IRFR320 N-Channel MOSFET 400V 3.1A DPAK Equivalent & Substitute Parts

Part Overview

The IRFR320 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 400V drain-to-source voltage with a continuous drain current of 3.1A at 25°C. The device is housed in a Surface Mount DPAK package (TO-252-3) and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The IRFR320 is classified as Obsolete. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Substiute Parts

IRFR320
Vishay SiliconixIn Stock: 7026IRFR320 Datasheet
IRFR320
Current Part
IRFR320PBF
Vishay SiliconixIn Stock: 5344IRFR320PBF Datasheet
IRFR320PBF
Parametric Equivalent
STD5NK40ZT4
STMicroelectronicsIn Stock: 17956STD5NK40ZT4 Datasheet
STD5NK40ZT4
MFR Recommended
STD7NK40ZT4
STMicroelectronicsIn Stock: 35107STD7NK40ZT4 Datasheet
STD7NK40ZT4
MFR Recommended
TK5P53D(T6RSS-Q)
Toshiba Semiconductor and StorageIn Stock: 1811TK5P53D(T6RSS-Q) Datasheet
TK5P53D(T6RSS-Q)
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Continuous Drain Current (Id) @ 25°C 3.1 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.8 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25V
Power Dissipation (Max) 2.5 (Ta), 42 (Tc) W
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Product Status Obsolete

Substitute Part Grouping Explanation

Substitute parts for the IRFR320 are identified based on strict electrical and mechanical compatibility criteria. The following parameters define substitution eligibility:

Primary Compatibility Criteria:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V or greater
  • Continuous Drain Current (Id): 3.1A or greater at 25°C
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Mounting Type: Surface Mount

Secondary Compatibility Parameters:

  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm or less
  • Vgs (Max): ±20V or greater
  • Operating Temperature: -55°C to 150°C or greater

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications with different product status or packaging) and Manufacturer Recommended Substitutes (parts with enhanced or equivalent performance characteristics that meet or exceed the original specifications).

Parameter Comparison

Parameter IRFR320 IRFR320PBF STD5NK40ZT4 STD7NK40ZT4 TK5P53D(T6RSS-Q)
Manufacturer Vishay Siliconix Vishay Siliconix STMicroelectronics STMicroelectronics Toshiba Semiconductor and Storage
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 400V 400V 400V 400V 525V
Continuous Drain Current (Id) @ 25°C 3.1A (Tc) 3.1A (Tc) 3A (Tc) 5.4A (Tc) 5A (Ta)
Rds On (Max) @ Id, Vgs 1.8Ω @ 1.9A, 10V 1.8Ω @ 1.9A, 10V 1.8Ω @ 1.5A, 10V 1Ω @ 2.7A, 10V 1.5Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4.5V @ 50µA 4.5V @ 50µA 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V 20nC @ 10V 17nC @ 10V 26nC @ 10V 11nC @ 10V
Vgs (Max) ±20V ±20V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V 350pF @ 25V 305pF @ 25V 535pF @ 25V 540pF @ 25V
Power Dissipation (Max) 2.5W (Ta), 42W (Tc) 2.5W (Ta), 42W (Tc) 45W (Tc) 70W (Tc) 80W (Tc)
Operating Temperature -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ) -55 to 150°C (TJ) 150°C (TJ)
Package / Case TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK TO-252-3, DPAK
Product Status Obsolete Active Active Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IRFR320PBF (Vishay Siliconix)

The IRFR320PBF is a parametric equivalent to the IRFR320, offering identical electrical specifications with the same 400V Vdss rating, 3.1A continuous drain current, and 1.8Ω maximum on-resistance. The primary distinction is product status: IRFR320PBF is Active, whereas the original IRFR320 is Obsolete. IRFR320PBF is ROHS3 Compliant and REACH Affected, providing improved environmental compliance. Packaging is supplied in Tube format. This part is the direct replacement for the IRFR320 when supply continuity is required.

STD5NK40ZT4 (STMicroelectronics)

The STD5NK40ZT4 is a manufacturer-recommended substitute with 400V Vdss and 3A continuous drain current, meeting the minimum current requirement. The device features 1.8Ω maximum on-resistance at 1.5A and 10V gate-source voltage. Key advantages include Active product status, ROHS3 Compliance, and higher gate voltage rating (±30V versus ±20V). The STD5NK40ZT4 is part of the SuperMESH™ series and offers improved thermal performance with 45W maximum power dissipation at case temperature. This part is suitable for applications where the 3A current rating is sufficient and enhanced voltage margin is beneficial.

