IRFR120Z N-Channel MOSFET 100V 8.7A DPAK Equivalent & Substitute Parts

Part Overview

The IRFR120Z is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 100V drain-to-source voltage with 8.7A continuous drain current at 25°C. The device is packaged in TO-252AA (DPAK) surface mount configuration with a maximum power dissipation of 35W at case temperature. The IRFR120Z is classified as obsolete, necessitating identification of active equivalent and substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	8.7	A (Tc)
On-State Resistance (Rds On) @ 10V	190	mOhm @ 5.2A, 10V
Gate Threshold Voltage (Vgs(th))	4	V @ 250µA
Gate Charge (Qg) @ 10V	10	nC
Input Capacitance (Ciss) @ 25V	310	pF
Power Dissipation (Max)	35	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRFR120Z is determined by electrical and mechanical compatibility within the following criteria:

Primary Substitution Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must meet or exceed 8.7A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance; values within ±50% of the original are acceptable for direct substitution
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry (typically 4V ±1V)
Package Type: TO-252-3 DPAK (SC-63) for mechanical and thermal compatibility
Mounting Type: Surface Mount required
Operating Temperature Range: Must support -55°C to 175°C or equivalent industrial range

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Higher ratings provide thermal margin
RoHS Compliance: ROHS3 compliance preferred for modern applications
Product Status: Active status ensures long-term availability

Substitutes are grouped into two categories: direct replacements with equivalent electrical characteristics and functional alternatives with enhanced performance specifications that maintain backward compatibility.

Parameter Comparison

Parameter	IRFR120Z	IRFR120PBF	IRFR120TRPBF	FQD13N10TM	FDD1600N10ALZ	RSD050N10TL	STD6NF10T4	BUK7275-100A,118
Manufacturer	Infineon	Vishay Siliconix	Vishay Siliconix	onsemi	onsemi	Rohm Semiconductor	STMicroelectronics	Nexperia USA Inc.
Vdss (V)	100	100	100	100	100	100	100	100
Id @ 25°C (A)	8.7	7.7	7.7	10	6.8	5	6	21.7
Rds On @ 10V (mOhm)	190 @ 5.2A	270 @ 4.6A	270 @ 4.6A	180 @ 5A	160 @ 3.4A	190 @ 5A	250 @ 3A	75 @ 13A
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	2.8 @ 250µA	2.5 @ 1mA	4 @ 250µA	4 @ 1mA
Qg @ 10V (nC)	10	16	16	16	3.61	14	14	—
Ciss @ 25V (pF)	310	360	360	450	225	530	280	1210
Power Dissipation (W)	35 (Tc)	42 (Tc)	42 (Tc)	40 (Tc)	14.9 (Tc)	15 (Tc)	30 (Tc)	89 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 150	-55 to 150	-55 to 150	-55 to 150	—55 to 150	-65 to 175	-55 to 175
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Obsolete
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Direct Equivalent Substitutes (Preferred for Pin-Compatible Replacement):

IRFR120PBF, IRFR120TRPBF, and IRFR120TRLPBF are functionally equivalent to the IRFR120Z with identical electrical specifications (7.7A continuous drain current, 100V Vdss, 4V Vgs(th)). These Vishay Siliconix devices are active products with ROHS3 compliance and maintain the same TO-252-3 DPAK package. The primary difference is packaging format (Tube, Tape & Reel, or Cut Tape). These substitutes are suitable for direct replacement in existing designs without circuit modification.

Performance-Enhanced Substitutes (Higher Current Capability):

FQD13N10TM (onsemi QFET® series) provides 10A continuous drain current with 180mOhm Rds On, exceeding the IRFR120Z current rating while maintaining 100V Vdss and compatible gate characteristics. This device is active and ROHS3 compliant. The higher current capability provides thermal margin in applications approaching the original device's current limits.

Lower-Current Alternatives (Reduced Thermal Dissipation):

FDD1600N10ALZ (onsemi PowerTrench® series) and RSD050N10TL (Rohm Semiconductor) are suitable for applications where the full 8.7A capability is not required. FDD1600N10ALZ provides 6.8A at lower gate charge (3.61nC) and reduced input capacitance (225pF), beneficial for high-frequency switching applications. RSD050N10TL offers 5A continuous current with identical Rds On (190mOhm) to the original device.

Extended Temperature Range Alternative:

STD6NF10T4 (STMicroelectronics STripFET™ series) supports -65°C to 175°C operating range, exceeding the IRFR120Z specification. This device provides 6A continuous current and is ROHS3 compliant, suitable for applications requiring extended low-temperature operation.

High-Performance Alternative (Not Recommended for Direct Substitution):

BUK7275-100A,118 (Nexperia TrenchMOS™ series) delivers 21.7A continuous current with significantly lower Rds On (75mOhm) and higher power dissipation (89W). This device is automotive-qualified (AEC-Q101) but is classified as obsolete. While electrically compatible, the substantially higher current rating and performance characteristics make this suitable only for applications requiring enhanced thermal performance and current handling.

