IRFPG30 N-Channel 1000V 3.1A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPG30 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 1000V drain-to-source voltage with a continuous drain current of 3.1A at 25°C. The device is packaged in a TO-247-3 through-hole configuration and dissipates up to 125W at the case temperature. The IRFPG30 is classified as obsolete, making equivalent and substitute parts necessary for new designs and ongoing production requirements. Substitute devices must maintain electrical compatibility across voltage, current, and thermal specifications while meeting modern compliance standards.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	1000	V
Continuous Drain Current (Id) @ 25°C	3.1	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	5	Ohm @ 1.9A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	80	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	980	pF @ 25V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IRFPG30 is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss) must equal or exceed 1000V
Continuous Drain Current (Id) must equal or exceed 3.1A at 25°C
Gate Threshold Voltage (Vgs(th)) must be compatible with 4V @ 250µA specification
Maximum Gate Voltage (Vgs) must accommodate ±20V operation
Operating Temperature Range must span -55°C to 150°C (TJ)

Mechanical Compatibility Criteria:

Mounting Type: Through Hole (required)
Package / Case: TO-247-3 (required)

Compliance Criteria:

RoHS Status: Preference for RoHS3 Compliant devices
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

Substitute parts are grouped into two categories: Parametric Equivalents (matching the IRFPG30 specifications exactly) and Manufacturer Recommended Alternatives (meeting or exceeding electrical specifications with enhanced performance characteristics).

Parameter Comparison

Parameter	IRFPG30	IRFPG30PBF	AOK5N100	IXFH12N100F	IXFH4N100Q	IXTH3N100P
Manufacturer	Vishay Siliconix	Vishay Siliconix	Alpha & Omega Semiconductor Inc.	IXYS	IXYS	IXYS
Vdss (V)	1000	1000	1000	1000	1000	1000
Id @ 25°C (A)	3.1	3.1	4	12	4	3
Rds On (Max) @ 10V (Ohm)	5 @ 1.9A	5 @ 1.9A	4.2 @ 2.5A	1.05 @ 6A	3 @ 2A	4.8 @ 1.5A
Vgs(th) @ 250µA (V)	4	4	4.5	5.5	5	4.5
Qg @ 10V (nC)	80	80	23	77	39	39
Vgs (Max) (V)	±20	±20	±30	±20	±20	±20
Ciss @ 25V (pF)	980	980	1150	2700	1050	1100
Power Dissipation (Max) (W)	125	125	195	300	150	125
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFPG30PBF (Parametric Equivalent)

The IRFPG30PBF is the direct parametric equivalent of the IRFPG30, maintaining identical electrical specifications including 1000V Vdss, 3.1A continuous drain current, 5Ohm Rds On, and 125W power dissipation. The primary distinction is product status: IRFPG30PBF is Active, whereas the original IRFPG30 is Obsolete. IRFPG30PBF is ROHS3 Compliant, addressing regulatory requirements for new designs. This part is the preferred direct replacement for applications requiring exact electrical performance matching.

IXTH3N100P (Parametric Equivalent)

The IXTH3N100P provides equivalent performance with 1000V Vdss and 3A continuous drain current, closely matching the IRFPG30's 3.1A specification. The device features 4.8Ohm Rds On and 125W power dissipation, maintaining thermal characteristics. IXTH3N100P is Active and ROHS3 Compliant. Gate charge is reduced to 39nC compared to 80nC in the IRFPG30, offering improved switching performance. This part is suitable for direct substitution in applications where lower gate charge is beneficial.

IXFH4N100Q (Enhanced Performance Alternative)

The IXFH4N100Q exceeds the IRFPG30 specifications with 1000V Vdss and 4A continuous drain current. Rds On is reduced to 3Ohm at 2A, and power dissipation is 150W. Gate charge is 39nC, providing faster switching characteristics. IXFH4N100Q is Active and ROHS3 Compliant. This device is suitable for applications requiring improved thermal performance or higher current capability within the same voltage class.

