IRFR120ZTR N-Channel 100V 8.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR120ZTR is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 100V drain-source voltage with 8.7A continuous drain current at 25°C. The device is packaged in TO-252AA (DPAK) surface mount configuration with a maximum power dissipation of 35W. The IRFR120ZTR is classified as obsolete product status, making equivalent and substitute parts necessary for ongoing design support and procurement continuity.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	8.7	A (Tc)
On-State Resistance (Rds On) @ 5.2A, 10V	190	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	35	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRFR120ZTR is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain-Source Voltage (Vdss) must equal or exceed 100V
Continuous Drain Current (Id) must meet or exceed 8.7A at 25°C
On-State Resistance (Rds On) characteristics must support equivalent switching performance
Gate Threshold Voltage (Vgs(th)) must be compatible with 10V drive voltage
Operating temperature range must encompass -55°C to 175°C

Mechanical Compatibility Requirements:

Package must be TO-252-3 (DPAK) surface mount configuration
Pin configuration must match TO-252AA standard

Compliance Requirements:

RoHS compliance status (ROHS3 preferred for new designs)
Moisture Sensitivity Level (MSL) must be 1 (Unlimited)

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications with different packaging or product status) and functional substitutes (enhanced or alternative electrical characteristics within acceptable operating margins).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Power Diss. (W)	Temp Range (°C)	Package	Product Status	RoHS
IRFR120ZTR	Infineon	100	8.7	190 @ 5.2A, 10V	4 @ 250µA	35	-55 to 175	TO-252-3 (DPAK)	Obsolete	Non-compliant
IRFR120ZTRPBF	Infineon	100	8.7	190 @ 5.2A, 10V	4 @ 250µA	35	-55 to 175	TO-252-3 (DPAK)	Active	ROHS3 Compliant
FQD13N10TM	onsemi	100	10	180 @ 5A, 10V	4 @ 250µA	40	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
IRFR120PBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	42	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
IRFR120TRPBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	42	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
IRFR120TRLPBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	42	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
IRFR120TRRPBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	42	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
STD6NF10T4	STMicroelectronics	100	6	250 @ 3A, 10V	4 @ 250µA	30	-65 to 175	TO-252-3 (DPAK)	Active	ROHS3 Compliant
RSD050N10TL	Rohm Semiconductor	100	5	190 @ 5A, 10V	2.5 @ 1mA	15	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
FDD1600N10ALZ	onsemi	100	6.8	160 @ 3.4A, 10V	2.8 @ 250µA	14.9	-55 to 150	TO-252-3 (DPAK)	Active	ROHS3 Compliant
BUK7275-100A,118	Nexperia USA Inc.	100	21.7	75 @ 13A, 10V	4 @ 1mA	89	-55 to 175	TO-252-3 (DPAK)	Obsolete	ROHS3 Compliant

Engineering Selection Recommendations

Primary Equivalent (Direct Replacement):

IRFR120ZTRPBF is the direct parametric equivalent to IRFR120ZTR. Both devices share identical electrical specifications: 100V Vdss, 8.7A continuous drain current, 190mOhm Rds On, and 35W power dissipation. The primary distinction is product status and RoHS compliance. IRFR120ZTRPBF is classified as Active product status with ROHS3 compliance, making it suitable for new designs and ongoing production. This part is available in Tape & Reel packaging format.

Secondary Equivalents (Active Alternatives):

FQD13N10TM (onsemi) provides enhanced current capability at 10A continuous drain current with improved Rds On of 180mOhm, while maintaining 100V Vdss and 4V gate threshold voltage. Power dissipation increases to 40W. This device is Active status with ROHS3 compliance. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original part at the upper limit.

IRFR120TRPBF, IRFR120TRLPBF, and IRFR120TRRPBF (Vishay Siliconix) are variants of the IRFR120 base product number with identical 100V Vdss and 4V gate threshold voltage. These devices specify 7.7A continuous drain current and 270mOhm Rds On, representing lower current capability but higher power dissipation at 42W. All three variants are Active status with ROHS3 compliance. Operating temperature range is -55°C to 150°C.

Functional Alternatives (Enhanced Performance):

BUK7275-100A,118 (Nexperia USA Inc.) is a TrenchMOS™ series device with significantly enhanced specifications: 21.7A continuous drain current and 75mOhm Rds On at 13A, 10V. Power dissipation reaches 89W. This device maintains 100V Vdss and ±20V gate voltage rating. Operating temperature range extends to -55°C to 175°C, matching the original part. BUK7275-100A,118 includes AEC-Q101 automotive qualification and ROHS3 compliance. Product status is Obsolete.

Lower Current Alternatives:

STD6NF10T4 (STMicroelectronics) provides 6A continuous drain current with 250mOhm Rds On and 30W power dissipation. Operating temperature range extends to -65°C to 175°C. This device is suitable for applications where the full 8.7A capability is not required.

RSD050N10TL (Rohm Semiconductor) specifies 5A continuous drain current with 190mOhm Rds On and 15W power dissipation. This device is appropriate for reduced current applications.

