IRFPF30PBF N-Channel 900V MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPF30PBF is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 900V drain-to-source voltage with a continuous drain current of 3.6A at 25°C. This device is packaged in a TO-247-3 through-hole configuration and is designed for high-voltage switching applications requiring robust thermal performance up to 125W power dissipation. The part is Active in product status and ROHS3 compliant.

Equivalent and substitute parts are identified when alternative devices meet or exceed the electrical and mechanical specifications of the IRFPF30PBF while maintaining compatibility with the same package type and mounting configuration. Substitutes enable design flexibility, support supply chain continuity, and provide options for performance optimization within the same application class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	3.6	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	3.7	Ohm @ 2.2A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	78	nC @ 10V
Maximum Gate Voltage (Vgs Max)	±20	V
Input Capacitance (Ciss Max) @ Vds	1200	pF @ 25V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-247-3	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFPF30PBF are identified based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 900V
Package Type: Must be TO-247-3 through-hole configuration
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Must be through-hole

Performance Enhancement Parameters: Substitute parts may exceed the following specifications without creating incompatibility:

Continuous Drain Current (Id): Substitute may exceed 3.6A
On-State Resistance (Rds On): Substitute may be lower (improved performance)
Power Dissipation: Substitute may exceed 125W
Gate Charge (Qg): Substitute may be lower (faster switching)
Maximum Gate Voltage (Vgs Max): Substitute may exceed ±20V

The STW7NK90Z from STMicroelectronics meets all critical matching parameters and provides enhanced electrical performance characteristics, making it a direct substitute for the IRFPF30PBF in applications requiring 900V N-Channel MOSFET functionality in TO-247-3 packaging.

Parameter Comparison

Parameter	IRFPF30PBF (Vishay Siliconix)	STW7NK90Z (STMicroelectronics)	Unit
Drain-to-Source Voltage (Vdss)	900	900	V
Continuous Drain Current (Id) @ 25°C	3.6	5.8	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	3.7 @ 2.2A, 10V	2.0 @ 2.9A, 10V	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ Id	4 @ 250µA	4.5 @ 100µA	V
Gate Charge (Qg Max) @ Vgs	78 @ 10V	60.5 @ 10V	nC
Maximum Gate Voltage (Vgs Max)	±20	±30	V
Input Capacitance (Ciss Max) @ Vds	1200 @ 25V	1350 @ 25V	pF
Power Dissipation (Max)	125	140	W (Tc)
Operating Temperature Range	-55 to 150	-55 to 150	°C (TJ)
Package Type	TO-247-3	TO-247-3	Through Hole
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
Product Status	Active	Active	—

Engineering Selection Recommendations

IRFPF30PBF Selection Criteria: The IRFPF30PBF is appropriate for applications where the specified 3.6A continuous drain current and 3.7Ohm on-state resistance meet design requirements. This device is Active in product status and ROHS3 compliant, supporting long-term supply availability and environmental regulatory compliance. The part is suitable for designs with established thermal management and gate drive circuits optimized for the 78nC gate charge specification.

STW7NK90Z Selection Criteria: The STW7NK90Z is appropriate for applications requiring improved electrical performance within the same 900V voltage class and TO-247-3 package footprint. The substitute device provides higher continuous drain current (5.8A versus 3.6A), lower on-state resistance (2.0Ohm versus 3.7Ohm), and reduced gate charge (60.5nC versus 78nC), resulting in lower conduction losses and faster switching characteristics. The STW7NK90Z is Active in product status, ROHS3 compliant, and REACH unaffected, supporting regulatory compliance and supply chain continuity. The higher maximum gate voltage rating (±30V versus ±20V) provides additional design margin for gate drive circuits.

Both devices support the full operating temperature range of -55°C to 150°C (TJ) and are packaged in identical TO-247-3 through-hole configurations, enabling direct mechanical and electrical substitution without PCB redesign.

Frequently Asked Questions (FAQ)

Q: Can the STW7NK90Z replace the IRFPF30PBF in existing designs without PCB modification?

A: Yes. Both devices use identical TO-247-3 through-hole packaging and share the same pin configuration. Direct mechanical substitution is possible without PCB redesign. Electrical substitution is valid because the STW7NK90Z meets or exceeds all critical specifications: 900V Vdss rating, N-Channel MOSFET technology, and -55°C to 150°C operating temperature range.

Q: What are the performance advantages of the STW7NK90Z substitute?

A: The STW7NK90Z provides three key performance improvements: (1) higher continuous drain current of 5.8A compared to 3.6A, enabling higher current handling; (2) lower on-state resistance of 2.0Ohm compared to 3.7Ohm, reducing conduction losses and heat generation; (3) lower gate charge of 60.5nC compared to 78nC, enabling faster switching transitions and reduced gate drive power requirements.

Q: Are both devices RoHS compliant?

A: Yes. Both the IRFPF30PBF and STW7NK90Z are ROHS3 compliant and have Moisture Sensitivity Level (MSL) rating of 1 (Unlimited), supporting compliance with environmental regulations and providing unlimited shelf life without moisture bake-out requirements.

Q: What is the difference in gate threshold voltage between these devices?

A: The IRFPF30PBF has a maximum gate threshold voltage of 4V at 250µA, while the STW7NK90Z has a maximum of 4.5V at 100µA. Both values fall within typical MOSFET specifications for this voltage class. Gate drive circuits designed for the IRFPF30PBF will operate the STW7NK90Z reliably, as the 10V drive voltage specified for both devices exceeds both threshold specifications.

Q: Can the IRFPF30PBF be used as a substitute for the STW7NK90Z?

A: No. The IRFPF30PBF has lower continuous drain current (3.6A versus 5.8A) and higher on-state resistance (3.7Ohm versus 2.0Ohm). Using the IRFPF30PBF in an application designed for the STW7NK90Z may result in insufficient current handling capacity and excessive power dissipation.

Q: What is the maximum gate voltage rating for each device?

A: The IRFPF30PBF has a maximum gate voltage rating of ±20V, while the STW7NK90Z has a maximum rating of ±30V. Both ratings are typical for high-voltage MOSFETs in this class. Gate drive circuits must not exceed these limits to prevent gate oxide damage.

Q: Are both devices available in active production?

A: Yes. Both the IRFPF30PBF and STW7NK90Z are Active in product status, indicating ongoing manufacturing and availability through authorized distributors.

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