IRFR3410PBF N-Channel 100V 31A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR3410PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 31A continuous drain current at 25°C. The device is housed in a TO-252-3 (DPAK) surface mount package and is classified as discontinued at DiGi Electronics. This part is part of the HEXFET® series and operates across a temperature range of -55°C to 175°C (TJ). Due to its discontinued status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and component sourcing flexibility.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	31	A (Tc)
On-State Resistance (Rds On) @ 18A, 10V	39	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	56	nC
Input Capacitance (Ciss) @ 25V	1690	pF
Power Dissipation (Max)	3 (Ta), 110 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRFR3410PBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 25A or greater at 25°C (Tc)
Package Type: TO-252-3 (DPAK) or compatible surface mount packages
Operating Temperature Range: -55°C to 175°C (TJ) or equivalent
Gate Voltage Rating (Vgs Max): ±20V or greater
RoHS3 Compliance and MSL Level 1 (Unlimited)

Acceptable Variation Ranges:

On-State Resistance (Rds On): Substitute parts may have lower Rds On values (improved performance) but must not exceed the original specification by more than 50% at equivalent test conditions
Gate Charge (Qg): Substitute parts with lower gate charge values are acceptable
Input Capacitance (Ciss): Variation acceptable within ±30% of original specification
Power Dissipation: Substitute parts with equal or higher power dissipation ratings are acceptable

Substitute parts are grouped into two categories: Direct Package Equivalents (TO-252-3 DPAK) and Alternative Package Options (D2PAK and CPT3), which maintain electrical compatibility while offering different thermal and mechanical characteristics.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Package	Status
IRFR3410PBF	Infineon	100	31 (Tc)	39 @ 18A, 10V	4 @ 250µA	56 @ 10V	1690 @ 25V	3 (Ta), 110 (Tc)	TO-252-3	Discontinued
IPD30N10S3L34ATMA1	Infineon	100	30 (Tc)	31 @ 30A, 10V	2.4 @ 29µA	31 @ 10V	1976 @ 25V	57 (Tc)	TO-252-3	Active
IPD35N10S3L26ATMA1	Infineon	100	35 (Tc)	24 @ 35A, 10V	2.4 @ 39µA	39 @ 10V	2700 @ 25V	71 (Tc)	TO-252-3	Active
AOD482	Alpha & Omega	100	5 (Ta), 32 (Tc)	37 @ 10A, 10V	2.7 @ 250µA	44 @ 10V	2000 @ 50V	2.5 (Ta), 100 (Tc)	TO-252	Active
DMNH10H028SK3-13	Diodes Inc.	100	55 (Tc)	28 @ 20A, 10V	3.3 @ 250µA	36 @ 10V	2245 @ 50V	2 (Ta)	TO-252-3	Active
PSMN034-100BS,118	Nexperia	100	32 (Tc)	34.5 @ 15A, 10V	4 @ 1mA	23.8 @ 10V	1201 @ 50V	86 (Tc)	D2PAK	Active
RSD201N10TL	Rohm	100	20 (Tc)	46 @ 20A, 10V	2.5 @ 1mA	55 @ 10V	2100 @ 25V	0.85 (Ta), 20 (Tc)	TO-252-3	Active
STD15NF10T4	STMicroelectronics	100	23 (Tc)	65 @ 12A, 10V	4 @ 250µA	40 @ 10V	870 @ 25V	70 (Tc)	TO-252-3	Active
STD20NF10T4	STMicroelectronics	100	25 (Tc)	45 @ 15A, 10V	4 @ 250µA	55 @ 10V	1200 @ 25V	85 (Tc)	TO-252-3	Active
STD25N10F7	STMicroelectronics	100	25 (Tc)	35 @ 12.5A, 10V	4.5 @ 250µA	14 @ 10V	920 @ 50V	40 (Tc)	TO-252-3	Active
STD25NF10LT4	STMicroelectronics	100	25 (Tc)	35 @ 12.5A, 10V	2.5 @ 250µA	52 @ 5V	1710 @ 25V	100 (Tc)	TO-252-3	Active

Engineering Selection Recommendations

Primary Substitutes (Direct TO-252-3 DPAK Equivalents):

The following parts are recommended as primary substitutes based on active product status, full RoHS3 compliance, MSL Level 1 rating, and electrical parameter alignment:

IPD30N10S3L34ATMA1 (Infineon OptiMOS™): Rated for 30A continuous drain current with 31mOhm Rds On at 10V. Offers improved gate charge characteristics (31nC vs. 56nC) and lower threshold voltage (2.4V vs. 4V). Suitable for applications requiring lower gate drive power. Active status with 20,100 units in stock.
IPD35N10S3L26ATMA1 (Infineon OptiMOS™): Rated for 35A continuous drain current with 24mOhm Rds On at 10V. Provides superior current handling and reduced on-state losses. Lower gate charge (39nC) and threshold voltage (2.4V) enable faster switching. Active status with 8,550 units in stock.
STD25NF10LT4 (STMicroelectronics STripFET™ II): Rated for 25A continuous drain current with 35mOhm Rds On at 10V. Offers 100W power dissipation (Tc) matching the original specification. Lower threshold voltage (2.5V) and high inventory availability (688,200 units). Recommended for high-volume applications.
STD20NF10T4 (STMicroelectronics STripFET™ II): Rated for 25A continuous drain current with 45mOhm Rds On at 10V. Provides 85W power dissipation (Tc) with active status and 10,102 units in stock.