FDD1600N10ALZ (onsemi) provides 6.8A continuous drain current with superior Rds On of 160mOhm and reduced power dissipation of 14.9W, making it suitable for efficiency-critical applications.

Compliance Considerations:

All recommended active substitutes carry ROHS3 compliance certification. The original IRFR120ZTR is RoHS non-compliant. For new designs and applications subject to RoHS requirements, IRFR120ZTRPBF is the preferred direct replacement. For applications requiring enhanced performance or specific thermal characteristics, the secondary equivalents and functional alternatives provide ROHS3-compliant options.

Frequently Asked Questions (FAQ)

Q: Can IRFR120ZTRPBF directly replace IRFR120ZTR in existing designs?

A: Yes. IRFR120ZTRPBF is a parametric equivalent with identical electrical specifications: 100V Vdss, 8.7A continuous drain current, 190mOhm Rds On, and 35W power dissipation. Both devices use TO-252-3 (DPAK) package with identical pin configuration. The primary difference is that IRFR120ZTRPBF is Active product status with ROHS3 compliance, whereas IRFR120ZTR is Obsolete and RoHS non-compliant.

Q: What is the difference between IRFR120TRPBF and IRFR120ZTRPBF?

A: IRFR120TRPBF is manufactured by Vishay Siliconix and specifies 7.7A continuous drain current with 270mOhm Rds On. IRFR120ZTRPBF is manufactured by Infineon Technologies and specifies 8.7A continuous drain current with 190mOhm Rds On. Both maintain 100V Vdss and 4V gate threshold voltage. IRFR120ZTRPBF provides higher current capability and lower on-state resistance, making it the closer equivalent to the original IRFR120ZTR.

Q: Can FQD13N10TM be used as a substitute for IRFR120ZTR?

A: FQD13N10TM is a functional substitute suitable for applications where the original 8.7A current rating is insufficient or where improved performance is beneficial. FQD13N10TM provides 10A continuous drain current with 180mOhm Rds On, representing enhanced current handling and reduced on-state losses. Both devices share 100V Vdss, 4V gate threshold voltage, and TO-252-3 (DPAK) package. Operating temperature range for FQD13N10TM is -55°C to 150°C, which is 25°C lower than the original part at the upper limit. This substitution is appropriate for new designs but requires thermal analysis for applications operating near 150°C.

Q: Is BUK7275-100A,118 suitable for replacing IRFR120ZTR?

A: BUK7275-100A,118 is a functional alternative with significantly enhanced specifications. It provides 21.7A continuous drain current and 75mOhm Rds On, compared to 8.7A and 190mOhm for the original part. Both devices maintain 100V Vdss and TO-252-3 (DPAK) package. BUK7275-100A,118 includes AEC-Q101 automotive qualification and extends operating temperature to -55°C to 175°C. This device is suitable for applications requiring higher current capacity or lower on-state losses. However, BUK7275-100A,118 is classified as Obsolete product status.

Q: What are the packaging differences among the IRFR120 variants?

A: IRFR120 variants differ primarily in packaging format: IRFR120PBF is supplied in Tube packaging; IRFR120TRPBF and IRFR120TRRPBF are supplied in Tape & Reel (TR) format; IRFR120TRLPBF is supplied in Cut Tape (CT) format. All variants use identical TO-252-3 (DPAK) device package with the same pin configuration and electrical specifications (7.7A, 270mOhm Rds On). Selection among these variants depends on procurement and assembly requirements rather than electrical performance.

Q: Can lower current alternatives like STD6NF10T4 or RSD050N10TL be used?

A: STD6NF10T4 and RSD050N10TL are suitable only for applications where the continuous drain current requirement does not exceed 6A and 5A respectively. Both devices maintain 100V Vdss and 4V gate threshold voltage with TO-252-3 (DPAK) package. These alternatives are appropriate for designs where the original 8.7A capability is not fully utilized, offering potential cost or thermal advantages. However, they cannot support applications requiring the full 8.7A current rating of the original IRFR120ZTR.

Q: What is the significance of RoHS compliance in selecting a substitute?

A: RoHS compliance is mandatory for products sold into markets with RoHS regulations. The original IRFR120ZTR is RoHS non-compliant. All recommended active substitutes (IRFR120ZTRPBF, FQD13N10TM, IRFR120TRPBF variants, STD6NF10T4, RSD050N10TL, FDD1600N10ALZ) carry ROHS3 compliance certification. For new designs and ongoing production, ROHS3-compliant devices are required. For legacy applications or designs not subject to RoHS requirements, the original IRFR120ZTR may remain acceptable if inventory is available.

Q: How do gate charge and input capacitance affect substitution decisions?

A: Gate charge (Qg) and input capacitance (Ciss) determine switching speed and gate drive requirements. IRFR120ZTR specifies 10nC gate charge and 310pF input capacitance. Substitutes with similar or lower values (FQD13N10TM: 16nC, 450pF; IRFR120TRPBF: 16nC, 360pF) are compatible with existing gate drive circuits. Devices with significantly different values (BUK7275-100A,118: 1210pF input capacitance) may require gate drive circuit optimization. For direct replacement applications, gate charge and input capacitance should be verified against the original gate drive design specifications.

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