IRFR130ATM N-Channel MOSFET 100V 13A Equivalent & Substitute Parts

Part Overview

The IRFR130ATM is an N-Channel MOSFET manufactured by onsemi, rated for 100V drain-to-source voltage with 13A continuous drain current at Tc. The device is housed in a TO-252AA (DPAK) surface mount package and is classified as obsolete. Due to its obsolete product status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Substiute Parts

IRFR130ATM
onsemiIn Stock: 5218IRFR130ATM Datasheet
IRFR130ATM
Current Part
AOD2922
Alpha & Omega Semiconductor Inc.In Stock: 39032AOD2922 Datasheet
AOD2922
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AOD478
Alpha & Omega Semiconductor Inc.In Stock: 16228AOD478 Datasheet
AOD478
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STD10NF10T4
STMicroelectronicsIn Stock: 24083STD10NF10T4 Datasheet
STD10NF10T4
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Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 13 A (Tc)
On-State Resistance (Rds On) @ 10V 110 mOhm @ 6.5A, 10V
Gate Threshold Voltage (Vgs(th)) 4 V @ 250µA
Gate Charge (Qg) @ 10V 36 nC
Input Capacitance (Ciss) @ 25V 790 pF
Power Dissipation (Max) 41 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-252-3 (DPAK) Surface Mount
Moisture Sensitivity Level 1 Unlimited

Substitute Part Grouping Explanation

Substitution of the IRFR130ATM is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 100V minimum
  • Continuous Drain Current (Id): 13A or greater at Tc
  • Package Type: TO-252-3 (DPAK) surface mount
  • Gate Threshold Voltage (Vgs(th)): Compatible with 10V drive voltage
  • Maximum Gate Voltage (Vgs): ±20V
  • Moisture Sensitivity Level: 1 (Unlimited)

Secondary Compatibility Factors:

  • On-State Resistance (Rds On): Lower or equivalent values preferred
  • Operating Temperature Range: Minimum -55°C to 150°C
  • Technology: N-Channel MOSFET (Metal Oxide)

Substitute parts are grouped into two categories based on their electrical performance relative to the main part:

Category 1 - Direct Equivalents: Parts meeting or exceeding all primary matching criteria with comparable Rds On and current ratings.

Category 2 - Functional Alternatives: Parts meeting voltage and package requirements with reduced current ratings or modified thermal characteristics, suitable for applications with lower current demands.

Parameter Comparison

Parameter IRFR130ATM (onsemi) STD10NF10T4 (STMicroelectronics) AOD478 (Alpha & Omega) AOD2922 (Alpha & Omega)
Vdss (V) 100 100 100 100
Id @ 25°C (A, Tc) 13 13 11 7
Rds On (mOhm) @ 10V 110 @ 6.5A 130 @ 5A 140 @ 4.5A 140 @ 5A
Vgs(th) (V) @ 250µA 4 4 2.8 2.7
Qg (nC) @ 10V 36 21 13 10
Ciss (pF) 790 @ 25V 460 @ 25V 540 @ 50V 310 @ 50V
Power Dissipation (W, Tc) 41 50 45 17
Operating Temperature (°C) -55 to 150 -55 to 175 -55 to 175 -55 to 175
Package TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK)
Product Status Obsolete Active Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

STD10NF10T4 (STMicroelectronics) - Primary Substitute

The STD10NF10T4 is the recommended primary substitute for the IRFR130ATM. This device matches the critical electrical specifications: 100V Vdss, 13A continuous drain current at Tc, and identical gate threshold voltage of 4V at 250µA. The STD10NF10T4 is manufactured by STMicroelectronics, an active manufacturer with established supply chains. The part is ROHS3 compliant and rated for extended operating temperature range (-55°C to 175°C), providing superior thermal performance compared to the obsolete IRFR130ATM. The STripFET™ II series designation indicates advanced process technology with improved gate charge characteristics (21 nC versus 36 nC), resulting in faster switching performance and reduced drive circuit stress.

AOD478 (Alpha & Omega Semiconductor) - Secondary Substitute

The AOD478 serves as a functional alternative for applications where the full 13A current rating is not required. This device provides 11A continuous drain current at Tc, meeting 85% of the IRFR130ATM current specification. The AOD478 offers superior power dissipation capability (45W at Tc) and extended operating temperature range (-55°C to 175°C). The lower gate threshold voltage (2.8V) and reduced gate charge (13 nC) provide improved switching characteristics. ROHS3 compliance and active product status ensure long-term availability. This substitute is suitable for designs with current margins or where thermal performance is prioritized.

