, 42A continuous drain current, 5.5 mOhm Rds On, and 140W power dissipation. The IRFR4104TRPBF carries Active product status from Infineon Technologies, ensuring continued manufacturing support and availability. Both parts are ROHS3 compliant with MSL 1 rating. This substitution requires no circuit redesign or thermal analysis modifications.

Secondary Recommendation: SQD50N04-5M6_GE3

The SQD50N04-5M6_GE3 from Vishay Siliconix is an active product offering enhanced current capability (50A versus 42A) while maintaining 40V Vdss and comparable Rds On (5.6 mOhm versus 5.5 mOhm). This part is AEC-Q101 qualified for automotive applications and carries Active product status. The gate charge is slightly lower (85 nC versus 89 nC), providing marginally improved switching characteristics. Power dissipation is rated at 71W, which is lower than the original 140W specification. This substitute is suitable for applications where the 42A current requirement is not at the absolute maximum design limit.

Tertiary Recommendation: STD120N4LF6

The STD120N4LF6 from STMicroelectronics is an Active product in the DeepGATE™ and STripFET™ VI series, rated for 80A continuous drain current at 40V Vdss. This part offers superior current handling and lower on-resistance (4.0 mOhm versus 5.5 mOhm), resulting in reduced power dissipation in high-current applications. The part is AEC-Q101 qualified and ROHS3 compliant. The higher current rating provides design margin for applications approaching the 42A limit of the original part. Gate charge is 80 nC, comparable to the original specification.

Alternative Consideration: STD95N4F3 and STD95N4LF3

Both STMicroelectronics STripFET™ III series parts (STD95N4F3 and STD95N4LF3) are Active products rated for 80A at 40V Vdss in TO-252-3 DPAK package. These parts provide enhanced current capability and are ROHS3 compliant. STD95N4F3 has Rds On of 6.5 mOhm with 54 nC gate charge, while STD95N4LF3 offers 6.0 mOhm Rds On with 70 nC gate charge. Both support dual gate drive voltages (5V and 10V for the LF variant). These options are suitable for applications requiring higher current margins with acceptable on-resistance trade-offs.

Not Recommended: STD150N3LLH6 and AOD4184A

The STD150N3LLH6 has a reduced Vdss rating of 30V, making it unsuitable for 40V applications. The AOD4184A, while rated for 40V, has a lower continuous drain current specification (13A at Ta, 50A at Tc) and higher Rds On (7.0 mOhm), and carries "Not For New Designs" status, offering no advantage over the primary recommendation.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace IRFR4104TRLPBF with IRFR4104TRPBF without any circuit modifications?

Yes. The IRFR4104TRPBF is a parametric equivalent with identical electrical specifications and the same TO-252AA (DPAK) package. The only difference is the packaging format (tape & reel variant designation). No circuit redesign, PCB layout changes, or thermal analysis modifications are required. Both parts are ROHS3 compliant with MSL 1 rating.

Q2: What is the key difference between the IRFR4104TRLPBF and SQD50N04-5M6_GE3?

The primary differences are: (1) SQD50N04-5M6_GE3 has higher continuous drain current (50A versus 42A), (2) slightly higher Rds On (5.6 mOhm versus 5.5 mOhm), (3) lower power dissipation rating (71W versus 140W), and (4) Active product status with AEC-Q101 automotive qualification. The SQD50N04-5M6_GE3 is suitable when higher current capability is beneficial, but the lower power dissipation rating must be verified against application thermal requirements.

Q3: Why do some substitute parts have higher current ratings (80A) than the original 42A specification?

Higher current ratings provide design margin and allow the same part to be used in applications with varying current requirements. Parts such as STD120N4LF6 and STD95N4F3 offer 80A capability while maintaining 40V Vdss and TO-252-3 DPAK package compatibility. The higher rating does not require circuit changes; it simply indicates the part can safely handle greater current if needed.

Q4: Is the TO-252-3 DPAK package identical to TO-252AA (DPAK)?

Both designations refer to the same physical package: a three-lead surface mount package with two leads plus a tab. The nomenclature varies by manufacturer (Infineon uses TO-252AA, STMicroelectronics uses TO-252-3), but the mechanical and electrical interfaces are identical. PCB footprints and thermal characteristics are compatible.

Q5: What does "Not For New Designs" product status mean?

"Not For New Designs" indicates that the manufacturer has discontinued the part for new applications and is transitioning customers to alternative products. Existing inventory may remain available, but long-term supply cannot be guaranteed. For new designs or redesigns, Active status parts such as IRFR4104TRPBF, SQD50N04-5M6_GE3, or STD120N4LF6 are recommended.

Q6: Can I use STD150N3LLH6 as a substitute?

No. The STD150N3LLH6 has a maximum Vdss rating of 30V, which is insufficient for applications requiring 40V operation. Using this part would result in device failure or reduced reliability. This part is not a valid substitute.

Q7: What is the significance of gate charge (Qg) differences between substitute parts?

Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (such as AOD4184A at 33 nC) results in faster switching but may require different gate drive circuit design. The original IRFR4104TRLPBF has 89 nC gate charge. Substitutes with similar gate charge (85-89 nC range) require minimal gate drive circuit modifications. Parts with significantly different gate charge may require gate driver optimization.

Q8: Are all substitute parts RoHS3 compliant?

Yes. All substitute parts listed in this document are ROHS3 compliant and have MSL 1 (Unlimited) moisture sensitivity level, matching the original IRFR4104TRLPBF specifications.

Q9: Which substitute offers the best thermal performance?

STD120N4LF6 offers the lowest on-resistance (4.0 mOhm versus 5.5 mOhm original), resulting in lower power dissipation at equivalent current levels. However, its power dissipation rating (110W) is lower than the original (140W). For applications operating near maximum current, thermal simulation is recommended to verify adequate heat dissipation with the selected substitute.

Q10: Can I mix different substitute parts in the same circuit board?

All listed substitutes are pin-compatible in TO-252-3 DPAK packages and support identical gate drive voltages (10V). However, mixing different part numbers in the same design is not recommended due to potential variations in on-resistance, gate charge, and thermal characteristics. Maintain consistency by using a single part number across all instances in a design.

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