IRFPS29N60LPBF N-Channel 600V 29A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPS29N60LPBF is an N-Channel 600V 29A MOSFET manufactured by Vishay Siliconix in the SUPER-247™ (TO-274AA) package. This device is rated for 480W power dissipation and operates across the temperature range of -55°C to 150°C. The part is classified as Obsolete, indicating that it is no longer in active production. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing system maintenance and new production builds.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	29	A
On-State Resistance (Rds On) @ 17A, 10V	210	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	220	nC
Input Capacitance (Ciss) @ 25V	6160	pF
Power Dissipation (Max)	480	W
Operating Temperature Range	-55 to 150	°C
Package Type	SUPER-247™ (TO-274AA)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFPS29N60LPBF is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Substitute must equal or exceed 600V
Continuous Drain Current (Id): Substitute must support 29A or higher at 25°C
On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
Operating Temperature Range: Must span -55°C to 150°C minimum

Mechanical Compatibility Criteria:

Mounting Type: Through Hole required
Package Configuration: TO-247 or TO-247-3 packages provide pin-compatible alternatives to SUPER-247™ (TO-274AA)
Lead Configuration: Standard three-lead FET topology

Compliance & Status Criteria:

RoHS3 Compliance: All substitutes must maintain regulatory compliance
Product Status: Active or Last Time Buy status preferred over Obsolete

The substitute parts listed below meet these criteria and are organized by electrical performance and availability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Power Dissipation (W)	Package	Status
IRFPS29N60LPBF	Vishay Siliconix	600	29	210	5	220	480	SUPER-247™ (TO-274AA)	Obsolete
IXFH36N60P	IXYS	600	36	190	5	102	650	TO-247-3	Active
IXFH28N60P3	IXYS	600	28	260	5	50	695	TO-247-3	Active
IXFH26N60P	IXYS	600	26	270	5	72	460	TO-247-3	Active
IXTH30N60L2	IXYS	600	30	240	4.5	335	540	TO-247-3	Active
IXTH26N60P	IXYS	600	26	270	5	72	460	TO-247-3	Active
FCH170N60	Fairchild Semiconductor	600	22	170	3.5	55	227	TO-247-3	Active
IPW60R190C6FKSA1	Infineon Technologies	600	20.2	190	3.5	63	151	TO-247-3	Not For New Designs
R6024KNZ1C9	Rohm Semiconductor	600	24	165	5	45	245	TO-247-3	Obsolete
SPW15N60C3FKSA1	Infineon Technologies	650	15	280	3.9	63	156	TO-247-3	Last Time Buy
SPW16N50C3FKSA1	Infineon Technologies	560	16	280	3.9	66	160	TO-247-3	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for New Designs):

The IXFH36N60P, IXFH28N60P3, and IXTH30N60L2 are the preferred substitutes for the IRFPS29N60LPBF. All three devices are manufactured by IXYS, maintain Active product status, and provide electrical performance that meets or exceeds the original specification. The IXFH36N60P delivers the highest current rating (36A) and power dissipation (650W), making it suitable for applications requiring performance headroom. The IXFH28N60P3 provides near-equivalent current handling (28A) with improved gate charge characteristics (50nC versus 220nC), reducing switching losses. The IXTH30N60L2 offers 30A continuous current with 540W power dissipation and is available in high inventory (5780 units).

Secondary Substitutes (Acceptable for Existing Designs):

The IXFH26N60P and IXTH26N60P are functionally equivalent alternatives with 26A current ratings and 460W power dissipation. Both maintain the 600V Vdss rating and 5V gate threshold voltage, ensuring compatibility with existing gate drive circuits. The FCH170N60 (Fairchild Semiconductor) provides a lower-cost alternative with 22A current rating and superior on-state resistance (170mOhm), though power dissipation is reduced to 227W.

Conditional Substitutes (Limited Application):

The R6024KNZ1C9 (Rohm Semiconductor) is classified as Obsolete and should be avoided for new designs. The IPW60R190C6FKSA1 (Infineon Technologies) carries a "Not For New Designs" status and is not recommended for production applications. The SPW15N60C3FKSA1 and SPW16N50C3FKSA1 have lower current ratings (15A and 16A respectively) and are suitable only for applications with reduced current requirements.

