IRFR214 Equivalent & Substitute Parts

Part Overview

The IRFR214 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 250V drain-to-source voltage with a continuous drain current of 2.2A at 25°C. The device is housed in a DPAK (TO-252-3) surface mount package and is designed for general-purpose switching applications requiring moderate voltage and current handling.

The IRFR214 is classified as obsolete. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications currently utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	250	V
Continuous Drain Current (Id) @ 25°C	2.2	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	2	Ohm @ 1.3A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	8.2	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	140	pF @ 25V
Power Dissipation (Max)	2.5 / 25	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	DPAK (TO-252-3)	Surface Mount
FET Technology	Metal Oxide (MOSFET)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IRFR214 is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 250V
Continuous Drain Current (Id) must meet or exceed 2.2A at 25°C
On-State Resistance (Rds On) must not exceed specified maximum values to ensure equivalent switching performance
Gate Threshold Voltage (Vgs(th)) must remain within acceptable operating ranges
Operating Temperature Range must support -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

Package Type must be DPAK (TO-252-3) surface mount configuration
Pin configuration must be compatible with existing PCB layouts

Compliance Considerations:

RoHS compliance status affects suitability for new designs and regulated applications
Product status (Active vs. Obsolete) influences long-term availability and supply chain reliability

The substitute parts identified below meet these criteria with variations in current rating, on-state resistance, and gate charge characteristics that remain within acceptable operational boundaries for the IRFR214 application space.

Parameter Comparison

Parameter	IRFR214	IRFR214PBF	FQD4N25TM-WS	SFT1452-TL-W
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi	onsemi
Vdss (V)	250	250	250	250
Id @ 25°C (A)	2.2 (Tc)	2.2 (Tc)	3 (Tc)	3 (Ta)
Rds On Max @ Id, Vgs (Ohm)	2 @ 1.3A, 10V	2 @ 1.3A, 10V	1.75 @ 1.5A, 10V	2.4 @ 1.5A, 10V
Vgs(th) Max @ Id (V)	4 @ 250µA	4 @ 250µA	5 @ 250µA	4.5 @ 1mA
Qg Max @ Vgs (nC)	8.2 @ 10V	8.2 @ 10V	5.6 @ 10V	4.2 @ 10V
Ciss Max @ Vds (pF)	140 @ 25V	140 @ 25V	200 @ 25V	210 @ 20V
Power Dissipation Max (W)	2.5 (Ta) / 25 (Tc)	2.5 (Ta) / 25 (Tc)	2.5 (Ta) / 37 (Tc)	1 (Ta) / 26 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	to 150
Package	DPAK (TO-252-3)	DPAK (TO-252-3)	TO-252AA (DPAK)	DPAK/TP-FA
Product Status	Obsolete	Active	Obsolete	Obsolete
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFR214PBF (Vishay Siliconix)

The IRFR214PBF is an exact electrical equivalent to the IRFR214, maintaining identical electrical specifications across all critical parameters including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance. The primary distinction is product status: IRFR214PBF is classified as Active, ensuring continued availability and supply chain support. IRFR214PBF is ROHS3 compliant, meeting regulatory requirements for new designs and applications subject to RoHS directives. The packaging is identical (DPAK TO-252-3). This part is the direct replacement for the obsolete IRFR214 and is suitable for all applications currently using the original component.

FQD4N25TM-WS (onsemi)

The FQD4N25TM-WS is a parametric equivalent manufactured by onsemi under the QFET® series. It maintains the same 250V Vdss rating and exceeds the current requirement with a 3A continuous drain current rating compared to the IRFR214's 2.2A. The on-state resistance is lower (1.75 Ohm vs. 2 Ohm), resulting in reduced power dissipation and improved switching efficiency. Gate charge is reduced (5.6 nC vs. 8.2 nC), enabling faster switching transitions. The package is mechanically compatible (TO-252AA DPAK). FQD4N25TM-WS is ROHS3 compliant. This part is suitable for applications where improved thermal performance and switching speed are beneficial. Product status is Obsolete.

SFT1452-TL-W (onsemi)

The SFT1452-TL-W is a parametric equivalent manufactured by onsemi with a 250V Vdss rating and 3A continuous drain current. The on-state resistance is higher (2.4 Ohm vs. 2 Ohm), resulting in increased power dissipation compared to the IRFR214. Gate charge is significantly reduced (4.2 nC vs. 8.2 nC), enabling faster switching. The package is mechanically compatible (DPAK/TP-FA). SFT1452-TL-W is ROHS3 compliant. This part is suitable for applications where switching speed is prioritized and thermal management is adequate. Product status is Obsolete.

Frequently Asked Questions (FAQ)

Q: Can IRFR214PBF be used as a direct replacement for IRFR214?

A: Yes. IRFR214PBF is electrically and mechanically identical to IRFR214. All electrical parameters, including Vdss, Id, Rds On, Vgs(th), gate charge, and input capacitance, are equivalent. The package type is identical (DPAK TO-252-3). IRFR214PBF is the recommended replacement due to its Active product status and ROHS3 compliance.

Q: What are the key differences between IRFR214 and FQD4N25TM-WS?

A: Both devices share the same 250V Vdss rating and DPAK package. FQD4N25TM-WS has a higher continuous drain current rating (3A vs. 2.2A), lower on-state resistance (1.75 Ohm vs. 2 Ohm), and lower gate charge (5.6 nC vs. 8.2 nC). These differences result in improved thermal performance and faster switching transitions. FQD4N25TM-WS is suitable for applications where these enhancements are beneficial.

Q: Are all substitute parts ROHS3 compliant?

A: IRFR214PBF, FQD4N25TM-WS, and SFT1452-TL-W are all ROHS3 compliant. The original IRFR214 is RoHS non-compliant. For applications subject to RoHS regulations, use IRFR214PBF or the onsemi alternatives.

Q: Do the substitute parts fit the same PCB footprint as IRFR214?

A: Yes. All substitute parts use DPAK (TO-252-3) or compatible DPAK variants (TO-252AA, DPAK/TP-FA). These packages share the same pin configuration and footprint, enabling direct PCB compatibility without layout modifications.

Q: What is the operating temperature range for each substitute part?

A: IRFR214, IRFR214PBF, and FQD4N25TM-WS all support -55°C to 150°C (TJ). SFT1452-TL-W supports operation to 150°C (TJ) with a lower temperature limit not specified in the provided data. All parts meet the thermal requirements of the original IRFR214.

Q: Which substitute part offers the best thermal performance?

A: FQD4N25TM-WS offers the lowest on-state resistance (1.75 Ohm) and highest power dissipation rating at Tc (37W vs. 25W for IRFR214), resulting in superior thermal performance. SFT1452-TL-W has a higher on-state resistance (2.4 Ohm) and lower power dissipation rating at Tc (26W), making it less suitable for thermally demanding applications.

Q: Can SFT1452-TL-W be used in high-frequency switching applications?

A: SFT1452-TL-W has the lowest gate charge (4.2 nC) among all listed parts, enabling faster switching transitions and reduced switching losses. This characteristic makes it suitable for high-frequency applications where switching speed is critical, provided thermal management is adequate to handle the higher on-state resistance.

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