IRFR2607Z N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR2607Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 42A continuous drain current in a surface mount DPAK package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The HEXFET® series component operates across a wide temperature range from -55°C to 175°C and is suitable for applications requiring moderate voltage and current switching capabilities in compact form factors.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	42	A
On-State Resistance (Rds On) @ 30A, 10V	22	mOhm
Gate Threshold Voltage (Vgs(th)) @ 50µA	4	V
Gate Charge (Qg) @ 10V	51	nC
Power Dissipation (Max)	110	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-252-3 DPAK	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRFR2607Z is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must equal or exceed 75V to maintain circuit protection margins. Parts rated at 60V operate below the original specification and are acceptable only in applications with confirmed voltage headroom. Parts rated at 100V provide additional margin.

Current Rating (Id): The substitute must support at least 42A continuous drain current at 25°C. Higher current ratings provide design margin; lower ratings are not acceptable.

On-State Resistance (Rds On): Lower resistance values improve efficiency and reduce heat dissipation. The original 22mOhm @ 30A, 10V establishes the baseline. Substitutes with comparable or lower Rds On maintain thermal performance.

Package Compatibility: All substitutes must use TO-252-3 DPAK surface mount packaging to ensure PCB layout compatibility without redesign.

Temperature Range: Operating temperature range must support -55°C to 175°C minimum to match the original specification.

Gate Charge (Qg): Lower gate charge values reduce driver power requirements and switching losses. This parameter influences circuit performance but does not prevent substitution.

Parameter Comparison

Parameter	IRFR2607Z	IPD30N10S3L34ATMA1	BUK9226-75A,118	DMN6017SK3-13	DMNH6021SK3-13	STD45NF75T4	TSM230N06CP ROG
Manufacturer	Infineon	Infineon	Nexperia	Diodes Inc.	Diodes Inc.	STMicroelectronics	Taiwan Semiconductor
Vdss (V)	75	100	75	60	60	75	60
Id @ 25°C (A)	42	30	45	43	50	40	34
Rds On @ 10V (mOhm)	22	31	24.6	18	23	24	23
Qg @ 10V (nC)	51	31	—	55	20.1	80	28
Power Dissipation (W)	110	57	114	50	2.1	125	104
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 150	-55 to 175	-55 to 175	—
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Obsolete	Active	Obsolete	Active	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IPD30N10S3L34ATMA1

The IPD30N10S3L34ATMA1 from Infineon Technologies is the manufacturer-recommended substitute. This active product provides 100V Vdss rating, exceeding the original 75V specification and offering enhanced voltage margin. While the 30A continuous current rating is lower than the original 42A, this device is suitable for applications where the actual operating current does not exceed 30A. The OptiMOS™ series design delivers improved gate charge efficiency (31nC versus 51nC) and maintains full temperature range support (-55°C to 175°C). ROHS3 compliance ensures regulatory alignment for new designs.

Secondary Recommendation: BUK9226-75A,118

The BUK9226-75A,118 from Nexperia USA Inc. matches the original 75V voltage rating and exceeds the current specification with 45A continuous drain current. This TrenchMOS™ device provides superior current handling and maintains comparable on-state resistance (24.6mOhm). The part is AEC-Q101 qualified for automotive applications and ROHS3 compliant. Product status is obsolete, limiting long-term availability.

Tertiary Recommendation: STD45NF75T4

The STD45NF75T4 from STMicroelectronics maintains the 75V voltage rating with 40A continuous current, closely matching the original specification. The STripFET™ II series provides 125W power dissipation capability and full temperature range support. This active product is ROHS3 compliant and offers reliable long-term procurement.

Lower Voltage Alternatives: DMN6017SK3-13, DMNH6021SK3-13, TSM230N06CP ROG

These devices operate at 60V Vdss, below the original 75V specification. Substitution is acceptable only in applications where circuit design confirms adequate voltage margin and the actual operating voltage remains below 60V. The DMNH6021SK3-13 provides the highest current rating (50A) among 60V options and includes AEC-Q101 automotive qualification. The TSM230N06CP ROG offers the largest inventory availability (105,632 pieces).

Frequently Asked Questions (FAQ)

Q: Can I use a 60V rated MOSFET in place of the 75V IRFR2607Z?

A: Substitution with 60V devices (DMN6017SK3-13, DMNH6021SK3-13, TSM230N06CP ROG) is acceptable only if circuit analysis confirms that the maximum operating voltage remains below 60V with adequate safety margin. The original 75V rating provides protection against voltage transients and overshoot conditions. Use of lower-rated devices requires verification of actual circuit voltage conditions.

Q: What is the difference between the IPD30N10S3L34ATMA1 and the original IRFR2607Z?

A: The IPD30N10S3L34ATMA1 provides higher voltage rating (100V versus 75V) and lower gate charge (31nC versus 51nC), improving switching efficiency. The continuous current rating is lower (30A versus 42A). This substitute is suitable for applications where actual operating current does not exceed 30A. Both devices use identical TO-252-3 DPAK packaging and support the full -55°C to 175°C temperature range.

Q: Are all substitute parts ROHS3 compliant?

A: All recommended substitutes except the original IRFR2607Z are ROHS3 compliant. The original part is RoHS non-compliant. For new designs subject to RoHS requirements, select from the active, compliant alternatives: IPD30N10S3L34ATMA1, DMN6017SK3-13, DMNH6021SK3-13, STD45NF75T4, or TSM230N06CP ROG.

Q: Can I directly replace the IRFR2607Z without PCB modifications?

A: Yes. All substitute parts use the TO-252-3 DPAK package with identical pinout and footprint. Direct PCB replacement is possible without layout changes. Verify that thermal management (copper area, heat sinking) is adequate for the selected substitute's power dissipation characteristics.

Q: Which substitute offers the best current handling?

A: The DMNH6021SK3-13 provides the highest continuous drain current among substitutes at 50A, exceeding the original 42A specification. This device is suitable for applications requiring maximum current capacity and includes AEC-Q101 automotive qualification.

Q: What is the inventory status of these substitutes?

A: IPD30N10S3L34ATMA1 (20,100 pieces), BUK9226-75A,118 (8,326 pieces), DMN6017SK3-13 (10,400 pieces), DMNH6021SK3-13 (781 pieces), STD45NF75T4 (15,320 pieces), and TSM230N06CP ROG (105,632 pieces) are currently in stock. The TSM230N06CP ROG offers the largest available quantity.

Q: Does gate charge affect my circuit design?

A: Gate charge (Qg) influences driver power requirements and switching speed. Lower gate charge reduces driver stress and switching losses. The IPD30N10S3L34ATMA1 (31nC) and DMNH6021SK3-13 (20.1nC) offer improved efficiency compared to the original (51nC). Higher gate charge devices like STD45NF75T4 (80nC) require more robust gate drive circuits but do not prevent substitution.

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