STD7NK40ZT4 (STMicroelectronics)

The STD7NK40ZT4 is a manufacturer-recommended substitute with enhanced current-handling capability. It maintains the 400V Vdss rating while providing 5.4A continuous drain current, exceeding the original 3.1A specification. The device features superior on-resistance of 1Ω at 2.7A and 10V gate-source voltage. STD7NK40ZT4 is Active, ROHS3 Compliant, and rated for 70W maximum power dissipation at case temperature. This part is appropriate for applications requiring higher current capacity or improved thermal performance within the same voltage class.

TK5P53D(T6RSS-Q) (Toshiba Semiconductor and Storage)

The TK5P53D(T6RSS-Q) is a manufacturer-recommended substitute with elevated voltage rating of 525V Vdss, providing additional voltage margin above the original 400V specification. The device delivers 5A continuous drain current and features 1.5Ω on-resistance at 2.5A and 10V gate-source voltage. TK5P53D(T6RSS-Q) is Active, ROHS3 Compliant, and rated for 80W maximum power dissipation at case temperature. This part is suitable for applications requiring higher voltage headroom or enhanced thermal performance. Operating temperature specification is limited to 150°C maximum junction temperature.

Frequently Asked Questions (FAQ)

Q: Can the IRFR320PBF be used as a direct replacement for the IRFR320?

A: Yes. The IRFR320PBF is a parametric equivalent with identical electrical specifications: 400V Vdss, 3.1A continuous drain current, 1.8Ω on-resistance, and TO-252-3 DPAK package. The primary difference is product status (Active versus Obsolete) and improved RoHS compliance. IRFR320PBF is supplied in Tube packaging rather than the original format.

Q: What is the key difference between the STD5NK40ZT4 and STD7NK40ZT4?

A: Both devices maintain the 400V Vdss rating and TO-252-3 DPAK package. The STD5NK40ZT4 provides 3A continuous drain current with 1.8Ω on-resistance, while the STD7NK40ZT4 offers higher current capacity at 5.4A with improved on-resistance of 1Ω. The STD7NK40ZT4 also provides greater power dissipation capability (70W versus 45W at case temperature).

Q: Is the TK5P53D(T6RSS-Q) suitable for 400V applications?

A: Yes. The TK5P53D(T6RSS-Q) is rated for 525V Vdss, which exceeds the 400V requirement of the IRFR320. This higher voltage rating provides additional design margin. The device is electrically compatible with 400V circuit designs and offers enhanced current capacity (5A) and thermal performance (80W at case temperature).

Q: Are all substitute parts available in the same DPAK package?

A: Yes. All substitute parts listed—IRFR320PBF, STD5NK40ZT4, STD7NK40ZT4, and TK5P53D(T6RSS-Q)—are housed in the TO-252-3 DPAK (2 Leads + Tab) package, SC-63 designation. Pin-to-pin compatibility is maintained for direct board-level substitution.

Q: What is the impact of different on-resistance values on circuit performance?

A: On-resistance (Rds On) directly affects power dissipation and switching losses. Lower on-resistance reduces heat generation and improves efficiency. The STD7NK40ZT4 features 1Ω on-resistance compared to 1.8Ω in the IRFR320, resulting in approximately 44% lower conduction losses at equivalent current levels. Selection depends on thermal budget and efficiency requirements of the application.

Q: Do all substitute parts meet RoHS compliance requirements?

A: All substitute parts—IRFR320PBF, STD5NK40ZT4, STD7NK40ZT4, and TK5P53D(T6RSS-Q)—are ROHS3 Compliant. The original IRFR320 is RoHS non-compliant. For applications requiring RoHS compliance, any of the listed substitutes is acceptable.

Q: What is the significance of gate charge (Qg) differences among the substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The IRFR320 and IRFR320PBF specify 20nC at 10V. The STD5NK40ZT4 requires 17nC, the STD7NK40ZT4 requires 26nC, and the TK5P53D(T6RSS-Q) requires only 11nC. Lower gate charge enables faster switching and reduces gate drive power consumption. Higher gate charge may require increased gate drive capability but does not prevent substitution.

Q: Can the STD5NK40ZT4 be used in applications designed for 3.1A continuous current?

A: The STD5NK40ZT4 is rated for 3A continuous drain current, which is 0.1A below the IRFR320 specification of 3.1A. For applications operating at or near the 3.1A limit, the STD5NK40ZT4 may not provide adequate current margin. The STD7NK40ZT4 or TK5P53D(T6RSS-Q) are preferred for applications requiring the full 3.1A specification or higher.

Q: What packaging formats are available for the substitute parts?

A: IRFR320PBF is supplied in Tube packaging. STD5NK40ZT4 and STD7NK40ZT4 are supplied in Cut Tape (CT) and Digi-Reel® format. TK5P53D(T6RSS-Q) is supplied in Tape & Reel (TR) format. Packaging selection depends on production volume and assembly process requirements.

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