IRFR120ZPBF N-Channel 100V 8.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR120ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 8.7A continuous drain current at 25°C. The device is packaged in TO-252AA (DPAK) surface mount configuration and is part of the HEXFET® series. This part is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFR120ZPBF operates across a temperature range of -55°C to 175°C and dissipates up to 35W at the case temperature. It features a maximum gate-source voltage of ±20V and is RoHS3 compliant with MSL 1 (unlimited moisture sensitivity level).

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	8.7	A (Tc)
On-State Resistance (Rds On) @ 5.2A, 10V	190	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	10	nC
Input Capacitance (Ciss) @ 25V	310	pF
Power Dissipation (Max)	35	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 DPAK	Surface Mount
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the IRFR120ZPBF is determined by the following critical parameters:

Electrical Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must meet or exceed 8.7A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance; values within 190mOhm ±30% are functionally equivalent
Gate-Source Threshold Voltage (Vgs(th)): Must be compatible with 4V nominal specification
Maximum Gate-Source Voltage (Vgs Max): Must support ±20V operation
Operating Temperature Range: Must support -55°C to 175°C minimum

Mechanical Compatibility Criteria:

Package Type: TO-252-3 DPAK (2 Leads + Tab) surface mount configuration
Pin Configuration: Identical gate, drain, and source pin arrangement

Compliance Criteria:

RoHS3 Compliance: Required for environmental standards
MSL Rating: Level 1 (Unlimited) preferred for manufacturing flexibility

Substitute parts are grouped into three categories: direct manufacturer variants (same base part number with different packaging), cross-manufacturer equivalents (matching electrical specifications), and performance-enhanced alternatives (higher current or power ratings within the same package).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Max (W)	Tj Range (°C)	Package	Status
IRFR120ZPBF	Infineon	100	8.7	190 @ 5.2A, 10V	4 @ 250µA	10 @ 10V	310 @ 25V	35	-55 to 175	TO-252AA DPAK	Discontinued
IRFR120NTRPBF	Infineon	100	9.4	210 @ 5.6A, 10V	4 @ 250µA	25 @ 10V	330 @ 25V	48	-55 to 175	TO-252AA DPAK	Active
IRFR120PBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	16 @ 10V	360 @ 25V	42	-55 to 150	TO-252-3 DPAK	Active
IRFR120TRPBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	16 @ 10V	360 @ 25V	42	-55 to 150	TO-252-3 DPAK	Active
IRFR120TRLPBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	16 @ 10V	360 @ 25V	42	-55 to 150	TO-252-3 DPAK	Active
IRFR120TRRPBF	Vishay Siliconix	100	7.7	270 @ 4.6A, 10V	4 @ 250µA	16 @ 10V	360 @ 25V	42	-55 to 150	TO-252-3 DPAK	Active
FQD13N10TM	onsemi	100	10	180 @ 5A, 10V	4 @ 250µA	16 @ 10V	450 @ 25V	40	-55 to 150	TO-252AA	Active
FDD1600N10ALZ	onsemi	100	6.8	160 @ 3.4A, 10V	2.8 @ 250µA	3.61 @ 10V	225 @ 50V	14.9	-55 to 150	TO-252AA	Active
RSD050N10TL	Rohm	100	5	190 @ 5A, 10V	2.5 @ 1mA	14 @ 10V	530 @ 25V	15	-55 to 150	CPT3	Active
STD6NF10T4	STMicroelectronics	100	6	250 @ 3A, 10V	4 @ 250µA	14 @ 10V	280 @ 25V	30	-65 to 175	TO-252-3 DPAK	Active
BUK7275-100A,118	Nexperia	100	21.7	75 @ 13A, 10V	4 @ 1mA	N/A	1210 @ 25V	89	-55 to 175	TO-252-3 DPAK	Obsolete

Engineering Selection Recommendations

Primary Recommendation: IRFR120NTRPBF (Infineon Technologies)

The IRFR120NTRPBF is the direct successor to the IRFR120ZPBF within the Infineon HEXFET® product line. It maintains identical voltage and threshold specifications while providing 9.4A continuous drain current (8% higher than the original 8.7A). The part is currently in active production status with 115,718 units in stock. Operating temperature range matches the original specification (-55°C to 175°C). RoHS3 compliance and MSL 1 rating are maintained. Gate charge increases from 10nC to 25nC, and on-state resistance increases slightly from 190mOhm to 210mOhm, representing acceptable trade-offs for improved current handling.

Secondary Recommendation: FQD13N10TM (onsemi)

The FQD13N10TM provides 10A continuous drain current with superior on-state resistance of 180mOhm at 5A, 10V (compared to 190mOhm for the original part). The device is packaged in TO-252AA with identical pin configuration. RoHS3 compliance and MSL 1 rating are confirmed. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original specification. This part is suitable for applications where the reduced upper temperature limit is acceptable and lower on-state resistance is beneficial for thermal management.

Alternative for Cost-Sensitive Applications: STD6NF10T4 (STMicroelectronics)

The STD6NF10T4 offers 6A continuous drain current with TO-252-3 DPAK packaging. Operating temperature range extends to -65°C to 175°C, exceeding the original specification. On-state resistance is 250mOhm at 3A, 10V. This part is suitable for applications with lower current requirements or where extended low-temperature operation is required. RoHS3 compliance is confirmed.

