IRFR024PBF N-Channel MOSFET 60V 14A DPAK Equivalent & Substitute Parts

Part Overview

The IRFR024PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage and 14A continuous drain current in a surface mount DPAK package. This device is classified as Active product status with full RoHS3 compliance and unlimited moisture sensitivity level (MSL 1). The IRFR024PBF serves in switching and amplification applications requiring moderate voltage and current handling in compact surface mount form factors. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters while maintaining compatible packaging and thermal characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	14	A (Tc)
On-Resistance (Rds On) @ 10V	100	mOhm @ 8.4A, 10V
Gate Threshold Voltage (Vgs(th))	4	V @ 250µA
Gate Charge (Qg) @ 10V	25	nC
Input Capacitance (Ciss) @ 25V	640	pF
Power Dissipation (Max)	2.5 (Ta), 42 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-252-3, DPAK	Surface Mount
Gate Voltage (Vgs) Max	±20	V

Substitute Part Grouping Explanation

Substitute parts for the IRFR024PBF are selected based on the following critical parameters that determine functional compatibility:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Minimum 60V to maintain voltage rating equivalence
Continuous Drain Current (Id): Minimum 11A to support primary application requirements
Package Type: TO-252-3 DPAK surface mount configuration
Gate Voltage (Vgs) Rating: ±16V or ±20V compatibility
Operating Temperature Range: Minimum -55°C to 150°C

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Lower values improve switching speed and reduce drive requirements
Input Capacitance (Ciss): Lower values reduce gate drive power
Power Dissipation: Thermal capability at case temperature (Tc) determines application suitability

Substitutes are grouped into two categories: direct equivalents (matching Vdss and Id specifications) and functional alternatives (meeting or exceeding electrical requirements within acceptable parameter variance).

Parameter Comparison

Parameter	IRFR024PBF (Main)	FQD13N06LTM	HUF76407D3ST	IRFR024NTRLPBF	IRFR024NTRPBF	RFD3055LESM9A	STD12NF06T4
Manufacturer	Vishay Siliconix	onsemi	onsemi	Infineon	Infineon	onsemi	STMicroelectronics
Vdss (V)	60	60	60	55	55	60	60
Id @ 25°C (A)	14	11	12	17	17	11	12
Rds On @ 10V (mOhm)	100 @ 8.4A	115 @ 5.5A	92 @ 13A	75 @ 10A	75 @ 10A	107 @ 8A, 5V	100 @ 6A
Vgs(th) (V)	4 @ 250µA	2.5 @ 250µA	3 @ 250µA	4 @ 250µA	4 @ 250µA	3 @ 250µA	4 @ 250µA
Qg @ 10V (nC)	25	6.4	11.3	20	20	11.3	12
Ciss @ 25V (pF)	640	350	350	370	370	350	315
Power Dissipation Tc (W)	42	28	38	45	45	38	30
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK	TO-252-3 DPAK
Product Status	Active	Active	Active	Not For New Designs	Active	Active	Active
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes	Yes	Yes
Vgs Max (V)	±20	±20	±16	±20	±20	±16	±20

Engineering Selection Recommendations

Primary Substitutes (Active Product Status, Full Compatibility):

IRFR024NTRPBF (Infineon Technologies) is the preferred substitute when higher current capacity and improved thermal performance are acceptable. This device provides 17A continuous drain current versus 14A in the IRFR024PBF, with lower on-resistance (75 mOhm vs. 100 mOhm) and extended operating temperature range to 175°C. The IRFR024NTRPBF maintains identical gate threshold voltage and maximum gate voltage specifications. Product status is Active with full RoHS3 compliance. Inventory availability is 205,200 units. This substitute is suitable for applications requiring enhanced current handling and thermal margin.

STD12NF06T4 (STMicroelectronics) provides equivalent voltage and current ratings (60V, 12A) with matching on-resistance characteristics (100 mOhm @ 10V). This device features lower gate charge (12 nC vs. 25 nC) and reduced input capacitance (315 pF vs. 640 pF), resulting in faster switching response and reduced gate drive power requirements. Operating temperature range extends to 175°C. Product status is Active with RoHS3 compliance. This substitute is appropriate for applications prioritizing switching speed and gate drive efficiency.

