IRFPF30 N-Channel 900V 3.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPF30 is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) rated for 900V drain-to-source voltage with a continuous drain current of 3.6A at 25°C. This device is packaged in a TO-247AC through-hole configuration and is designed for high-voltage switching applications. The IRFPF30 is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and component procurement. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging and product status options.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	900	V
Continuous Drain Current (Id) @ 25°C	3.6	A
On-State Resistance (Rds On) @ Id, Vgs	3.7 @ 2.2A, 10V	Ω
Gate Threshold Voltage (Vgs(th)) @ Id	4 @ 250µA	V
Power Dissipation (Max)	125	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the IRFPF30 are categorized based on electrical parameter compatibility and product availability. The primary substitution criteria are:

Critical Parameters for Substitution:

Drain-to-Source Voltage (Vdss): Must equal or exceed 900V
Continuous Drain Current (Id): Must equal or exceed 3.6A
Power Dissipation: Must equal or exceed 125W
Gate Drive Voltage: Must be compatible at 10V
Operating Temperature Range: Must encompass -55°C to 150°C
Mounting Type: Through Hole
Package Compatibility: TO-247 family packages

Substitution Categories:

Direct Parametric Equivalent: IRFPF30PBF maintains identical electrical specifications to the main part while offering active product status and RoHS3 compliance. This part is the preferred replacement for the obsolete IRFPF30.

Higher Voltage Rated Substitutes: IXTH3N100P and STW5NK100Z provide 1000V Vdss ratings, exceeding the 900V requirement. These parts accommodate applications requiring higher voltage margins while maintaining compatible current and power ratings.

Enhanced Performance Substitutes: STW7NK90Z and IXFH4N100Q offer improved on-state resistance and higher continuous drain current ratings, providing performance enhancements over the original specification.

Alternative Voltage/Current Profile: 2SK1859-E provides 900V Vdss with 6A continuous drain current, offering higher current capacity at the same voltage rating.

Parameter Comparison

Parameter	IRFPF30	IRFPF30PBF	IXTH3N100P	STW5NK100Z	STW7NK90Z	IXFH4N100Q	2SK1859-E
Manufacturer	Vishay Siliconix	Vishay Siliconix	IXYS	STMicroelectronics	STMicroelectronics	IXYS	Renesas Electronics
Vdss (V)	900	900	1000	1000	900	1000	900
Id @ 25°C (A)	3.6	3.6	3	3.5	5.8	4	6
Rds On @ Id, Vgs (Ω)	3.7 @ 2.2A, 10V	3.7 @ 2.2A, 10V	4.8 @ 1.5A, 10V	3.7 @ 1.75A, 10V	2 @ 2.9A, 10V	3 @ 2A, 10V	3 @ 3A, 10V
Vgs(th) @ Id (V)	4 @ 250µA	4 @ 250µA	4.5 @ 250µA	4.5 @ 100µA	4.5 @ 100µA	5 @ 1.5mA	—
Qg @ 10V (nC)	78	78	39	59	60.5	39	—
Power Dissipation (W)	125	125	125	125	140	150	60
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	to 150
Package	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-3P-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	Non-compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFPF30PBF

The IRFPF30PBF is the direct parametric equivalent of the obsolete IRFPF30. This part maintains identical electrical specifications including 900V Vdss, 3.6A continuous drain current, 3.7Ω on-state resistance, and 125W power dissipation. The IRFPF30PBF is classified as active product status and is RoHS3 compliant, addressing regulatory requirements and ensuring long-term availability. The only difference from the original part is packaging format (Tube versus unspecified), which does not affect electrical performance. This part is suitable for direct replacement in existing designs without circuit modification.

