IRFPF50 N-Channel 900V 6.7A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPF50 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 900V drain-to-source voltage with 6.7A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and dissipates up to 190W at the case temperature. This component is classified as Active product status and is suitable for high-voltage switching applications requiring moderate current handling in industrial and power conversion circuits.

Equivalent and substitute parts are necessary when the primary IRFPF50 is unavailable, when alternative packaging or compliance requirements are needed, or when design specifications permit operation with slightly different electrical characteristics within the same voltage and current class.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	900	V
Current - Continuous Drain (Id) @ 25°C	6.7	A (Tc)
Rds On (Max) @ Id, Vgs	1.6	Ohm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs	200	nC @ 10V
Power Dissipation (Max)	190	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IRFPF50 is determined by the following critical parameters:

Voltage Class: All substitute parts must maintain a drain-to-source voltage (Vdss) rating of 900V or higher to ensure safe operation in the intended application.

Current Rating: Substitute parts must support a continuous drain current (Id) at 25°C equal to or greater than 6.7A to handle the design load without thermal stress.

On-State Resistance (Rds On): The maximum on-state resistance must not significantly exceed 1.6 Ohm at the specified gate-source voltage (Vgs) of 10V, as this parameter directly affects power dissipation and thermal performance.

Gate Charge (Qg): Gate charge must be compatible with the drive circuit; values up to 200 nC at 10V are acceptable for standard gate driver implementations.

Power Dissipation: The device must dissipate at least 190W at the case temperature to meet thermal design requirements.

Package and Mounting: All substitute parts must use through-hole mounting in a TO-247-3 or compatible package footprint to ensure mechanical and electrical compatibility with existing PCB designs.

Operating Temperature Range: The operating temperature range of -55°C to 150°C (TJ) must be maintained or exceeded.

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications with different packaging or compliance status) and manufacturer-recommended alternatives (higher performance or different electrical characteristics within the same voltage class).

Parameter Comparison

Parameter	IRFPF50	IRFPF50PBF	STW7NK90Z	STW9NK90Z	IXFR15N100Q3
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics	IXYS
Vdss (V)	900	900	900	900	1000
Id @ 25°C (A)	6.7	6.7	5.8	8	10
Rds On (Max) @ 10V (Ohm)	1.6 @ 4A	1.6 @ 4A	2 @ 2.9A	1.3 @ 3.6A	1.2 @ 7.5A
Gate Charge (nC @ 10V)	200	200	60.5	72	64
Power Dissipation (W)	190	190	140	160	400
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	ISOPLUS247™
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active

Engineering Selection Recommendations

IRFPF50PBF (Parametric Equivalent)

The IRFPF50PBF is a direct parametric equivalent to the IRFPF50, offering identical electrical specifications including 900V Vdss, 6.7A Id, 1.6 Ohm Rds On, and 190W power dissipation. The primary distinction is packaging format (Tube) and RoHS3 compliance status. This part is suitable for applications requiring RoHS3 compliance or when tube packaging is preferred for automated assembly. All electrical performance characteristics are identical, ensuring drop-in compatibility.

STW9NK90Z (Manufacturer-Recommended Alternative)

The STW9NK90Z from STMicroelectronics maintains the 900V voltage class and provides 8A continuous drain current, exceeding the IRFPF50 specification by 1.3A. The on-state resistance is 1.3 Ohm at 10V, which is lower than the IRFPF50's 1.6 Ohm, resulting in reduced power dissipation and improved thermal performance. Gate charge is 72 nC, lower than the IRFPF50's 200 nC, enabling faster switching with compatible gate drivers. This part is suitable for applications where improved efficiency and thermal margin are beneficial. RoHS3 compliance and Active product status confirm long-term availability.

STW7NK90Z (Manufacturer-Recommended Alternative)

The STW7NK90Z from STMicroelectronics operates at 900V with 5.8A continuous drain current, which is 0.9A below the IRFPF50 specification. The on-state resistance is 2 Ohm at 10V, higher than the IRFPF50. This part is suitable only for applications where the required drain current does not exceed 5.8A and where the higher on-state resistance is acceptable. Gate charge of 60.5 nC provides faster switching characteristics. RoHS3 compliance and Active product status are confirmed.

