IRFPG50 N-Channel 1000V 6.1A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPG50 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 1000V drain-to-source voltage with 6.1A continuous drain current at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is designed for high-voltage switching applications. The IRFPG50 is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and new production requirements. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor while offering active product status and improved availability.

Substiute Parts

IRFPG50

Vishay SiliconixIn Stock: 1867IRFPG50 Datasheet

Current PartRFQ

IRFPG50PBF

Vishay SiliconixIn Stock: 3298IRFPG50PBF Datasheet

Parametric EquivalentRFQ

APT8M100B

Microchip TechnologyIn Stock: 5865APT8M100B Datasheet

MFR RecommendedRFQ

IRFP3306PBF

Infineon TechnologiesIn Stock: 4403IRFP3306PBF Datasheet

MFR RecommendedRFQ

IRFP3710PBF

Infineon TechnologiesIn Stock: 29480IRFP3710PBF Datasheet

MFR RecommendedRFQ

IRFP4310ZPBF

Infineon TechnologiesIn Stock: 16103IRFP4310ZPBF Datasheet

MFR RecommendedRFQ

IRFP4768PBF

Infineon TechnologiesIn Stock: 33705IRFP4768PBF Datasheet

MFR RecommendedRFQ

IXFH6N100Q

IXYSIn Stock: 14151IXFH6N100Q Datasheet

MFR RecommendedRFQ

STW11NK100Z

STMicroelectronicsIn Stock: 2432STW11NK100Z Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFPG50 are classified into two categories based on electrical parameter alignment:

Category 1: Direct Parametric Equivalents Parts that maintain identical or near-identical electrical specifications across all critical parameters: Vdss (1000V), Id (6.1A nominal), Rds On (approximately 2 Ohm), gate charge, and operating temperature range. These parts are pin-compatible and mechanically interchangeable in TO-247-3 packaging.

Category 2: Functional Alternatives Parts that share the same Vdss rating (1000V) and TO-247-3 package but differ in one or more electrical parameters such as continuous drain current, on-state resistance, gate charge, or power dissipation. These parts are suitable for applications where the IRFPG50 specifications exceed system requirements or where enhanced performance characteristics are acceptable.

Key Substitution Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 1000V
• Package Type: TO-247-3 through-hole configuration
• Mounting Type: Through-hole
• FET Type: N-Channel MOSFET
• Operating Temperature: Must support -55°C to 150°C minimum range
• Product Status: Active status preferred for long-term availability

Parameter Comparison

Engineering Selection Recommendations

Primary Recommendation: IRFPG50PBF

The IRFPG50PBF is the direct equivalent of the obsolete IRFPG50. This part maintains identical electrical specifications across all parameters: 1000V Vdss, 6.1A continuous drain current, 2 Ohm on-state resistance, 190 nC gate charge, and 190W power dissipation. The IRFPG50PBF is manufactured by Vishay Siliconix with active product status and ROHS3 compliance. Packaging is supplied in tube format. This part provides a one-to-one replacement with no design modifications required.

Secondary Recommendation: STW11NK100Z

The STW11NK100Z from STMicroelectronics maintains the 1000V Vdss rating and TO-247-3 package. This part offers enhanced performance with 8.3A continuous drain current (36% higher than IRFPG50), reduced on-state resistance of 1.38 Ohm (31% lower), and increased power dissipation capability of 230W. The STW11NK100Z is active, ROHS3 compliant, and operates across the same temperature range. This part is suitable for applications where the IRFPG50 specifications are marginal or where improved thermal performance is beneficial.

Tertiary Recommendation: IXFH6N100Q

The IXFH6N100Q from IXYS maintains 1000V Vdss and 6.0A continuous drain current, closely matching the IRFPG50 current rating. This part features reduced on-state resistance of 1.9 Ohm and significantly lower gate charge of 48 nC (75% reduction), resulting in faster switching characteristics. The IXFH6N100Q is active, ROHS3 compliant, and operates across the same temperature range. This part is suitable for high-frequency switching applications where gate charge minimization is advantageous.