Performance-Enhanced Alternative: BUK7275-100A,118 (Nexperia)

The BUK7275-100A,118 provides significantly higher current capability at 21.7A with superior on-state resistance of 75mOhm at 13A, 10V. The device is AEC-Q101 automotive qualified and maintains -55°C to 175°C operating range. This part is suitable for applications requiring higher current handling or lower conduction losses, though it is currently listed as obsolete. Power dissipation capability is 89W, substantially higher than the original 35W.

Not Recommended: FDD1600N10ALZ (onsemi)

The FDD1600N10ALZ provides only 6.8A continuous drain current, which is below the original 8.7A specification. While on-state resistance is favorable at 160mOhm, the reduced current rating makes this part unsuitable as a direct substitute for the IRFR120ZPBF.

Not Recommended: RSD050N10TL (Rohm Semiconductor)

The RSD050N10TL is rated for only 5A continuous drain current, significantly below the original 8.7A specification. Although on-state resistance matches at 190mOhm, the reduced current capability and different package type (CPT3 versus DPAK) make this part unsuitable for direct substitution.

Frequently Asked Questions (FAQ)

Q1: Can I use IRFR120NTRPBF as a direct replacement for IRFR120ZPBF?

Yes. The IRFR120NTRPBF is the active production equivalent from Infineon Technologies. Both parts share identical drain-to-source voltage (100V), gate-source threshold voltage (4V @ 250µA), and operating temperature range (-55°C to 175°C). The IRFR120NTRPBF provides higher continuous drain current (9.4A versus 8.7A) and improved power dissipation capability (48W versus 35W). Pin configuration and TO-252AA DPAK package are identical. RoHS3 compliance and MSL 1 rating are maintained.

Q2: What is the difference between IRFR120TRPBF, IRFR120TRLPBF, and IRFR120TRRPBF?

These three Vishay Siliconix parts are electrically identical variants of the IRFR120 base product, differing only in packaging format. IRFR120TRPBF is supplied in Tape & Reel (TR) format. IRFR120TRLPBF is supplied in Cut Tape (CT) format. IRFR120TRRPBF is supplied in Tape & Reel (TR) format. All three share identical electrical specifications: 100V Vdss, 7.7A continuous drain current, 270mOhm on-state resistance, and -55°C to 150°C operating range. Selection depends on procurement and assembly requirements rather than electrical performance.

Q3: Why does FQD13N10TM have lower on-state resistance than the original part?

The FQD13N10TM achieves 180mOhm on-state resistance at 5A, 10V compared to 190mOhm for the IRFR120ZPBF at 5.2A, 10V. This 5% improvement results from onsemi's QFET® technology platform, which optimizes the silicon die design for lower conduction losses. Lower on-state resistance reduces power dissipation during switching operations and improves thermal performance in high-frequency applications.

Q4: Is the operating temperature range difference between IRFR120ZPBF (-55°C to 175°C) and FQD13N10TM (-55°C to 150°C) significant?

The 25°C difference in maximum junction temperature affects applications operating at elevated ambient temperatures or with high power dissipation. If your design operates below 150°C junction temperature, the FQD13N10TM is fully compatible. If sustained operation above 150°C is required, the IRFR120NTRPBF or STD6NF10T4 are preferred, as both support 175°C maximum junction temperature.

Q5: Can I substitute a part with higher current rating, such as BUK7275-100A,118 (21.7A)?

Yes, from an electrical standpoint. Higher current-rated devices are functionally compatible in circuits designed for lower current operation. The BUK7275-100A,118 provides superior on-state resistance (75mOhm versus 190mOhm), resulting in lower conduction losses and improved thermal performance. However, this part is currently obsolete, making long-term procurement difficult. The IRFR120NTRPBF is the recommended active alternative.

Q6: What does MSL 1 (Unlimited) moisture sensitivity level mean for component handling?

MSL 1 indicates the component has unlimited shelf life and requires no special moisture control during storage or handling. Unlike higher MSL ratings (2-6) that require dry-pack storage and baking procedures before soldering, MSL 1 components can be stored in standard conditions indefinitely. This simplifies inventory management and reduces manufacturing process complexity.

Q7: Are all substitute parts RoHS3 compliant?

All recommended substitute parts listed in this document are RoHS3 compliant. RoHS3 compliance ensures the parts do not contain restricted substances (lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers) above specified thresholds. This compliance is mandatory for most commercial and industrial applications.

Q8: What is the significance of gate charge (Qg) differences between parts?

Gate charge represents the total charge required to switch the MOSFET from off to on state. The IRFR120ZPBF requires 10nC at 10V, while IRFR120NTRPBF requires 25nC. Higher gate charge increases switching time and driver power consumption. In high-frequency switching applications (>100kHz), lower gate charge reduces switching losses. For low-frequency applications (<10kHz), gate charge difference is negligible.

Q9: Can I use STD6NF10T4 if my application requires only 6A continuous current?

Yes. The STD6NF10T4 is rated for 6A continuous drain current, which is below the original 8.7A specification but may be acceptable if your actual circuit current requirement is 6A or less. The part offers extended operating temperature range (-65°C to 175°C) and RoHS3 compliance. On-state resistance is 250mOhm at 3A, 10V, which is higher than the original 190mOhm specification. Verify that your thermal design accommodates the higher on-state resistance before selection.

Q10: What packaging considerations apply when selecting substitute parts?

All recommended substitute parts use TO-252-3 DPAK or TO-252AA surface mount packages with identical pin configuration (Gate, Drain, Source). These packages are mechanically and electrically interchangeable on PCBs designed for TO-252 footprints. RSD050N10TL uses CPT3 package, which is physically similar but may require PCB footprint verification. Verify PCB layout compatibility before final part selection.

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