Compliance Considerations:

All active substitute options are ROHS3 compliant, addressing environmental regulatory requirements. The IRFR120Z is RoHS non-compliant; migration to compliant alternatives is recommended for new designs and long-term product support.

Frequently Asked Questions (FAQ)

Q: Can IRFR120PBF directly replace IRFR120Z without circuit modification?

A: Yes. IRFR120PBF is a direct functional equivalent with identical drain-to-source voltage (100V), gate threshold voltage (4V @ 250µA), and compatible gate charge characteristics (16nC vs. 10nC). The continuous drain current specification differs slightly (7.7A vs. 8.7A), but this remains within acceptable tolerance for most applications. Both devices use TO-252-3 DPAK packaging. Verify thermal design margins if the application operates near the original device's current limits.

Q: What is the difference between IRFR120TRPBF and IRFR120TRLPBF?

A: Both devices are electrically identical Vishay Siliconix IRFR120 variants with 7.7A continuous current, 100V Vdss, and 270mOhm Rds On. The difference is packaging format: IRFR120TRPBF is supplied in Tape & Reel (TR) format, while IRFR120TRLPBF is supplied in Cut Tape (CT) format. Selection depends on procurement and assembly requirements. Both are active products with ROHS3 compliance.

Q: Is FQD13N10TM suitable as a substitute if my application requires higher current capability?

A: Yes. FQD13N10TM provides 10A continuous drain current compared to IRFR120Z's 8.7A, with compatible 100V Vdss and 4V Vgs(th). The device is active and ROHS3 compliant. Rds On is 180mOhm at 5A (10V), slightly lower than the original 190mOhm specification. This substitute is appropriate for applications approaching or exceeding the original device's current rating. Verify gate drive circuit compatibility, as input capacitance is higher (450pF vs. 310pF).

Q: Can I use FDD1600N10ALZ if my application requires lower power dissipation?

A: Yes, if your circuit does not require the full 8.7A continuous current. FDD1600N10ALZ is rated for 6.8A continuous current with significantly lower gate charge (3.61nC vs. 10nC) and reduced input capacitance (225pF vs. 310pF). These characteristics reduce switching losses and gate drive power requirements. The device is active and ROHS3 compliant. Maximum power dissipation is 14.9W (Tc), substantially lower than the original 35W specification. Operating temperature range is -55°C to 150°C, which is 25°C lower than the original device's upper limit.

Q: Why is BUK7275-100A,118 listed as a substitute if it is obsolete?

A: BUK7275-100A,118 is included because it meets the electrical substitution criteria (100V Vdss, N-Channel MOSFET, TO-252-3 DPAK package) and is referenced in the original IRFR120Z substitute list. However, its obsolete status limits practical application for new designs. The device offers superior performance (21.7A continuous current, 75mOhm Rds On, 89W power dissipation) and automotive qualification (AEC-Q101), making it suitable only for applications where enhanced performance justifies sourcing from limited inventory or alternative suppliers.

Q: What are the key electrical parameters I must verify when selecting a substitute?

A: The critical parameters for substitution compatibility are: (1) Drain-to-Source Voltage (Vdss) must equal or exceed 100V; (2) Continuous Drain Current (Id) must support your application's maximum current requirement; (3) Gate Threshold Voltage (Vgs(th)) must be compatible with your gate drive circuit (typically 4V ±1V); (4) On-State Resistance (Rds On) affects power dissipation and thermal design; (5) Package type must be TO-252-3 DPAK for mechanical compatibility; (6) Operating temperature range must encompass your application's thermal environment. Secondary considerations include gate charge (Qg) and input capacitance (Ciss), which affect switching speed and gate drive power requirements.

Q: Are all substitute parts available in the same packaging options as IRFR120Z?

A: No. The IRFR120Z was supplied in standard packaging (packaging type not specified in original data). Substitute parts are available in multiple packaging formats: Tube (IRFR120PBF), Cut Tape (IRFR120TRLPBF, STD6NF10T4), Tape & Reel (IRFR120TRPBF, IRFR120TRRPBF), and Digi-Reel® (FDD1600N10ALZ, FQD13N10TM). Verify packaging availability with your supplier to ensure compatibility with your assembly process and procurement requirements.

Q: What is the significance of RoHS compliance in selecting a substitute?

A: The IRFR120Z is RoHS non-compliant, indicating it contains restricted substances (lead, cadmium, hexavalent chromium, or others). All active substitute options listed are ROHS3 compliant, meeting current environmental regulations in the European Union, China, and other jurisdictions. For new product designs, regulatory compliance, and long-term supply chain sustainability, ROHS3-compliant substitutes are mandatory. Existing designs using IRFR120Z may continue operation, but migration to compliant alternatives is recommended for future production.

Q: Can I use STD6NF10T4 if my application requires extended low-temperature operation?

A: Yes. STD6NF10T4 supports -65°C to 175°C operating temperature range, extending 10°C below the IRFR120Z specification at the lower end. This device is suitable for applications requiring operation in cold environments or extended temperature margins. The device provides 6A continuous current (below the original 8.7A) and is ROHS3 compliant. Verify that 6A current capability meets your application requirements before selection.

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