IRFR3710ZPBF N-Channel 100V 42A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR3710ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 42A continuous drain current in a surface mount TO-252AA (DPAK) package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing production and design requirements. The HEXFET® series device delivers 140W maximum power dissipation and operates across the temperature range of -55°C to 175°C (TJ). Substitution is required to maintain supply chain continuity while meeting electrical and mechanical specifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	42	A (Tc)
On-State Resistance (Rds On) @ 33A, 10V	18	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	100	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFR3710ZPBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 100V
Continuous Drain Current (Id) must meet or exceed the application requirement (42A nominal)
On-State Resistance (Rds On) must be compatible with thermal and power dissipation budgets
Gate Threshold Voltage (Vgs(th)) and Gate Charge (Qg) affect switching performance and driver compatibility
Operating temperature range must span -55°C to 175°C (TJ)

Mechanical Compatibility Criteria:

Package type must be TO-252-3 (DPAK) for direct PCB footprint compatibility
Surface mount configuration required
Lead configuration: 2 Leads + Tab (SC-63)

Regulatory Compliance:

RoHS3 compliance required
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Unaffected status

The substitute parts listed below satisfy these criteria within the allowed parameter ranges for N-Channel MOSFET technology at 100V rating.

Parameter Comparison

Parameter	IRFR3710ZPBF	IPD35N10S3L26ATMA1	AOD2910	STD25NF10LT4	STD25NF10T4	STD45N10F7	STD70N10F4
Manufacturer	Infineon	Infineon	Alpha & Omega	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics
Vdss (V)	100	100	100	100	100	100	100
Id @ 25°C (A)	42	35	31 (Tc)	25	25	45	60
Rds On @ 10V (mOhm)	18 @ 33A	24 @ 35A	24 @ 20A	35 @ 12.5A	38 @ 12.5A	18 @ 22.5A	19.5 @ 30A
Vgs(th) (V)	4 @ 250µA	2.4 @ 39µA	2.7 @ 250µA	2.5 @ 250µA	4 @ 250µA	4.5 @ 250µA	4 @ 250µA
Qg @ 10V (nC)	100	39	25	52 @ 5V	55	25	85
Power Dissipation (W)	140	71	53.5 (Tc)	100	100	60	125
Package	TO-252-3 (DPAK)	PG-TO252-3-11	TO-252 (DPAK)	DPAK	DPAK	DPAK	DPAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitutes (Closest Electrical Match):

STD45N10F7 and STD70N10F4 provide the closest electrical performance to the IRFR3710ZPBF. Both devices maintain 100V Vdss rating, deliver continuous drain currents of 45A and 60A respectively, and feature on-state resistance values (18 mOhm and 19.5 mOhm) comparable to the original part. Both are manufactured by STMicroelectronics under the STripFET™ series, carry active product status, and are ROHS3 compliant. These parts are suitable for applications requiring current ratings at or above 42A.

Secondary Substitutes (Reduced Current Rating):

STD25NF10LT4 and STD25NF10T4 are active STMicroelectronics devices rated for 25A continuous drain current. These parts are appropriate for applications where the 42A rating of the original part exceeds system requirements. Both maintain 100V Vdss, DPAK packaging, and ROHS3 compliance. STD25NF10LT4 features lower on-state resistance (35 mOhm) compared to STD25NF10T4 (38 mOhm).

Alternative Manufacturer Option:

IPD35N10S3L26ATMA1 (Infineon OptiMOS™ series) delivers 35A continuous drain current at 100V with 24 mOhm on-state resistance. This part maintains Infineon manufacturing continuity and is actively produced. Gate charge of 39 nC is significantly lower than the original part, reducing switching losses in driver-limited applications.

Lower Current Alternative:

AOD2910 (Alpha & Omega Semiconductor) is rated for 31A (Tc) continuous drain current at 100V with 24 mOhm on-state resistance. This device is actively produced and ROHS3 compliant, offering an alternative source for applications tolerating reduced current ratings.

All substitute parts are surface mount TO-252-3 (DPAK) devices with MSL 1 (Unlimited) moisture sensitivity and REACH Unaffected status, ensuring compatibility with existing assembly processes and regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can STD25NF10LT4 or STD25NF10T4 directly replace IRFR3710ZPBF in all applications?

A: Direct replacement depends on application current requirements. These parts are rated for 25A continuous drain current, compared to 42A for the IRFR3710ZPBF. If the application draws less than 25A, substitution is valid. If sustained current exceeds 25A, STD45N10F7 or STD70N10F4 are required.

Q: What is the significance of the lower gate charge (Qg) in IPD35N10S3L26ATMA1?

A: IPD35N10S3L26ATMA1 has gate charge of 39 nC compared to 100 nC in IRFR3710ZPBF. Lower gate charge reduces switching time and driver power dissipation. This is beneficial in high-frequency switching applications but requires verification that the gate driver can accommodate the different threshold voltage (2.4V vs. 4V).

Q: Are all substitute parts available in the same DPAK package?

A: Yes. All listed substitutes use TO-252-3 (DPAK) surface mount packaging with 2 Leads + Tab configuration (SC-63). PCB footprints are mechanically compatible.

Q: What is the difference between STD25NF10LT4 and STD25NF10T4?

A: Both are STMicroelectronics STripFET™ II series devices rated for 25A at 100V in DPAK. Primary differences are on-state resistance (35 mOhm vs. 38 mOhm) and gate threshold voltage (2.5V vs. 4V). STD25NF10LT4 offers lower resistance and lower threshold voltage, while STD25NF10T4 matches the original part's 4V threshold voltage specification.

Q: Which substitute provides the best thermal performance?

A: STD70N10F4 delivers the highest power dissipation rating (125W) and lowest on-state resistance relative to current (19.5 mOhm @ 30A). This part is optimal for applications requiring maximum thermal headroom. STD45N10F7 provides 60W dissipation with 18 mOhm resistance, suitable for moderate thermal requirements.

Q: Are all substitutes RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status and REACH Unaffected designation, meeting current regulatory requirements for electronic component manufacturing and use.

Q: Can I use AOD2910 if my application requires 42A continuous current?

A: No. AOD2910 is rated for 31A (Tc) continuous drain current, which is below the 42A requirement. For 42A applications, use STD45N10F7 (45A) or STD70N10F4 (60A).

Q: What is the impact of different gate threshold voltages on circuit design?

A: Gate threshold voltage (Vgs(th)) determines the minimum gate-source voltage required to turn the device on. IRFR3710ZPBF specifies 4V, while IPD35N10S3L26ATMA1 specifies 2.4V. Lower threshold voltage allows operation with lower gate drive voltages but may increase susceptibility to parasitic turn-on. Gate driver compatibility must be verified for parts with significantly different threshold specifications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message