IRFPS37N50APBF N-Channel 500V 36A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPS37N50APBF is an N-Channel power MOSFET manufactured by Infineon Technologies, designed for high-voltage switching applications requiring 500V drain-to-source voltage capability with 36A continuous drain current. The device is housed in a SUPER-247™ (TO-274AA) through-hole package and delivers 446W maximum power dissipation at the case temperature.

This part is currently discontinued at DiGi Electronics. Identifying qualified substitute components is essential for design continuity, procurement flexibility, and long-term supply chain management. Substitute parts must maintain identical electrical performance and mechanical compatibility to ensure direct replacement without circuit redesign.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	500	V
Continuous Drain Current (Id) @ 25°C	36	A (Tc)
On-State Resistance (Rds On Max) @ 22A, 10V	130	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	180	nC
Input Capacitance (Ciss Max) @ 25V	5579	pF
Maximum Gate Voltage (Vgs Max)	±30	V
Power Dissipation (Max) @ Tc	446	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	SUPER-247™ (TO-274AA)	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFPS37N50APBF are identified based on strict electrical and mechanical parameter matching. The following criteria determine substitution eligibility:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 500V
Continuous Drain Current (Id): 36A @ 25°C
On-State Resistance (Rds On): 130 mOhm @ 22A, 10V
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
Gate Charge (Qg): 180 nC @ 10V
Input Capacitance (Ciss): 5579 pF @ 25V
Maximum Gate Voltage (Vgs): ±30V
Power Dissipation: 446W @ Tc
Operating Temperature: -55°C to 150°C
Package: SUPER-247™ (TO-274AA) through-hole mounting
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

All parameters must match exactly to qualify as a direct substitute. No parameter deviation is permitted for functional equivalence.

Parameter Comparison

Parameter	IRFPS37N50APBF (Infineon)	SIHFPS37N50A-GE3 (Vishay Siliconix)	Match Status
Drain to Source Voltage (Vdss)	500 V	500 V	✓ Match
Continuous Drain Current (Id) @ 25°C	36 A (Tc)	36 A (Tc)	✓ Match
On-State Resistance (Rds On Max) @ 22A, 10V	130 mOhm	130 mOhm	✓ Match
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4 V	4 V	✓ Match
Gate Charge (Qg Max) @ 10V	180 nC	180 nC	✓ Match
Input Capacitance (Ciss Max) @ 25V	5579 pF	5579 pF	✓ Match
Maximum Gate Voltage (Vgs Max)	±30 V	±30 V	✓ Match
Power Dissipation (Max) @ Tc	446 W	446 W	✓ Match
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	✓ Match
Package Type	SUPER-247™ (TO-274AA)	SUPER-247™ (TO-274AA)	✓ Match
Mounting Type	Through Hole	Through Hole	✓ Match
FET Type	N-Channel	N-Channel	✓ Match
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	✓ Match
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	✓ Match
REACH Status	REACH Unaffected	REACH Unaffected	✓ Match
ECCN	EAR99	EAR99	✓ Match
HTSUS Code	8541.29.0095	8541.29.0095	✓ Match

Engineering Selection Recommendations

SIHFPS37N50A-GE3 (Vishay Siliconix) qualifies as a direct parametric equivalent to the IRFPS37N50APBF based on complete electrical and mechanical parameter alignment.

Product Status Consideration: The IRFPS37N50APBF is discontinued at DiGi Electronics. The SIHFPS37N50A-GE3 maintains active product status, ensuring ongoing availability and manufacturer support.

Compliance & Certification: Both parts maintain identical regulatory compliance:

ROHS3 Compliant
REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

Packaging & Inventory: The SIHFPS37N50A-GE3 is supplied in tube packaging with 1352 units in stock, providing immediate procurement availability for production requirements.

Selection Basis: Component selection is based solely on parametric equivalence, regulatory compliance status, and supply chain availability. No additional technical criteria apply to this substitution.

Frequently Asked Questions (FAQ)

Q: Can the SIHFPS37N50A-GE3 replace the IRFPS37N50APBF in existing designs without modification?

A: Yes. All electrical parameters, gate drive characteristics, thermal performance, and mechanical package dimensions are identical. Direct socket substitution is supported without circuit redesign.

Q: Are there any differences in gate drive requirements between these parts?

A: No. Both parts share identical gate threshold voltage (4V @ 250µA), gate charge (180 nC @ 10V), and maximum gate voltage (±30V). Existing gate drive circuits require no adjustment.

Q: What is the significance of the SUPER-247™ (TO-274AA) package?

A: This is a through-hole power package designed for high-current applications. Both parts use identical package geometry, pin configuration, and thermal interface. PCB layouts and mounting hardware are fully compatible.

Q: Do these parts have different thermal characteristics?

A: No. Both parts deliver 446W maximum power dissipation at case temperature and operate across the identical temperature range (-55°C to 150°C junction temperature). Thermal management strategies remain unchanged.

Q: Are there supply chain or lead time differences?

A: The IRFPS37N50APBF is discontinued at DiGi Electronics. The SIHFPS37N50A-GE3 maintains active status with 1352 units in current inventory, providing superior supply chain continuity.

Q: Do regulatory certifications differ between these parts?

A: No. Both parts are ROHS3 compliant, REACH unaffected, and share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Q: What packaging format is the SIHFPS37N50A-GE3 supplied in?

A: The SIHFPS37N50A-GE3 is supplied in tube packaging, standard for through-hole power components. The IRFPS37N50APBF packaging format was not specified in available data.

Q: Are on-state resistance characteristics identical?

A: Yes. Both parts specify 130 mOhm maximum on-state resistance at 22A drain current and 10V gate-source voltage, ensuring identical power loss and thermal performance in switching applications.

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