IRFPS40N60K N-Channel 600V 40A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPS40N60K is an N-Channel 600V 40A power MOSFET manufactured by Vishay Siliconix in the SUPER-247™ (TO-274AA) package. This device is classified as obsolete, indicating that the original manufacturer has discontinued production. The part operates at a maximum junction temperature of 150°C and dissipates up to 570W, making it suitable for high-power switching applications requiring robust thermal performance and high current handling capability.

Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	40	A
On-State Resistance (Rds On) @ 24A, 10V	130	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	330	nC
Input Capacitance (Ciss) @ 25V	7970	pF
Maximum Gate Voltage (Vgs)	±30	V
Power Dissipation (Max)	570	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole
Package	SUPER-247™ (TO-274AA)
RoHS Status	Non-compliant

Substitute Part Grouping Explanation

Substitution of the IRFPS40N60K is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 40A or greater
On-State Resistance (Rds On): 130mOhm or lower for equivalent performance
Gate Threshold Voltage (Vgs(th)): Compatible gate drive requirements
Operating Temperature Range: -55°C to 150°C minimum
Mounting Type: Through Hole configuration
Package Compatibility: SUPER-247™ or equivalent TO-247 variants

Substitution Logic: Parts are grouped into three categories based on their relationship to the main part:

Parametric Equivalent: Identical electrical specifications and package type (SIHFPS40N60K-GE3)
Functional Substitutes with Trade-offs: Parts meeting voltage and current requirements with acceptable variations in Rds On, gate charge, or power dissipation
Higher-Performance Alternatives: Parts exceeding the original specifications, suitable for applications requiring enhanced thermal or electrical performance

Substitutes are valid only when all critical parameters remain within acceptable operating ranges for the target application. Package variants (TO-247-3 vs. SUPER-247™) are considered compatible due to mechanical and electrical pin compatibility in through-hole mounting configurations.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Power Diss. (W)	Package	Product Status	RoHS
IRFPS40N60K	Vishay Siliconix	600	40	130 @ 24A	330	5	570	SUPER-247™	Obsolete	Non-compliant
SIHFPS40N60K-GE3	Vishay Siliconix	600	40	130 @ 24A	330	5	570	SUPER-247™	Active	ROHS3 Compliant
IPW60R099C6FKSA1	Infineon Technologies	600	37.9	99 @ 18.1A	119	3.5	278	TO-247-3	Not For New Designs	ROHS3 Compliant
IPW60R099CPAFKSA1	Infineon Technologies	600	31	105 @ 18A	80	3.5	255	TO-247-3	Active	ROHS3 Compliant
IPW60R099CPFKSA1	Infineon Technologies	650	31	99 @ 18A	80	3.5	255	TO-247-3	Not For New Designs	ROHS3 Compliant
IPW60R125C6FKSA1	Infineon Technologies	600	30	125 @ 14.5A	96	3.5	219	TO-247-3	Not For New Designs	ROHS3 Compliant
IXFR64N60Q3	IXYS	600	42	104 @ 32A	190	6.5	568	ISOPLUS247™	Active	ROHS3 Compliant
IXFX44N60	IXYS	600	44	130 @ 22A	330	4.5	560	PLUS247™-3	Active	ROHS3 Compliant
IXFX64N60P3	IXYS	600	64	95 @ 32A	145	5	1130	PLUS247™-3	Active	ROHS3 Compliant
SPW32N50C3FKSA1	Infineon Technologies	560	32	110 @ 20A	170	3.9	284	TO-247-3	Active	ROHS3 Compliant
SPW35N60C3FKSA1	Infineon Technologies	650	34.6	100 @ 21.9A	200	3.9	313	TO-247-3	Active	ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

SIHFPS40N60K-GE3 is the direct parametric equivalent to IRFPS40N60K. This part maintains identical electrical specifications (600V, 40A, 130mOhm Rds On, 330nC gate charge) and package configuration. The primary advantage is active product status with ROHS3 compliance, addressing the obsolescence and regulatory compliance limitations of the original part. This selection is appropriate for applications requiring no design modification.

Active Product Alternatives with Acceptable Trade-offs:

IPW60R099CPAFKSA1 (Infineon, Active, AEC-Q101 Automotive Qualified) provides 600V operation at 31A continuous current with 105mOhm Rds On. This part is suitable for applications where current requirements are 31A or lower. The lower gate charge (80nC vs. 330nC) reduces gate drive power requirements. Automotive qualification (AEC-Q101) provides additional reliability assurance for mission-critical applications.

IXFR64N60Q3 (IXYS, Active) delivers 600V at 42A with 104mOhm Rds On and 568W power dissipation, closely matching the original part's thermal and current capabilities. The ISOPLUS247™ package provides equivalent through-hole mounting compatibility. This selection is appropriate for applications requiring performance parity with the original design.

