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IRFPS3810 Equivalent & Substitute Parts
Part Overview
The IRFPS3810 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 170A continuous drain current in the SUPER-247™ (TO-274AA) package. This device is part of Infineon Technologies' HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent substitute parts with active product status are necessary for new designs and ongoing production requirements. The substitute part maintains the same voltage rating and similar current handling capability while offering improved electrical characteristics and current availability.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 170 | A (Tc) |
| On-State Resistance (Rds On Max) @ Id, Vgs | 9 | mOhm @ 100A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 5 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 390 | nC @ 10V |
| Power Dissipation (Max) | 580 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | SUPER-247™ (TO-274AA) | Through Hole |
Substitute Part Grouping Explanation
Substitution of the IRFPS3810 is based on the following critical electrical and mechanical parameters:
Voltage Rating Compatibility: The substitute part must maintain the same 100V Vdss rating to ensure safe operation within the same circuit voltage envelope.
Current Handling: The substitute part must support continuous drain current at or above 170A to fulfill the same load requirements.
Package Type: The substitute part must use a compatible through-hole package. The IRFP4468PBF uses TO-247AC, which is mechanically and electrically compatible with the original TO-274AA package for board-level integration.
Operating Temperature Range: The substitute part must support the full -55°C to 175°C operating range to maintain thermal performance across all application conditions.
Technology Platform: Both parts are N-Channel MOSFETs using metal-oxide technology within the HEXFET® series, ensuring consistent switching characteristics and gate drive requirements.
The IRFP4468PBF qualifies as a direct substitute based on these parameters while offering improved electrical performance and active product status.
Parameter Comparison
| Parameter | IRFPS3810 | IRFP4468PBF | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | — |
| FET Type | N-Channel | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | — |
| Series | HEXFET® | HEXFET® | — |
| Drain-to-Source Voltage (Vdss) | 100 | 100 | V |
| Continuous Drain Current (Id) @ 25°C | 170 | 195 | A (Tc) |
| Drive Voltage (Max Rds On) | 10 | 10 | V |
| On-State Resistance (Rds On Max) | 9 @ 100A, 10V | 2.6 @ 180A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) | 5 @ 250µA | 4 @ 250µA | V |
| Gate Charge (Qg Max) @ Vgs | 390 @ 10V | 540 @ 10V | nC |
| Power Dissipation (Max) | 580 | 520 | W (Tc) |
| Operating Temperature Range | -55 to 175 | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | Through Hole | — |
| Package / Case | TO-274AA | TO-247-3 | — |
| Product Status | Obsolete | Active | — |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | — |
Engineering Selection Recommendations
Product Status Consideration: The IRFPS3810 is classified as obsolete, which restricts long-term availability and future procurement. The IRFP4468PBF maintains active product status, ensuring continued supply and manufacturing support from Infineon Technologies.
Compliance and Certification: The IRFP4468PBF is ROHS3 compliant, whereas the IRFPS3810 is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, the IRFP4468PBF is the appropriate selection.
Electrical Performance: The IRFP4468PBF provides superior on-state resistance (2.6 mOhm at 180A versus 9 mOhm at 100A), resulting in lower conduction losses and reduced thermal dissipation. The higher continuous drain current rating (195A versus 170A) provides additional design margin.
Package Compatibility: Both devices use compatible through-hole packages (TO-274AA and TO-247AC). The TO-247AC package used by the IRFP4468PBF is a standard industry package with equivalent mechanical and thermal characteristics, allowing direct board-level substitution.
Thermal Performance: Both devices support the full -55°C to 175°C operating temperature range. The IRFP4468PBF's lower on-state resistance contributes to reduced junction temperature rise under identical load conditions.
Frequently Asked Questions (FAQ)
Q: Can the IRFP4468PBF directly replace the IRFPS3810 in existing designs?
A: Yes. Both devices share identical voltage ratings (100V Vdss), compatible current ratings (195A versus 170A), matching operating temperature ranges, and compatible through-hole packages. The IRFP4468PBF's improved electrical characteristics make it a direct substitute.
Q: What are the package differences between TO-274AA and TO-247AC?
A: Both are through-hole packages with three leads (Gate, Drain, Source). The TO-247AC is the industry-standard variant of the TO-247 family. Pin assignments and mounting hole patterns are compatible, allowing direct PCB substitution without layout modifications.
Q: Does the higher gate charge of the IRFP4468PBF (540 nC versus 390 nC) affect gate drive circuit design?
A: Gate charge is provided for reference. Both devices operate with 10V drive voltage. Gate drive circuits designed for the IRFPS3810 will function with the IRFP4468PBF. The higher gate charge reflects the larger die size and higher current capability of the substitute part.
Q: Why is RoHS compliance important for this substitution?
A: RoHS3 compliance is required for products sold in regulated markets and for customers with environmental or procurement standards. The IRFP4468PBF's ROHS3 compliance eliminates potential supply chain restrictions and regulatory concerns associated with the non-compliant IRFPS3810.
Q: What is the impact of lower on-state resistance on thermal design?
A: Lower on-state resistance (2.6 mOhm versus 9 mOhm) reduces I²R losses during conduction. This results in lower junction temperature rise and reduced heatsink requirements. Existing thermal designs will operate with improved margins when using the IRFP4468PBF.
Q: Are there any gate threshold voltage differences to consider?
A: The IRFP4468PBF has a lower gate threshold voltage (4V versus 5V at 250µA). Both values fall within standard gate drive voltage ranges (10V). This difference does not affect circuit compatibility or switching performance.
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