HUF76407D3ST (onsemi UltraFET series) offers 60V, 12A ratings with superior on-resistance (92 mOhm @ 13A) and extended operating temperature to 175°C. Gate charge is 11.3 nC with input capacitance of 350 pF. Power dissipation capability reaches 38W at case temperature. Product status is Active with RoHS3 compliance. This substitute is suitable for high-efficiency switching applications.

Secondary Substitutes (Current Derating Required):

FQD13N06LTM (onsemi QFET series) and RFD3055LESM9A (onsemi) both provide 60V ratings with 11A continuous drain current, representing a 21% current reduction from the IRFR024PBF specification. Both devices feature significantly lower gate charge (6.4 nC and 11.3 nC respectively) and reduced input capacitance. These substitutes are suitable only for applications where 11A current capacity is sufficient. Product status is Active with RoHS3 compliance for both devices.

Obsolete/Restricted Substitute:

IRFR024NTRLPBF (Infineon Technologies) is marked "Not For New Designs" and carries Vdss rating of 55V, which is below the 60V specification of the IRFR024PBF. This device is not recommended for new circuit designs despite providing 17A current capacity and superior on-resistance characteristics.

Selection Criteria Summary:

For direct replacement with enhanced performance: IRFR024NTRPBF
For switching speed optimization: STD12NF06T4
For thermal performance: HUF76407D3ST
For current-limited applications: FQD13N06LTM or RFD3055LESM9A
Avoid: IRFR024NTRLPBF (obsolete status and reduced voltage rating)

Frequently Asked Questions (FAQ)

Q: Can FQD13N06LTM replace IRFR024PBF in all applications?

A: FQD13N06LTM provides 11A continuous drain current compared to 14A in the IRFR024PBF. This represents a 21% current reduction. Substitution is valid only if the application circuit operates at or below 11A. Verify actual circuit current requirements before selection.

Q: What is the primary advantage of IRFR024NTRPBF over IRFR024PBF?

A: IRFR024NTRPBF provides higher continuous drain current (17A vs. 14A), lower on-resistance (75 mOhm vs. 100 mOhm), and extended operating temperature range (-55°C to 175°C vs. -55°C to 150°C). These characteristics result in improved thermal performance and current handling capacity.

Q: Why does STD12NF06T4 have lower gate charge than IRFR024PBF?

A: Gate charge (Qg) is determined by device geometry and oxide thickness. STD12NF06T4 exhibits 12 nC gate charge versus 25 nC in IRFR024PBF. Lower gate charge reduces the charge required to switch the device on and off, resulting in faster switching transitions and reduced gate driver power consumption.

Q: Are all substitute parts available in the same DPAK package?

A: Yes. All listed substitute parts use TO-252-3 DPAK surface mount packaging, ensuring mechanical and thermal interface compatibility with IRFR024PBF PCB layouts.

Q: What does "Not For New Designs" status mean for IRFR024NTRLPBF?

A: This designation indicates the manufacturer (Infineon) has discontinued active development and support for this part number. While existing inventory may be available, the part is not recommended for new circuit designs. Use IRFR024NTRPBF (Active status) as the preferred alternative.

Q: How does input capacitance (Ciss) affect circuit performance?

A: Input capacitance determines the charge storage at the gate-source interface. Lower Ciss values (e.g., 315 pF in STD12NF06T4 vs. 640 pF in IRFR024PBF) reduce gate drive power requirements and enable faster switching transitions. This is particularly important in high-frequency switching applications.

Q: Can HUF76407D3ST be used in applications with operating temperatures above 150°C?

A: HUF76407D3ST is rated for operating temperatures up to 175°C junction temperature, compared to 150°C maximum for IRFR024PBF. This extended range allows operation in higher ambient temperature environments or applications with elevated thermal stress.

Q: What is the significance of Rds On (on-resistance) in MOSFET selection?

A: On-resistance determines power dissipation during conduction. Lower Rds On values reduce I²R losses. IRFR024NTRPBF (75 mOhm) dissipates less power than IRFR024PBF (100 mOhm) at equivalent current levels, resulting in lower junction temperatures and improved thermal margin.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification, meeting environmental and hazardous substance restrictions equivalent to the IRFR024PBF.

Q: What is the difference between Vdss 55V and 60V ratings?

A: Vdss (drain-to-source voltage) is the maximum voltage the device can withstand between drain and source terminals. A 55V rated device (IRFR024NTRLPBF) cannot safely operate at 60V, making it unsuitable as a direct replacement for 60V-rated applications. Always match or exceed the voltage rating of the original part.

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