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IRFR3707PBF N-Channel 30V 61A MOSFET Equivalent & Substitute Parts
Part Overview
The IRFR3707PBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in the TO-252AA (DPAK) package. This device operates at 30V drain-to-source voltage with a continuous drain current rating of 61A at 25°C and maximum power dissipation of 87W. The part is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current (Id) @ 25°C | 61 | A (Tc) |
| On-Resistance (Rds On) @ 15A, 10V | 13 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 3 | V |
| Gate Charge (Qg) @ 4.5V | 19 | nC |
| Power Dissipation (Max) | 87 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-252-3 DPAK | - |
| Mounting Type | Surface Mount | - |
Substitute Part Grouping Explanation
Substitution eligibility for the IRFR3707PBF is determined by the following critical parameters:
Primary Matching Criteria:
- Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
- Package Type: Must be TO-252-3 DPAK (2 Leads + Tab) or SC-63 equivalent
- Mounting Type: Surface Mount
- Technology: N-Channel MOSFET (Metal Oxide)
- Operating Temperature Range: Must support -55°C to 175°C minimum
Secondary Compatibility Factors:
- Continuous Drain Current (Id): Substitute must support the application's current requirements
- On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
- Gate Charge (Qg): Affects switching speed and drive circuit requirements
- Power Dissipation: Must accommodate thermal design constraints
The four substitute parts listed below meet the primary matching criteria and are presented in order of electrical and operational compatibility with the IRFR3707PBF.
Parameter Comparison
| Parameter | IRFR3707PBF | IPD135N03LGATMA1 | BUK9214-30A,118 | DMN3016LK3-13 | FDD6690A |
|---|---|---|---|---|---|
| Manufacturer | Infineon | Infineon | Nexperia | Diodes Inc. | onsemi |
| Vdss (V) | 30 | 30 | 30 | 30 | 30 |
| Id @ 25°C (A) | 61 (Tc) | 30 (Tc) | 63 (Tc) | 12.4 (Ta) | 12 (Ta) / 46 (Tc) |
| Rds On (mOhm) | 13 @ 15A, 10V | 13.5 @ 30A, 10V | 12 @ 25A, 10V | 12 @ 11A, 10V | 12 @ 12A, 10V |
| Vgs(th) (V) | 3 @ 250µA | 2.2 @ 250µA | 2 @ 1mA | 2.3 @ 250µA | 3 @ 250µA |
| Qg (nC) | 19 @ 4.5V | 10 @ 10V | 31 @ 5V | 25.1 @ 10V | 18 @ 5V |
| Power Dissipation (W) | 87 (Tc) | 31 (Tc) | 107 (Tc) | 1.6 (Ta) | 3.3 (Ta) / 56 (Tc) |
| Operating Temp (°C) | -55 to 175 | -55 to 175 | -55 to 175 | -55 to 150 | -55 to 175 |
| Package | TO-252-3 DPAK | PG-TO252-3 | DPAK | TO-252-3 | TO-252AA |
| Product Status | Obsolete | Active | Obsolete | Active | Obsolete |
| RoHS Status | - | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IPD135N03LGATMA1 (Infineon OptiMOS™ Series)
This substitute is recommended as the primary alternative for applications where the IRFR3707PBF is no longer available. The IPD135N03LGATMA1 maintains identical voltage rating (30V) and package configuration (TO-252-3 DPAK). Product status is Active, ensuring long-term availability and supply chain stability. RoHS3 compliance supports modern manufacturing and environmental standards. The continuous drain current of 30A is lower than the original 61A specification; this substitute is suitable only for applications requiring 30A or less. Gate charge is reduced to 10nC, improving switching efficiency. Operating temperature range matches the original (-55°C to 175°C).
