IRFR3504PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR3504PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 30A continuous drain current in the DPAK (TO-252-3) surface mount package. This device is classified as Obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. The HEXFET® series component operates across a temperature range of -55°C to 175°C and dissipates up to 140W at the case temperature.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	30	A (Tc)
On-State Resistance (Rds On) @ 30A, 10V	9.2	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	71	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRFR3504PBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute must support a minimum Vdss of 40V to maintain voltage margin in the original application circuit.

Current Handling: The substitute must support continuous drain current (Id) at or above 30A at 25°C case temperature to ensure thermal and electrical performance equivalence.

On-State Resistance (Rds On): Lower Rds On values indicate improved efficiency and reduced power dissipation. Substitutes with Rds On at or below 9.2 mOhm @ 10V gate drive maintain or improve performance.

Package and Mounting: All substitutes must use the TO-252-3 (DPAK) surface mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts.

Gate Drive Voltage: Substitutes must operate with standard 10V gate drive voltage to maintain compatibility with existing gate driver circuits.

Temperature Range: Operating temperature range of -55°C to 175°C must be maintained for thermal design equivalence.

Substitutes are grouped into two categories: Direct Replacements (matching or exceeding all key parameters with active product status) and Performance Alternatives (meeting voltage and current requirements with different electrical characteristics or obsolete status).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Temp Range (°C)	Package	Status
IRFR3504PBF	Infineon	40	30	9.2	71	140	-55 to 175	TO-252-3	Obsolete
IPD50N03S2L06ATMA1	Infineon	30	50	6.4	68	136	-55 to 175	TO-252-3	Active
DMNH4011SK3-13	Diodes Inc.	40	50	10	25.5	2.6	-55 to 175	TO-252-3	Active
FDD8447L	Fairchild	40	50	8.5	52	44	-55 to 150	TO-252-3	Active
STD100N3LF3	STMicroelectronics	30	80	5.5	27	110	-55 to 175	TO-252-3	Obsolete
STD64N4F6AG	STMicroelectronics	40	54	8.2	44	60	-55 to 175	TO-252-3	Active
STD65N55F3	STMicroelectronics	55	80	8.5	45	110	-55 to 175	TO-252-3	Active
STD80N4F6	STMicroelectronics	40	80	6	36	70	-55 to 175	TO-252-3	Active
STD95N4F3	STMicroelectronics	40	80	6.5	54	110	-55 to 175	TO-252-3	Active
STD95N4LF3	STMicroelectronics	40	80	6	70	110	-55 to 175	TO-252-3	Active

Engineering Selection Recommendations

Primary Recommendation: STD80N4F6 (STMicroelectronics)

The STD80N4F6 is an Active product with 40V Vdss matching the original specification, 80A continuous drain current exceeding the 30A requirement, and 6 mOhm Rds On providing improved efficiency. The device maintains the full -55°C to 175°C operating temperature range and is qualified to AEC-Q101 automotive standards with RoHS3 compliance. The TO-252-3 package ensures direct mechanical compatibility.

Secondary Recommendation: STD64N4F6AG (STMicroelectronics)

The STD64N4F6AG provides 40V Vdss, 54A continuous drain current, and 8.2 mOhm Rds On. This Active product carries AEC-Q101 qualification and RoHS3 compliance with identical temperature range and package specifications. Gate charge of 44 nC is lower than the original, reducing switching losses.

Alternative for Lower Voltage Applications: IPD50N03S2L06ATMA1 (Infineon)

The IPD50N03S2L06ATMA1 is an Active Infineon OptiMOS™ device with 30V Vdss, 50A continuous drain current, and 6.4 mOhm Rds On. This substitute is suitable only for applications where the circuit voltage does not exceed 30V. The device includes AEC-Q101 qualification and RoHS3 compliance.

Higher Voltage Alternative: STD65N55F3 (STMicroelectronics)

The STD65N55F3 provides 55V Vdss for applications requiring additional voltage margin, 80A continuous drain current, and 8.5 mOhm Rds On. This Active product maintains full temperature range and RoHS3 compliance, suitable for circuits operating below 55V.

Compliance Considerations:

All recommended Active substitutes are RoHS3 compliant and REACH unaffected. STD80N4F6, STD64N4F6AG, and STD80N4F6 carry AEC-Q101 automotive qualification, suitable for automotive and industrial applications requiring qualification documentation.

Frequently Asked Questions (FAQ)

Q: Can I use IPD50N03S2L06ATMA1 as a direct replacement for IRFR3504PBF?

A: IPD50N03S2L06ATMA1 is suitable only if your circuit operates at 30V or below. The original IRFR3504PBF is rated for 40V. Using a 30V device in a 40V circuit exceeds the device voltage rating and creates reliability risk.

Q: What is the difference between STD80N4F6 and STD95N4F3?

A: Both devices support 40V Vdss and 80A continuous drain current in TO-252-3 packages. STD80N4F6 has 6 mOhm Rds On and 36 nC gate charge, while STD95N4F3 has 6.5 mOhm Rds On and 54 nC gate charge. STD80N4F6 provides lower on-state resistance and faster switching.

Q: Why is FDD8447L listed as a substitute if it has a lower maximum operating temperature?

A: FDD8447L operates to 150°C maximum junction temperature versus 175°C for the original. This device is suitable for applications where the junction temperature remains below 150°C. Verify thermal design margins before selection.

Q: Are all substitute parts available in the same packaging?

A: Yes. All listed substitutes use the TO-252-3 (DPAK) surface mount package with identical pinout and thermal interface, ensuring direct PCB compatibility without layout modification.

Q: What does AEC-Q101 qualification mean for component selection?

A: AEC-Q101 is an automotive industry qualification standard. Devices carrying this qualification have undergone stress testing and reliability validation for automotive applications. STD80N4F6, STD64N4F6AG, and STD80N4F6 meet this standard.

Q: Can I use a substitute with lower Rds On than the original?

A: Yes. Lower on-state resistance reduces power dissipation and heat generation, improving efficiency. Verify that your gate driver can supply the required gate charge without exceeding voltage or current limits.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver power consumption. Lower gate charge (25.5 nC for DMNH4011SK3-13) enables faster switching but may require different driver timing. Higher gate charge (71 nC for original) requires more driver current but provides more stable switching characteristics.

Q: Is RoHS3 compliance required for my application?

A: RoHS3 compliance is mandatory for products sold in the European Union and many other markets. All Active substitutes listed are RoHS3 compliant. Verify your regional requirements before final component selection.

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