IRFR024NPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFR024NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 17A continuous drain current in a Surface Mount TO-252AA (DPAK) package. This device is part of the HEXFET® series and is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substitute parts are selected based on matching or exceeding critical electrical parameters: drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, gate threshold voltage, and identical or compatible packaging. All candidates maintain N-Channel MOSFET topology with Surface Mount DPAK configuration and equivalent thermal performance ranges.

Key Parameters

Parameter	IRFR024NPBF Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	55	V
Current - Continuous Drain (Id) @ 25°C	17	A (Tc)
Rds On (Max) @ Id, Vgs	75	mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	370	pF @ 25V
Power Dissipation (Max)	45	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts are organized into two functional categories based on electrical parameter alignment with the IRFR024NPBF:

Category A: Direct Electrical Equivalents (Vdss ≥ 55V, Id ≥ 17A)

These parts maintain or exceed the original voltage and current ratings, ensuring drop-in compatibility for applications requiring the full performance envelope of the IRFR024NPBF. Parts in this category include NTD20N06T4G, RFD12N06RLESM9A, and IRFR024PBF variants.

Category B: Functional Alternatives (Vdss ≥ 55V, Id ≥ 12A)

These parts meet or exceed the voltage rating with slightly reduced current capacity but maintain sufficient performance for many applications. Parts include STD12NF06T4, AOD444, and PJD11N06A_L2_00001.

Category C: Enhanced Voltage Rating (Vdss ≥ 100V)

DMN10H099SK3-13 provides higher voltage capability (100V) with matched current rating (17A), suitable for applications requiring increased voltage margin.

Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 55V
Continuous Drain Current (Id): Minimum 12A at 25°C
On-Resistance (Rds On): Maximum 100mOhm @ 10V
Gate Threshold Voltage (Vgs(th)): 2.5V to 4V @ 250µA
Package: TO-252-3 DPAK (2 Leads + Tab), SC-63
Technology: N-Channel MOSFET (Metal Oxide)
Operating Temperature: -55°C to 150°C minimum

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Temp Range (°C)	Status
IRFR024NPBF	Infineon	55	17 (Tc)	75 @ 10A, 10V	4 @ 250µA	20 @ 10V	370 @ 25V	45 (Tc)	-55 to 175	Discontinued
NTD20N06T4G	onsemi	60	20 (Ta)	46 @ 10A, 10V	4 @ 250µA	30 @ 10V	1015 @ 25V	60 (Tj)	-55 to 175	Active
RFD12N06RLESM9A	onsemi	60	18 (Tc)	63 @ 18A, 10V	3 @ 250µA	15 @ 10V	485 @ 25V	49 (Tc)	-55 to 175	Active
AOD444	Alpha & Omega Semiconductor	60	12 (Tc)	60 @ 12A, 10V	3 @ 250µA	10 @ 10V	540 @ 30V	20 (Tc)	-55 to 175	Active
DMN10H099SK3-13	Diodes Incorporated	100	17 (Tc)	80 @ 3.3A, 10V	3 @ 250µA	25.2 @ 10V	1172 @ 50V	34 (Tc)	-55 to 150	Active
IRFR024PBF	Vishay Siliconix	60	14 (Tc)	100 @ 8.4A, 10V	4 @ 250µA	25 @ 10V	640 @ 25V	42 (Tc)	-55 to 150	Active
IRFR024TRLPBF	Vishay Siliconix	60	14 (Tc)	100 @ 8.4A, 10V	4 @ 250µA	25 @ 10V	640 @ 25V	42 (Tc)	-55 to 150	Active
IRFR024TRPBF	Vishay Siliconix	60	14 (Tc)	100 @ 8.4A, 10V	4 @ 250µA	25 @ 10V	640 @ 25V	42 (Tc)	-55 to 150	Active
IRFR024TRR	Vishay Siliconix	60	14 (Tc)	100 @ 8.4A, 10V	4 @ 250µA	25 @ 10V	640 @ 25V	42 (Tc)	-55 to 150	Active
PJD11N06A_L2_00001	Panjit International	60	11 (Tc)	75 @ 6A, 10V	2.5 @ 250µA	9.3 @ 10V	509 @ 15V	25 (Tc)	-55 to 150	Active
STD12NF06T4	STMicroelectronics	60	12 (Tc)	100 @ 6A, 10V	4 @ 250µA	12 @ 10V	315 @ 25V	30 (Tc)	-55 to 175	Active

Engineering Selection Recommendations

Primary Recommendation: NTD20N06T4G (onsemi)

The NTD20N06T4G provides the closest electrical match to the IRFR024NPBF with superior current rating (20A vs. 17A), improved on-resistance (46mOhm vs. 75mOhm), and higher voltage margin (60V vs. 55V). Active product status with ROHS3 compliance and unlimited MSL rating ensures long-term availability and regulatory compliance. Identical operating temperature range (-55°C to 175°C) and DPAK packaging enable direct substitution.

Secondary Recommendation: RFD12N06RLESM9A (onsemi, UltraFET™ Series)

The RFD12N06RLESM9A meets the 17A current requirement with 18A rating and provides superior on-resistance (63mOhm) and lower gate charge (15nC). Active status with ROHS3 compliance. Operating temperature range matches the original (-55°C to 175°C). Suitable for applications where gate charge minimization is beneficial.

Alternative for Current-Constrained Applications: STD12NF06T4 (STMicroelectronics, STripFET™ II)

The STD12NF06T4 provides 12A continuous current with 60V rating and extended operating temperature range (-55°C to 175°C). ROHS3 compliant with active status. Recommended where current requirements are ≤12A and cost optimization is prioritized.