Compliance & Certification:

All recommended substitutes maintain RoHS3 compliance, Moisture Sensitivity Level 1 (Unlimited), and REACH Unaffected status, matching the regulatory profile of the original IRFPS29N60LPBF. All devices operate across the -55°C to 150°C temperature range.

Frequently Asked Questions (FAQ)

Q: Can the IXFH36N60P directly replace the IRFPS29N60LPBF without circuit modifications?

A: The IXFH36N60P is electrically compatible with the IRFPS29N60LPBF across all critical parameters: 600V Vdss, 36A continuous current (exceeds 29A requirement), 5V gate threshold voltage, and -55°C to 150°C operating range. However, the package differs (TO-247-3 versus SUPER-247™ TO-274AA). PCB layout modifications are required to accommodate the different pin configuration. Verify mechanical fit and thermal management before implementation.

Q: What is the difference between IXFH and IXTH series devices?

A: Both IXFH and IXTH series are manufactured by IXYS and share identical electrical specifications for equivalent model numbers. The primary difference is package designation: IXFH devices use TO-247AD (IXFH) packaging, while IXTH devices use TO-247 (IXTH) packaging. Both are through-hole TO-247-3 configurations and are mechanically interchangeable in most applications.

Q: Why does the IXFH28N60P3 have lower gate charge (50nC) compared to the original IRFPS29N60LPBF (220nC)?

A: Gate charge is a device-specific characteristic determined by the internal capacitance and switching characteristics of the MOSFET. The IXFH28N60P3 incorporates Infineon's Polar3™ technology, which reduces gate charge and switching losses compared to earlier generation devices. Lower gate charge results in faster switching transitions and reduced power dissipation in the gate drive circuit. This is an improvement over the original specification.

Q: Is the FCH170N60 suitable for high-current applications?

A: The FCH170N60 is rated for 22A continuous current, which is below the IRFPS29N60LPBF specification of 29A. This device is suitable only for applications with reduced current requirements or as a cost-optimized alternative where the full 29A rating is not required. Verify that the application current does not exceed 22A before selecting this substitute.

Q: What are the thermal implications of switching from IRFPS29N60LPBF to a substitute with different Rds On?

A: On-state resistance (Rds On) directly affects conduction losses and junction temperature rise. The IXFH36N60P has lower Rds On (190mOhm versus 210mOhm), resulting in reduced conduction losses and lower junction temperature. The IXFH26N60P has higher Rds On (270mOhm), which increases conduction losses. Thermal analysis is required to confirm that the substitute device does not exceed the maximum junction temperature (150°C) under worst-case operating conditions.

Q: Can I use SPW15N60C3FKSA1 or SPW16N50C3FKSA1 as substitutes?

A: These devices have significantly lower current ratings (15A and 16A respectively) compared to the IRFPS29N60LPBF (29A). They are not suitable as direct substitutes for applications requiring the full 29A rating. These devices are acceptable only for applications with reduced current requirements or as alternatives in lower-power circuit variants.

Q: What is the significance of "Last Time Buy" status for SPW15N60C3FKSA1?

A: "Last Time Buy" status indicates that the manufacturer has announced end-of-life for this device and will no longer accept new orders after a specified date. Existing inventory may be available, but long-term supply is not guaranteed. This device should not be selected for new designs requiring long-term production support.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance, matching the regulatory status of the original IRFPS29N60LPBF. All devices are also REACH Unaffected and carry Moisture Sensitivity Level 1 (Unlimited), ensuring compatibility with standard manufacturing and storage practices.

Q: What package modifications are required when switching from SUPER-247™ (TO-274AA) to TO-247-3?

A: The SUPER-247™ (TO-274AA) and TO-247-3 packages have different pin configurations and mechanical dimensions. PCB layout changes are required, including modifications to pad spacing, hole diameter, and thermal management features. Consult the device datasheets for detailed package drawings and mechanical specifications before implementing the substitution.

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