AOD2922 (Alpha & Omega Semiconductor) - Limited Substitute

The AOD2922 is classified as a limited substitute due to reduced continuous drain current (7A at Tc, representing 54% of the IRFR130ATM rating). This device is appropriate only for applications with significantly lower current requirements or as a temporary solution pending design revision. The AOD2922 provides the lowest gate charge (10 nC) and input capacitance (310 pF), offering the fastest switching performance among all substitutes. ROHS3 compliance and active product status are confirmed. Extended operating temperature range (-55°C to 175°C) exceeds the original part specification.

Selection Criteria Summary:

  • Direct replacement with equivalent performance: STD10NF10T4
  • Functional alternative with reduced current rating: AOD478
  • Limited substitute for low-current applications: AOD2922

All substitute parts share identical package type (TO-252-3 DPAK), voltage rating (100V Vdss), and moisture sensitivity level (MSL 1 - Unlimited). All substitutes are manufactured by active suppliers with ROHS3 compliance and REACH unaffected status.

Frequently Asked Questions (FAQ)

Q1: Can the STD10NF10T4 be used as a direct replacement for the IRFR130ATM without circuit modifications?

A: Yes. The STD10NF10T4 meets all critical electrical parameters: 100V Vdss, 13A continuous drain current at Tc, 4V gate threshold voltage, and ±20V maximum gate voltage. The TO-252-3 (DPAK) package is mechanically identical. No circuit modifications are required. The improved gate charge characteristics (21 nC versus 36 nC) may reduce gate drive circuit stress, but existing drive circuits will function correctly.

Q2: What is the primary limitation of the AOD478 as a substitute?

A: The AOD478 provides 11A continuous drain current at Tc, which is 85% of the IRFR130ATM specification. Applications requiring the full 13A rating must either operate at reduced current levels or select the STD10NF10T4. The AOD478 is suitable for designs with current margin or where thermal performance is prioritized over maximum current capacity.

Q3: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use the TO-252-3 (DPAK) package with identical pin configuration and mechanical dimensions. PCB footprints designed for the IRFR130ATM are directly compatible with STD10NF10T4, AOD478, and AOD2922 without layout modifications.

Q4: What is the difference in gate charge between the main part and substitutes?

A: The IRFR130ATM has 36 nC gate charge at 10V. The STD10NF10T4 has 21 nC, the AOD478 has 13 nC, and the AOD2922 has 10 nC. Lower gate charge reduces switching losses and gate drive circuit power consumption. Existing gate drive circuits designed for the IRFR130ATM will operate correctly with lower gate charge substitutes, with improved efficiency.

Q5: Do all substitute parts meet RoHS compliance requirements?

A: Yes. STD10NF10T4, AOD478, and AOD2922 are all ROHS3 compliant. The IRFR130ATM RoHS status is not specified in the available documentation. All substitutes are REACH unaffected and carry EAR99 ECCN classification.

Q6: What is the operating temperature advantage of the substitute parts?

A: The IRFR130ATM operates from -55°C to 150°C (TJ). All substitute parts extend the upper temperature limit to 175°C, providing 25°C additional thermal margin. This extended range improves reliability in high-temperature environments and provides design flexibility for thermal management.

Q7: How do the on-state resistance values compare across all parts?

A: IRFR130ATM: 110 mOhm @ 6.5A, 10V; STD10NF10T4: 130 mOhm @ 5A, 10V; AOD478: 140 mOhm @ 4.5A, 10V; AOD2922: 140 mOhm @ 5A, 10V. The IRFR130ATM has the lowest Rds On. Substitutes have slightly higher on-state resistance, resulting in marginally increased conduction losses. For most applications, this difference is negligible and offset by improved switching characteristics.

Q8: Which substitute part offers the best switching performance?

A: The AOD2922 offers the lowest gate charge (10 nC) and input capacitance (310 pF), providing the fastest switching performance. The STD10NF10T4 provides balanced performance with 21 nC gate charge and 460 pF input capacitance. Selection depends on application requirements: maximum current capacity (STD10NF10T4) or optimized switching speed (AOD2922).

Q9: Are there inventory considerations when selecting a substitute?

A: Yes. Current inventory levels are: IRFR130ATM (5,155 pcs), STD10NF10T4 (23,999 pcs), AOD478 (16,200 pcs), and AOD2922 (38,928 pcs). The IRFR130ATM has limited stock due to obsolete status. All substitute parts have substantial inventory from active manufacturers, ensuring long-term availability for production and field service requirements.

Q10: Can the AOD2922 be used in high-current applications?

A: No. The AOD2922 is rated for 7A continuous drain current at Tc, which is insufficient for applications requiring the full 13A specification of the IRFR130ATM. The AOD2922 is suitable only for applications with current requirements below 7A or where design modifications can accommodate reduced current capacity. For full-current applications, use STD10NF10T4 or AOD478.

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