BUK9214-30A,118 (Nexperia TrenchMOS™ Series)
This substitute provides the closest current rating match at 63A continuous drain current, exceeding the original 61A specification. Voltage rating and package type are identical (30V, TO-252-3 DPAK). Power dissipation capability is higher at 107W, supporting thermal-intensive applications. The part carries AEC-Q101 automotive qualification and RoHS3 compliance. Product status is Obsolete; however, inventory availability is confirmed at 18,285 pieces. Gate charge is elevated at 31nC, requiring verification of drive circuit compatibility. Maximum gate voltage is limited to ±15V compared to the original ±20V specification.
DMN3016LK3-13 (Diodes Incorporated)
This substitute is suitable only for low-current applications requiring 12.4A or less. Voltage rating and package type match the original (30V, TO-252-3 DPAK). Product status is Active, ensuring availability. RoHS3 compliance is confirmed. Operating temperature range is reduced to -55°C to 150°C, which is 25°C lower than the original maximum. Power dissipation is significantly reduced at 1.6W (Ta), limiting thermal capability. This part is not recommended for applications requiring the full 61A current capacity of the IRFR3707PBF.
FDD6690A (onsemi PowerTrench® Series)
This substitute offers dual current ratings: 12A (Ta) and 46A (Tc), with corresponding power dissipation of 3.3W (Ta) and 56W (Tc). Voltage rating and package type are identical (30V, TO-252AA). RoHS3 compliance is confirmed. Product status is Obsolete. The 46A (Tc) rating approaches but does not fully match the original 61A specification. This part is suitable for applications requiring 46A or less. Operating temperature range matches the original (-55°C to 175°C).
Frequently Asked Questions (FAQ)
Q: Can the IPD135N03LGATMA1 directly replace the IRFR3707PBF in all applications?
A: No. The IPD135N03LGATMA1 has a maximum continuous drain current of 30A, compared to the IRFR3707PBF's 61A. Direct substitution is only valid for applications requiring 30A or less. Applications requiring higher current must use BUK9214-30A,118 or FDD6690A.
Q: What is the significance of the different temperature measurement conditions (Tc vs. Ta)?
A: Tc indicates measurement at the junction temperature under specified thermal conditions, while Ta indicates measurement at ambient temperature. Specifications using Tc typically represent more conservative thermal performance. When comparing current ratings, verify which measurement condition applies to your thermal design.
Q: Are all substitute parts available in the same package?
A: All substitute parts use TO-252-3 DPAK or equivalent packages (PG-TO252-3, TO-252AA, SC-63). These are mechanically and electrically compatible for PCB mounting. Verify footprint compatibility with your design before implementation.
Q: Which substitute has the best long-term availability?
A: IPD135N03LGATMA1 and DMN3016LK3-13 have Active product status, ensuring continued manufacturing and supply. BUK9214-30A,118 and FDD6690A are Obsolete but currently have confirmed inventory. For new designs, prioritize Active status parts.
Q: How do gate charge differences affect circuit design?
A: Gate charge (Qg) determines the energy required to switch the MOSFET. Lower Qg (IPD135N03LGATMA1 at 10nC) reduces drive circuit power consumption and enables faster switching. Higher Qg (BUK9214-30A,118 at 31nC) requires more drive current but may improve EMI characteristics. Verify your gate driver can supply the required charge for your selected substitute.
Q: What is the impact of different Rds On values?
A: On-resistance directly affects power dissipation and heat generation. Lower Rds On values reduce conduction losses. All substitutes maintain Rds On between 12-13.5mOhm, ensuring comparable thermal performance within their respective current ratings.
Q: Can I use FDD6690A for applications requiring 61A continuous current?
A: No. FDD6690A's maximum continuous drain current is 46A (Tc), which is insufficient for 61A applications. Use BUK9214-30A,118 (63A) for full current capacity matching.
Q: Are there compliance or certification differences between substitutes?
A: BUK9214-30A,118 carries AEC-Q101 automotive qualification. All substitutes are RoHS3 compliant and REACH unaffected. Verify your application's specific compliance requirements before selection.
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