IRFR1205 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR1205 is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage and 44A continuous drain current at 25°C. The device is housed in a TO-252-3 (DPAK) surface mount package with a maximum power dissipation of 107W at case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility with the TO-252-3 package footprint and operate within the specified voltage and current parameters of the original design.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	44	A (Tc)
On-State Resistance (Rds On) @ 26A, 10V	27	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	65	nC
Power Dissipation (Max)	107	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-252-3 (DPAK)
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRFR1205 is determined by the following critical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. Parts rated at 60V, 100V, or higher voltage classes are acceptable as they provide backward compatibility in voltage stress conditions.

Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 44A at 25°C case temperature. This ensures the substitute can handle the same or greater current load without thermal derating.

Package Compatibility: All substitute parts must use the TO-252-3 (DPAK) surface mount package to ensure PCB footprint compatibility without layout redesign.

On-State Resistance (Rds On): The maximum Rds On specification at the rated gate voltage (10V) should be comparable to or lower than the original 27mOhm to maintain similar power dissipation characteristics and thermal performance.

Gate Threshold Voltage (Vgs(th)): Substitute parts with Vgs(th) values between 2.4V and 4V are compatible, as this range ensures proper gate drive compatibility with standard PWM controller outputs.

Temperature Range: All substitute parts must support the full operating temperature range of -55°C to 175°C (TJ).

Compliance Status: Active product status and RoHS3 compliance are preferred for long-term availability and regulatory adherence.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Vgs(th) (V)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
IRFR1205	Infineon	55	44	27	4	65	107	TO-252-3	Obsolete
IPD30N10S3L34ATMA1	Infineon	100	30	31	2.4	31	57	TO-252-3	Active
IPD35N10S3L26ATMA1	Infineon	100	35	24	2.4	39	71	TO-252-3	Active
STD30NF06LT4	STMicroelectronics	60	35	28	2.5	31	70	TO-252-3	Active
AOD4130	Alpha & Omega	60	30	24	2.8	34	52	TO-252-3	Active
HUF75329D3ST	onsemi	55	20	26	4	65	128	TO-252-3	Active
SQD23N06-31L_GE3	Vishay Siliconix	60	23	31	2.5	24	37	TO-252-3	Active
STD25NF10LT4	STMicroelectronics	100	25	35	2.5	52	100	TO-252-3	Active
STD25NF10T4	STMicroelectronics	100	25	38	4	55	100	TO-252-3	Active
STD26NF10	STMicroelectronics	100	25	38	4	55	100	TO-252-3	Active
STD30NF06T4	STMicroelectronics	60	28	28	4	58	70	TO-252-3	Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

STD30NF06T4 (STMicroelectronics) is the closest functional equivalent. It maintains the same 60V voltage class, provides 28A continuous current (within 64% of the original 44A), and offers identical Rds On of 28mOhm at 10V gate voltage. The gate threshold voltage of 4V matches the original specification exactly. This part is RoHS3 compliant and carries active product status with high inventory availability (59,650 units).

HUF75329D3ST (onsemi) matches the original 55V voltage rating and 4V gate threshold voltage. Although the continuous current rating is 20A (lower than the original 44A), the power dissipation rating of 128W exceeds the original 107W, indicating superior thermal performance. This part is RoHS3 compliant and active.

Secondary Substitutes (Higher Voltage Rating):

IPD35N10S3L26ATMA1 (Infineon OptiMOS™) provides 35A continuous current at 100V rating with superior Rds On of 24mOhm at 10V. The higher voltage rating provides additional design margin. This part is RoHS3 compliant and active with 8,550 units in stock.

STD30NF06LT4 (STMicroelectronics STripFET™) offers 35A at 60V with 28mOhm Rds On. It is RoHS3 compliant and active with 20,400 units available.

Current-Limited Substitutes (Lower Current Rating):

STD25NF10T4 and STD25NF10LT4 (STMicroelectronics) are rated for 25A at 100V. These parts are suitable only for applications where the design current requirement is 25A or less. Both are RoHS3 compliant and active.

AOD4130 (Alpha & Omega) provides 30A at 60V with excellent Rds On of 24mOhm. It is RoHS3 compliant and active with 15,300 units in stock.

Compliance Considerations:

All recommended substitute parts are RoHS3 compliant, addressing regulatory requirements for new designs. The original IRFR1205 is RoHS non-compliant, making substitution necessary for compliance-driven applications. All substitute parts maintain the same operating temperature range of -55°C to 175°C (TJ) and moisture sensitivity level of 1 (unlimited).

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a higher voltage rating (100V) in place of the 55V IRFR1205?

A: Yes. A higher voltage rating provides backward compatibility. The 100V-rated parts (IPD30N10S3L34ATMA1, IPD35N10S3L26ATMA1, STD25NF10T4, STD25NF10LT4, STD26NF10) can be used in circuits designed for 55V operation. The higher voltage rating does not degrade performance in lower-voltage applications.

Q: What is the minimum current rating I should select for a substitute?

A: The substitute part must have a continuous drain current (Id) rating equal to or greater than the maximum current your circuit will draw. The IRFR1205 is rated for 44A. If your application requires less than 44A, parts rated for 25A, 28A, 30A, or 35A are acceptable. If your application requires the full 44A, select STD30NF06T4 (28A), HUF75329D3ST (20A), or higher-current alternatives.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All listed substitute parts use the TO-252-3 (DPAK) package, which has identical pin configuration and footprint dimensions. No PCB layout changes are required.

Q: What does Rds On (on-state resistance) mean, and why is it important?

A: Rds On is the resistance between drain and source when the MOSFET is fully conducting (on-state). Lower Rds On values result in lower power dissipation and less heat generation. The IRFR1205 has 27mOhm Rds On. Substitute parts with equal or lower Rds On values maintain or improve thermal performance.

Q: Can I use a part with a lower gate threshold voltage (Vgs(th))?

A: Yes. Parts with lower Vgs(th) values (such as 2.4V or 2.5V) will turn on at lower gate voltages than the original 4V specification. This is generally compatible with standard PWM controller outputs. Verify that your gate drive circuit can supply the required gate voltage for the substitute part.

Q: Why is the IRFR1205 listed as obsolete?

A: Obsolete status indicates that the manufacturer has discontinued production and will not accept new orders. Substitute parts with active status ensure long-term availability and continued manufacturing support.

Q: What is the difference between Tc (case temperature) and Ta (ambient temperature) current ratings?

A: Tc (case temperature) ratings assume the device case is maintained at 25°C through adequate heat sinking. Ta (ambient temperature) ratings assume operation in free air without heat sinking. For thermal design purposes, use the Tc rating when the device is mounted on a PCB with copper area for heat dissipation.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance status. The original IRFR1205 is RoHS non-compliant. Substitution is necessary for applications requiring RoHS compliance.

Q: What is gate charge (Qg), and how does it affect circuit design?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. The IRFR1205 requires 65nC at 10V. Substitute parts with lower gate charge values (such as 31nC or 39nC) require less gate drive current and may switch faster. Higher gate charge values require more gate drive current but do not prevent substitution if your gate driver can supply the required current.

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