Alternative Consideration: APT8M100B

The APT8M100B from Microchip Technology maintains 1000V Vdss with 8.0A continuous drain current and 1.8 Ohm on-state resistance. This part offers increased power dissipation of 290W and is active with ROHS3 compliance. The APT8M100B is suitable for applications requiring higher current capacity or improved thermal margin.

Lower Voltage Alternatives (Not Recommended for Direct Substitution)

Parts such as IRFP3306PBF (60V), IRFP3710PBF (100V), IRFP4310ZPBF (100V), and IRFP4768PBF (250V) are listed in the substitute database but operate at significantly reduced voltage ratings. These parts are not suitable for direct substitution in applications requiring 1000V blocking capability. These parts are applicable only in circuit redesigns where lower voltage operation is acceptable.

Frequently Asked Questions (FAQ)

Q: Can IRFPG50PBF be used as a direct replacement for IRFPG50?

A: Yes. The IRFPG50PBF is electrically and mechanically identical to the IRFPG50 across all specified parameters. The primary difference is product status (active versus obsolete) and RoHS compliance (ROHS3 compliant versus non-compliant). No circuit modifications are required.

Q: What is the difference between IRFPG50 and STW11NK100Z?

A: Both parts maintain 1000V Vdss and TO-247-3 packaging. The STW11NK100Z offers higher continuous drain current (8.3A versus 6.1A), lower on-state resistance (1.38 Ohm versus 2.0 Ohm), and higher power dissipation capability (230W versus 190W). The STW11NK100Z is suitable for applications where the IRFPG50 current or thermal ratings are insufficient.

Q: Are the lower voltage alternatives (60V, 100V, 250V) suitable replacements?

A: No. Lower voltage rated MOSFETs cannot be substituted for the 1000V IRFPG50 in applications requiring high-voltage blocking. These parts will fail under the specified operating voltage. Lower voltage alternatives are applicable only in circuit redesigns where the application voltage is reduced.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge determines the energy required to switch the MOSFET and influences switching speed. The IXFH6N100Q features significantly lower gate charge (48 nC versus 190 nC), enabling faster switching transitions and reduced switching losses in high-frequency applications. The IRFPG50PBF maintains identical gate charge for equivalent switching characteristics.

Q: Does package type affect substitution compatibility?

A: Yes. All recommended substitutes maintain TO-247-3 through-hole packaging, ensuring mechanical and electrical pin compatibility. Package type is a mandatory substitution criterion. Parts with different package types (such as surface-mount alternatives) require PCB redesign and are not considered direct substitutes.

Q: What is the impact of RoHS compliance on part selection?

A: ROHS3 compliance indicates the part meets current environmental and hazardous substance restrictions. The obsolete IRFPG50 is non-compliant, while all active substitutes (IRFPG50PBF, STW11NK100Z, IXFH6N100Q, APT8M100B) are ROHS3 compliant. For new designs and long-term production, ROHS3 compliant parts are required.

Q: Can IRFP3710PBF or IRFP4310ZPBF be used in place of IRFPG50?

A: No. These parts operate at 100V Vdss, which is insufficient for applications requiring 1000V blocking voltage. These parts are not suitable substitutes for the IRFPG50 in high-voltage applications.

Q: What is the operating temperature range compatibility?

A: The IRFPG50 operates from -55°C to 150°C. The IRFPG50PBF, STW11NK100Z, and IXFH6N100Q maintain this identical range. The Infineon parts (IRFP3710PBF, IRFP4310ZPBF, IRFP4768PBF) extend the upper limit to 175°C, providing additional thermal margin. All substitutes support the minimum -55°C to 150°C requirement.

Q: How does on-state resistance (Rds On) affect circuit performance?

A: Lower on-state resistance reduces conduction losses and heat generation during the on-state. The IRFPG50 specifies 2.0 Ohm Rds On. Substitutes with lower Rds On (STW11NK100Z at 1.38 Ohm, IXFH6N100Q at 1.9 Ohm, APT8M100B at 1.8 Ohm) provide improved efficiency and reduced thermal stress. Substitutes with higher Rds On are not recommended.