Secondary Substitutes (Enhanced Current Capability):

DMNH10H028SK3-13 (Diodes Incorporated): Rated for 55A continuous drain current with 28mOhm Rds On at 10V. Exceeds original current specification significantly. Suitable for applications requiring higher current margins or thermal headroom. Active status with 12,700 units in stock.
AOD482 (Alpha & Omega Semiconductor): Rated for 32A continuous drain current (Tc) with 37mOhm Rds On at 10V. Provides 100W power dissipation (Tc) matching the original. Active status with 51,420 units in stock.

Alternative Package Option:

PSMN034-100BS,118 (Nexperia): Rated for 32A continuous drain current with 34.5mOhm Rds On at 10V. Housed in D2PAK package offering improved thermal performance (86W Tc). Suitable for applications where enhanced heat dissipation is required. Active status with 5,520 units in stock.

Lower Current Alternative:

RSD201N10TL (Rohm Semiconductor): Rated for 20A continuous drain current with 46mOhm Rds On at 10V. Suitable only for applications where 20A current is sufficient. Active status with 6,198 units in stock.

All recommended substitutes maintain 100V Vdss rating, -55°C to 175°C operating temperature range, ±20V gate voltage rating, RoHS3 compliance, and MSL Level 1 moisture sensitivity level.

Frequently Asked Questions (FAQ)

Q1: Can I use IPD35N10S3L26ATMA1 as a direct replacement for IRFR3410PBF?

A: Yes. Both devices are rated for 100V Vdss, operate across -55°C to 175°C, use TO-252-3 DPAK packaging, and meet RoHS3 compliance. The IPD35N10S3L26ATMA1 provides 35A continuous drain current versus 31A, with lower on-state resistance (24mOhm vs. 39mOhm) and reduced gate charge (39nC vs. 56nC). These characteristics represent improved performance in the same package footprint.

Q2: What is the difference between TO-252-3 DPAK and D2PAK packages?

A: Both are surface mount packages with identical electrical pin configurations and footprints suitable for PCB mounting. D2PAK (TO-263-3) provides enhanced thermal performance through a larger tab area, enabling higher power dissipation ratings. PSMN034-100BS,118 in D2PAK format dissipates 86W (Tc) compared to typical DPAK devices at 70-110W (Tc). D2PAK is recommended when thermal management is critical.

Q3: Why do some substitute parts have lower gate charge specifications?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. Lower gate charge values (e.g., 31nC in IPD30N10S3L34ATMA1 vs. 56nC in IRFR3410PBF) indicate faster switching speed and reduced gate drive power requirements. This is an improvement over the original specification and does not affect compatibility.

Q4: Is STD25NF10LT4 suitable for my application if I need 31A continuous current?

A: STD25NF10LT4 is rated for 25A continuous drain current, which is below the original 31A specification. Use this part only if your actual application current requirement is 25A or less. For applications requiring 31A or higher, select IPD30N10S3L34ATMA1 (30A), IPD35N10S3L26ATMA1 (35A), AOD482 (32A), or DMNH10H028SK3-13 (55A).

Q5: Can I use DMNH10H028SK3-13 rated for 55A in place of IRFR3410PBF rated for 31A?

A: Yes. DMNH10H028SK3-13 meets all critical electrical parameters (100V Vdss, -55°C to 175°C operation, TO-252-3 package, RoHS3 compliance). The higher current rating (55A vs. 31A) provides additional design margin and thermal headroom. On-state resistance is lower (28mOhm vs. 39mOhm), reducing power dissipation. This substitution is valid for any application using IRFR3410PBF.

Q6: What does "Active" product status mean versus "Discontinued"?

A: Active status indicates the manufacturer continues production and supports the part through normal distribution channels. Discontinued status means the manufacturer no longer produces the part, making it unavailable for new orders. All recommended substitutes carry Active status, ensuring long-term availability and supply chain reliability.

Q7: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this document are RoHS3 compliant and carry MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original IRFR3410PBF specifications. This ensures compatibility with modern manufacturing processes and environmental regulations.

Q8: Which substitute offers the best on-state resistance performance?

A: DMNH10H028SK3-13 provides the lowest on-state resistance at 28mOhm (@ 20A, 10V), followed by IPD35N10S3L26ATMA1 at 24mOhm (@ 35A, 10V). Lower Rds On reduces conduction losses and heat generation, improving overall circuit efficiency. Selection depends on your specific current and thermal requirements.

Q9: Can I use RSD201N10TL if my circuit only requires 20A?

A: Yes, if your actual continuous drain current requirement is 20A or less. RSD201N10TL is rated for 20A (Tc) with 46mOhm Rds On at 10V. However, this part provides no current margin above your requirement. For applications with potential current transients or future design flexibility, select a higher-rated substitute such as STD25NF10LT4 (25A) or IPD30N10S3L34ATMA1 (30A).

Q10: What is the significance of threshold voltage (Vgs(th)) differences between parts?

A: Gate threshold voltage determines the minimum gate-source voltage required to turn the MOSFET on. Original IRFR3410PBF has Vgs(th) of 4V, while substitutes range from 2.4V to 4.5V. Lower threshold voltages (2.4V-2.5V) enable operation with lower gate drive voltages, reducing power consumption in gate drive circuits. Higher threshold voltages (4.5V) provide greater noise immunity. Selection depends on your gate drive circuit design.

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