Higher Voltage Margin Option: DMN10H099SK3-13 (Diodes Incorporated)

The DMN10H099SK3-13 offers 100V rating with matched 17A current capability, providing increased voltage safety margin for applications subject to transient overvoltage. Active status with ROHS3 compliance. Operating temperature range limited to -55°C to 150°C.

Packaging Considerations:

All recommended substitutes maintain TO-252-3 DPAK (2 Leads + Tab) SC-63 package compatibility. Verify tape & reel (TR) or cut tape (CT) availability based on procurement requirements. IRFR024PBF, IRFR024TRLPBF, and IRFR024TRPBF variants are available in alternative packaging formats (Tube, Tape & Reel) from Vishay Siliconix but feature reduced current rating (14A) and higher on-resistance (100mOhm).

Compliance Status:

All recommended parts maintain ROHS3 compliance and MSL 1 (Unlimited) rating. IRFR024TRR is RoHS non-compliant and should be avoided for new designs requiring regulatory compliance.

Frequently Asked Questions (FAQ)

Q1: Can IRFR024PBF directly replace IRFR024NPBF?

IRFR024PBF shares identical base electrical specifications with IRFR024NPBF but features reduced continuous drain current (14A vs. 17A) and higher on-resistance (100mOhm vs. 75mOhm). Substitution is valid only for applications requiring ≤14A continuous current. Both parts are available in DPAK packaging with identical gate threshold voltage (4V @ 250µA) and maximum gate voltage (±20V).

Q2: What is the primary advantage of NTD20N06T4G over IRFR024NPBF?

NTD20N06T4G provides superior current handling (20A vs. 17A), significantly lower on-resistance (46mOhm vs. 75mOhm at 10V), and higher voltage rating (60V vs. 55V). These improvements reduce power dissipation and thermal stress in high-current applications. Both parts maintain identical operating temperature range (-55°C to 175°C) and DPAK packaging.

Q3: Are all substitute parts ROHS3 compliant?

All recommended substitute parts are ROHS3 compliant except IRFR024TRR, which is RoHS non-compliant. For new designs and applications requiring regulatory compliance, select from NTD20N06T4G, RFD12N06RLESM9A, STD12NF06T4, DMN10H099SK3-13, IRFR024PBF, IRFR024TRLPBF, IRFR024TRPBF, AOD444, or PJD11N06A_L2_00001.

Q4: Which substitute offers the lowest gate charge?

AOD444 provides the lowest gate charge (10nC @ 10V), followed by PJD11N06A_L2_00001 (9.3nC @ 10V). Lower gate charge reduces driver power consumption and enables faster switching transitions. However, AOD444 is limited to 12A continuous current and PJD11N06A_L2_00001 to 11A, making them suitable only for lower-current applications.

Q5: What is the impact of higher input capacitance in substitute parts?

NTD20N06T4G and DMN10H099SK3-13 feature higher input capacitance (1015pF and 1172pF respectively) compared to IRFR024NPBF (370pF). Higher capacitance increases gate charge and driver power consumption but does not affect DC switching performance. For applications with high switching frequency or limited driver capability, select parts with lower capacitance such as STD12NF06T4 (315pF) or RFD12N06RLESM9A (485pF).

Q6: Can IRFR024NPBF be used in applications rated for 60V or higher?

IRFR024NPBF is rated for maximum 55V drain-to-source voltage. Use in 60V or higher applications requires substitution with parts rated ≥60V such as NTD20N06T4G, RFD12N06RLESM9A, STD12NF06T4, or DMN10H099SK3-13 (100V). Exceeding voltage rating voids device reliability and may cause catastrophic failure.

Q7: Which substitute offers the best thermal performance?

NTD20N06T4G provides the highest power dissipation rating (60W @ Tj) with the lowest on-resistance (46mOhm), resulting in minimal heat generation at rated current. RFD12N06RLESM9A offers 49W dissipation with 63mOhm on-resistance. Both are superior to IRFR024NPBF (45W, 75mOhm) for thermal-constrained applications.

Q8: Are tape & reel packaging options available for all substitutes?

Tape & Reel (TR) packaging is available for NTD20N06T4G, RFD12N06RLESM9A, IRFR024TRLPBF, IRFR024TRPBF, STD12NF06T4, and PJD11N06A_L2_00001. Cut Tape (CT) & Digi-Reel® options are available for RFD12N06RLESM9A, AOD444, DMN10H099SK3-13, and STD12NF06T4. Verify packaging availability with supplier before procurement.

Q9: What is the operating temperature difference between substitutes?

Most substitutes maintain -55°C to 175°C operating range matching IRFR024NPBF. DMN10H099SK3-13 and IRFR024PBF variants are limited to -55°C to 150°C. For applications requiring full -55°C to 175°C range, select NTD20N06T4G, RFD12N06RLESM9A, STD12NF06T4, or PJD11N06A_L2_00001.

Q10: How does gate threshold voltage variation affect circuit design?

IRFR024NPBF specifies Vgs(th) maximum of 4V @ 250µA. Substitutes range from 2.5V (PJD11N06A_L2_00001, AOD444, DMN10H099SK3-13) to 4V (IRFR024NPBF, STD12NF06T4, IRFR024 variants). Lower threshold voltage enables operation with lower gate drive voltage but may increase susceptibility to parasitic turn-on. Verify gate driver voltage compatibility before substitution.

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