AOK5N100 (Enhanced Performance Alternative)

The AOK5N100 provides 1000V Vdss with 4A continuous drain current and 195W power dissipation, exceeding the IRFPG30 thermal rating. Rds On is 4.2Ohm at 2.5A, and gate charge is significantly reduced to 23nC, enabling faster switching. Maximum gate voltage is ±30V, providing additional design margin. AOK5N100 is Active and ROHS3 Compliant. This device is suitable for applications requiring enhanced thermal performance and reduced switching losses.

IXFH12N100F (High-Current Alternative)

The IXFH12N100F is a high-performance alternative with 1000V Vdss and 12A continuous drain current, significantly exceeding the IRFPG30's 3.1A rating. Rds On is 1.05Ohm at 6A, and power dissipation is 300W. Gate charge is 77nC, comparable to the IRFPG30. IXFH12N100F is Active and ROHS3 Compliant. This device is suitable for applications requiring substantially higher current handling or lower on-state losses, though it introduces higher input capacitance (2700pF) and gate charge characteristics that may require circuit redesign.

Frequently Asked Questions (FAQ)

Q: Can IRFPG30PBF be used as a direct replacement for IRFPG30?

A: Yes. IRFPG30PBF is a parametric equivalent with identical electrical specifications: 1000V Vdss, 3.1A continuous drain current, 5Ohm Rds On, and 125W power dissipation. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 Compliant vs. Non-compliant). IRFPG30PBF is the recommended direct replacement.

Q: What is the difference between parametric equivalents and manufacturer recommended alternatives?

A: Parametric equivalents match the IRFPG30 electrical specifications exactly, ensuring drop-in compatibility. Manufacturer recommended alternatives meet or exceed the IRFPG30 specifications but may offer enhanced performance characteristics such as lower Rds On, reduced gate charge, or higher power dissipation. These alternatives require circuit evaluation to confirm suitability.

Q: Are all substitute parts available in TO-247-3 packaging?

A: Yes. All substitute parts listed are packaged in TO-247-3 through-hole configuration, ensuring mechanical compatibility with the IRFPG30 footprint.

Q: What is the significance of gate charge (Qg) differences among substitute parts?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (e.g., 23nC in AOK5N100 vs. 80nC in IRFPG30) enables faster switching and reduces driver power dissipation. Higher gate charge requires more driver current but may provide more stable switching characteristics. Circuit evaluation is necessary when substituting parts with significantly different gate charge values.

Q: Are all substitute parts RoHS3 Compliant?

A: Yes. All substitute parts listed are ROHS3 Compliant, meeting current regulatory requirements. The original IRFPG30 is RoHS non-compliant, making compliant substitutes necessary for new designs and regulated applications.

Q: Can IXFH12N100F be used in place of IRFPG30 without circuit modifications?

A: IXFH12N100F meets the voltage and current requirements but introduces significant differences in input capacitance (2700pF vs. 980pF) and gate charge (77nC vs. 80nC). While the device is electrically compatible, the higher input capacitance may affect gate drive circuit performance and switching characteristics. Circuit evaluation is required before substitution.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts operate across the same temperature range as the IRFPG30: -55°C to 150°C (TJ), ensuring thermal compatibility in equivalent applications.

Q: How do Rds On differences affect device selection?

A: Rds On (on-state resistance) directly impacts power dissipation and heat generation. Lower Rds On values (e.g., 1.05Ohm in IXFH12N100F) reduce conduction losses and thermal stress, beneficial for high-current or continuous-operation applications. Higher Rds On values increase power dissipation. Selection depends on application current levels and thermal management capabilities.

Q: Is IXTH3N100P suitable for applications currently using IRFPG30?

A: Yes. IXTH3N100P provides equivalent performance with 3A continuous drain current (vs. 3.1A in IRFPG30), 1000V Vdss, and 125W power dissipation. The reduced gate charge (39nC vs. 80nC) offers improved switching performance. IXTH3N100P is Active and ROHS3 Compliant, making it a suitable direct substitute.

Q: What compliance certifications are common to all substitute parts?

A: All substitute parts share the following compliance attributes: ROHS3 Compliant, REACH Unaffected, Moisture Sensitivity Level 1 (Unlimited), and ECCN EAR99 classification. These certifications ensure regulatory compatibility for new designs and international applications.

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