IRFR320PBF Equivalent & Substitute Parts

Part Overview

The IRFR320PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 400V drain-to-source voltage with 3.1A continuous drain current at 25°C. This device is housed in a DPAK (TO-252-3) surface mount package and is designed for general-purpose switching applications requiring moderate voltage and current ratings. The part is Active status and RoHS3 compliant with unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance can be achieved within the specified parameter ranges while maintaining the same package type and mounting technology. Alternative models may be required due to inventory availability, supply chain considerations, or design optimization for specific application requirements.

Substiute Parts

IRFR320PBF

Vishay SiliconixIn Stock: 5344IRFR320PBF Datasheet

Current PartRFQ

STD5NK40ZT4

STMicroelectronicsIn Stock: 17956STD5NK40ZT4 Datasheet

MFR RecommendedRFQ

STD7NK40ZT4

STMicroelectronicsIn Stock: 35107STD7NK40ZT4 Datasheet

MFR RecommendedRFQ

TK5P50D(T6RSS-Q)

Toshiba Semiconductor and StorageIn Stock: 5407TK5P50D(T6RSS-Q) Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRFR320PBF is determined by the following critical parameters:

Primary Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must be equal to or greater than 400V
• Package Type: Must be DPAK (TO-252-3) surface mount configuration
• Mounting Technology: Surface mount compatibility required
• FET Type: N-Channel MOSFET technology
• Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): Acceptable at equal or higher ratings
• On-State Resistance (Rds On): Lower or equal values maintain performance
• Gate Charge (Qg): Lower values reduce switching losses
• Input Capacitance (Ciss): Lower values improve switching speed
• Power Dissipation: Higher ratings provide design margin

Compliance Requirements:

• RoHS3 compliance mandatory
• MSL 1 (Unlimited) moisture sensitivity level
• Active product status preferred

The three substitute parts listed (STD5NK40ZT4, STD7NK40ZT4, and TK5P50D(T6RSS-Q)) meet these primary criteria while offering variations in current handling and power dissipation capabilities.

Parameter Comparison

Engineering Selection Recommendations

STD5NK40ZT4 (STMicroelectronics)

The STD5NK40ZT4 provides direct electrical equivalence to the IRFR320PBF with matching 400V Vdss and comparable 3A continuous drain current. This part features identical 1.8Ω on-state resistance at 10V drive voltage and lower gate charge (17nC versus 20nC), resulting in reduced switching losses. The STMicroelectronics SuperMESH™ series technology offers enhanced thermal performance with 45W power dissipation capability. All compliance requirements are met: ROHS3 compliant, MSL 1, and Active product status. This substitute is suitable for direct replacement in applications where current requirements do not exceed 3A.

STD7NK40ZT4 (STMicroelectronics)

The STD7NK40ZT4 maintains 400V Vdss rating while providing increased current handling at 5.4A continuous drain current. This device offers superior on-state resistance performance (1Ω at 2.7A, 10V) and significantly higher power dissipation capability (70W), making it suitable for applications requiring higher current throughput or thermal margin. Gate charge increases to 26nC, reflecting the larger die size. ROHS3 compliance, MSL 1, and Active status are confirmed. This substitute is appropriate when design requirements exceed the 3.1A rating of the IRFR320PBF.

TK5P50D(T6RSS-Q) (Toshiba Semiconductor)

The TK5P50D(T6RSS-Q) provides elevated voltage rating at 500V Vdss, exceeding the IRFR320PBF specification by 100V. Continuous drain current is rated at 5A, with on-state resistance of 1.5Ω at 2.5A, 10V. This device features the lowest gate charge (11nC) among the substitutes, enabling fastest switching performance. Power dissipation reaches 80W, providing maximum thermal headroom. All compliance criteria are satisfied: ROHS3 compliant, MSL 1, and Active status. This substitute is selected when higher voltage margin or enhanced switching speed is required.

Selection Basis:

All three substitute parts maintain DPAK surface mount packaging, N-Channel MOSFET technology, and full compliance with RoHS3 and MSL 1 requirements. Product status is Active for all candidates. Selection between substitutes depends on specific application requirements for current capacity, voltage margin, and thermal performance rather than fundamental compatibility constraints.

Frequently Asked Questions (FAQ)

Q: Can STD5NK40ZT4 be used as a direct replacement for IRFR320PBF?

A: Yes. The STD5NK40ZT4 maintains identical 400V Vdss rating and comparable 3A continuous drain current with matching 1.8Ω on-state resistance. Both devices use DPAK surface mount packaging and meet all compliance requirements. The primary difference is lower gate charge (17nC versus 20nC), which reduces switching losses without affecting functional compatibility.

Q: What is the difference between STD5NK40ZT4 and STD7NK40ZT4?

A: Both devices are STMicroelectronics SuperMESH™ series MOSFETs with 400V Vdss rating. The STD7NK40ZT4 provides higher continuous drain current (5.4A versus 3A) and superior on-state resistance (1Ω versus 1.8Ω). The STD7NK40ZT4 is selected when applications require current handling beyond 3.1A or when lower on-state resistance reduces power dissipation.

Q: Why does TK5P50D(T6RSS-Q) have 500V Vdss instead of 400V?

A: The TK5P50D(T6RSS-Q) is rated for 500V Vdss, which exceeds the IRFR320PBF specification. This higher voltage rating provides additional design margin in applications subject to voltage transients or overshoot conditions. The device remains functionally compatible in 400V applications while offering enhanced voltage headroom.

Q: Are all substitute parts available in the same packaging?

A: Yes. All substitute parts use DPAK (TO-252-3) surface mount packaging with identical pinout configuration. This ensures mechanical and electrical compatibility with existing PCB layouts designed for the IRFR320PBF.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are RoHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity level rating. All devices maintain Active product status. These certifications ensure compatibility with current manufacturing and environmental standards.

Q: How does gate charge affect device selection?

A: Gate charge (Qg) determines the energy required to switch the device on and off. Lower gate charge reduces switching losses and enables faster switching transitions. The STD5NK40ZT4 (17nC) and TK5P50D(T6RSS-Q) (11nC) offer lower gate charge than the IRFR320PBF (20nC), improving efficiency in high-frequency switching applications.

Q: Can these devices be used interchangeably in existing designs?

A: Interchangeability depends on specific application requirements. All three substitutes maintain DPAK packaging and N-Channel MOSFET technology. However, differences in current rating, on-state resistance, and power dissipation must be evaluated against circuit design specifications. Devices with higher current or power ratings can replace lower-rated parts; the reverse is not applicable.

Q: What is the operating temperature range for all parts?

A: All parts support -55°C to 150°C junction temperature (TJ) operating range, ensuring compatibility across industrial and commercial temperature specifications.