IXFX44N60 (IXYS, Active) operates at 600V with 44A continuous current and 130mOhm Rds On, matching the original part's on-state resistance. The 560W power dissipation and 330nC gate charge align with the original specifications. This part is suitable for direct substitution in existing designs.

IXFX64N60P3 (IXYS, Active) provides enhanced performance with 600V at 64A and 95mOhm Rds On, delivering superior current handling and reduced conduction losses. The 1130W power dissipation capability supports higher thermal loads. This selection is appropriate for applications requiring performance upgrade or thermal margin improvement.

Voltage-Rated Alternatives:

SPW35N60C3FKSA1 (Infineon, Active) operates at 650V with 34.6A and 100mOhm Rds On. The higher voltage rating provides additional design margin for transient overvoltage conditions. This part is suitable for applications where 600V operation is marginal or where system voltage tolerance requires higher rating.

SPW32N50C3FKSA1 (Infineon, Active) operates at 560V with 32A and 110mOhm Rds On. This part is suitable only for applications where the maximum system voltage does not exceed 560V, as the lower voltage rating reduces design margin compared to the original 600V specification.

Compliance Considerations:

All recommended active substitutes carry ROHS3 compliance, addressing regulatory requirements that the original non-compliant part cannot satisfy. Selection of compliant parts is mandatory for new production designs and applications subject to environmental regulations.

Frequently Asked Questions (FAQ)

Q: Can SIHFPS40N60K-GE3 be used as a direct replacement for IRFPS40N60K without circuit modification?

A: Yes. SIHFPS40N60K-GE3 is a parametric equivalent with identical electrical specifications and package configuration. No circuit modification is required. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. Non-compliant).

Q: What is the difference between SUPER-247™ and TO-247-3 packages?

A: Both packages are through-hole mounted with compatible pin configurations and mechanical footprints. SUPER-247™ (TO-274AA) and TO-247-3 are functionally interchangeable in PCB designs. The primary difference is the specific package designation used by different manufacturers. Mechanical and electrical compatibility is maintained across these variants.

Q: Can IPW60R099CPAFKSA1 replace IRFPS40N60K in a 40A application?

A: IPW60R099CPAFKSA1 is rated for 31A continuous current, which is below the 40A requirement of the original part. This part is not suitable for applications requiring the full 40A capability. Use IXFR64N60Q3, IXFX44N60, or IXFX64N60P3 for 40A or higher current applications.

Q: What is the significance of the lower gate charge in Infineon CoolMOS™ parts?

A: Lower gate charge (80-119nC vs. 330nC) reduces the energy required to switch the transistor on and off, resulting in lower gate drive power consumption and potentially faster switching transitions. This is a performance advantage but does not affect substitution compatibility if the gate drive circuit is designed for the original part's specifications.

Q: Is AEC-Q101 qualification required for my application?

A: AEC-Q101 qualification is required only for automotive applications subject to automotive reliability standards. IPW60R099CPAFKSA1 carries this qualification. For non-automotive applications, AEC-Q101 qualification is not necessary but provides additional assurance of manufacturing quality and reliability testing.

Q: Can I use SPW32N50C3FKSA1 (560V) instead of a 600V part?

A: SPW32N50C3FKSA1 is rated for 560V maximum drain-source voltage. This part is suitable only if the maximum system voltage does not exceed 560V. For systems designed for 600V operation, use parts with 600V or higher ratings to maintain design margin and prevent overstress conditions.

Q: What is the thermal advantage of IXFX64N60P3 over IRFPS40N60K?

A: IXFX64N60P3 dissipates up to 1130W compared to 570W for IRFPS40N60K. This higher power dissipation capability allows operation at higher current levels or provides thermal margin for continuous operation at rated current. The lower on-state resistance (95mOhm vs. 130mOhm) also reduces conduction losses.

Q: Are all substitute parts RoHS compliant?

A: All recommended active substitute parts carry ROHS3 compliance. The original IRFPS40N60K is RoHS non-compliant. For new production designs and applications subject to environmental regulations, selection of RoHS-compliant parts is mandatory.

Q: What is the difference between "Active" and "Not For New Designs" product status?

A: "Active" status indicates the manufacturer continues production and supports the part for new designs. "Not For New Designs" indicates the manufacturer is phasing out the part but may continue limited production for existing customers. For new designs, select parts with "Active" status to ensure long-term availability and manufacturer support.

Q: Can I parallel multiple lower-current parts to achieve 40A capability?

A: Paralleling MOSFETs is not recommended without detailed circuit analysis and thermal management design. Gate charge, threshold voltage, and on-state resistance variations between parts create current sharing imbalances. Use single parts rated for the required current instead.

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