IXFR15N100Q3 (Manufacturer-Recommended Alternative)

The IXFR15N100Q3 from IXYS is rated for 1000V Vdss and 10A continuous drain current, providing higher voltage and current margins than the IRFPF50. The on-state resistance is 1.2 Ohm at 10V, lower than the IRFPF50, and power dissipation capability is 400W, significantly exceeding the IRFPF50's 190W. Gate charge is 64 nC, substantially lower than the IRFPF50's 200 nC. The package is ISOPLUS247™, which is mechanically compatible with TO-247-3 footprints. This part is suitable for applications requiring higher performance margins, improved thermal handling, or future design upgrades. RoHS3 compliance and Active product status confirm availability.

Frequently Asked Questions (FAQ)

Q: Can the IRFPF50PBF be used as a direct replacement for the IRFPF50?

A: Yes. The IRFPF50PBF is a parametric equivalent with identical electrical specifications (900V, 6.7A, 1.6 Ohm Rds On, 190W). The difference is packaging format and RoHS3 compliance. Both parts are pin-compatible in TO-247-3 footprints and require no circuit modifications.

Q: What is the primary advantage of the STW9NK90Z over the IRFPF50?

A: The STW9NK90Z provides higher continuous drain current (8A versus 6.7A), lower on-state resistance (1.3 Ohm versus 1.6 Ohm), and significantly lower gate charge (72 nC versus 200 nC). These characteristics result in reduced power dissipation, improved thermal performance, and faster switching response. The 900V voltage rating is identical.

Q: Is the IXFR15N100Q3 a suitable replacement if my application requires higher reliability margins?

A: Yes. The IXFR15N100Q3 provides higher voltage (1000V versus 900V), higher current (10A versus 6.7A), lower on-state resistance (1.2 Ohm versus 1.6 Ohm), and significantly higher power dissipation capability (400W versus 190W). These characteristics provide substantial design margins. The ISOPLUS247™ package is mechanically compatible with TO-247-3 footprints.

Q: Are all substitute parts RoHS3 compliant?

A: The IRFPF50 is RoHS non-compliant. The IRFPF50PBF, STW7NK90Z, STW9NK90Z, and IXFR15N100Q3 are all RoHS3 compliant. If RoHS3 compliance is required, any of these alternatives are suitable.

Q: Can the STW7NK90Z be used in place of the IRFPF50?

A: The STW7NK90Z can be used only if the application's required drain current does not exceed 5.8A. The IRFPF50 is rated for 6.7A, so the STW7NK90Z has lower current capacity. The on-state resistance is also higher (2 Ohm versus 1.6 Ohm). Verify that your circuit design operates safely within the STW7NK90Z's 5.8A limit before substitution.

Q: What is the difference between TO-247-3 and ISOPLUS247™ packages?

A: Both packages are mechanically and electrically compatible for through-hole mounting applications. The ISOPLUS247™ is IXYS's proprietary variant of the TO-247-3 standard. Pin assignments and PCB footprints are identical, allowing direct substitution without layout modifications.

Q: Which substitute part offers the best thermal performance?

A: The IXFR15N100Q3 offers the best thermal performance with 400W power dissipation capability, compared to the IRFPF50's 190W. Additionally, its lower on-state resistance (1.2 Ohm) generates less heat during operation. For applications with stringent thermal requirements, the IXFR15N100Q3 is the optimal choice.

Q: Are all parts rated for the same operating temperature range?

A: Yes. All substitute parts (IRFPF50PBF, STW7NK90Z, STW9NK90Z, and IXFR15N100Q3) are rated for -55°C to 150°C junction temperature (TJ), identical to the IRFPF50.

Q: What does gate charge (Qg) mean, and why is it important for substitution?

A: Gate charge is the total charge required to switch the MOSFET from off to on state at a specified gate-source voltage. Lower gate charge enables faster switching and reduces power loss in the gate driver circuit. The IRFPF50's 200 nC gate charge is higher than most substitutes, but all listed alternatives are compatible with standard gate driver circuits rated for 10V gate drive.

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