Secondary Recommendation for Higher Voltage Margin: IXTH3N100P or STW5NK100Z

For applications requiring enhanced voltage headroom, IXTH3N100P and STW5NK100Z provide 1000V Vdss ratings while maintaining compatible current and power specifications. IXTH3N100P delivers 3A continuous drain current with 4.8Ω on-state resistance. STW5NK100Z provides 3.5A continuous drain current with 3.7Ω on-state resistance, more closely matching the original part's current capability. Both parts are active, RoHS3 compliant, and packaged in TO-247-3 format. STW5NK100Z is preferred when current capacity is a design constraint.

Alternative for Enhanced Performance: STW7NK90Z

The STW7NK90Z maintains the 900V Vdss rating while offering significantly improved on-state resistance of 2Ω and higher continuous drain current of 5.8A. This part is suitable for applications where reduced conduction losses and improved thermal performance are beneficial. The STW7NK90Z is active, RoHS3 compliant, and packaged in TO-247-3 format.

Higher Current Alternative: 2SK1859-E

The 2SK1859-E provides 900V Vdss with 6A continuous drain current, offering increased current capacity. However, this part is packaged in TO-3P format rather than TO-247, requiring PCB layout modification. Power dissipation is rated at 60W, which is lower than the original specification. This part is suitable only when higher current capacity is required and package change is acceptable.

Not Recommended: IXFH4N100Q

While IXFH4N100Q meets voltage and current requirements with 1000V Vdss and 4A continuous drain current, the TO-247AD package variant may require verification for mechanical compatibility with existing PCB designs. This part is suitable as an alternative only when package compatibility is confirmed.

Frequently Asked Questions (FAQ)

Q: Can IRFPF30PBF be used as a direct replacement for IRFPF30?

A: Yes. IRFPF30PBF is electrically identical to IRFPF30 across all critical parameters: 900V Vdss, 3.6A continuous drain current, 3.7Ω on-state resistance, and 125W power dissipation. The primary difference is product status (Active versus Obsolete) and RoHS compliance. No circuit modifications are required.

Q: What is the advantage of using a 1000V rated part instead of 900V?

A: Higher voltage-rated parts such as IXTH3N100P and STW5NK100Z provide increased voltage margin, reducing the risk of overvoltage stress during transient conditions. These parts are suitable for applications with voltage spikes or where design margin is critical. However, they are not required for applications operating within the 900V specification.

Q: Why is 2SK1859-E not recommended as a primary substitute?

A: While 2SK1859-E provides higher current capacity (6A), it is packaged in TO-3P format rather than TO-247-3, requiring PCB layout redesign. Additionally, its power dissipation rating of 60W is lower than the original 125W specification, which may limit thermal performance in high-power applications. This part is suitable only when higher current capacity is required and package change is acceptable.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts (IRFPF30PBF, IXTH3N100P, STW5NK100Z, STW7NK90Z, IXFH4N100Q, and 2SK1859-E) are RoHS3 compliant. The original IRFPF30 is RoHS non-compliant.

Q: What is the difference between on-state resistance specifications?

A: On-state resistance (Rds On) is measured at specific drain current and gate-source voltage conditions. Lower Rds On values indicate reduced conduction losses and improved efficiency. STW7NK90Z offers the lowest Rds On at 2Ω, while IXTH3N100P has the highest at 4.8Ω. Selection depends on thermal and efficiency requirements of the application.

Q: Can substitute parts be used interchangeably in the same circuit?

A: Substitute parts with identical package (TO-247-3) and compatible electrical parameters can be used interchangeably without PCB modification. However, parts with different packages (such as 2SK1859-E in TO-3P) require PCB redesign. Verify gate charge (Qg) and input capacitance (Ciss) compatibility with driver circuits, as these parameters affect switching speed and gate drive requirements.

Q: What is gate charge and why does it matter?

A: Gate charge (Qg) is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds. IXTH3N100P and IXFH4N100Q have lower gate charge (39 nC) compared to IRFPF30 (78 nC), resulting in improved switching performance. Verify that the gate driver circuit can supply the required charge within the desired switching time.

Q: Are there any compliance or certification differences between substitute parts?

A: All substitute parts are RoHS3 compliant and carry EAR99 ECCN classification. REACH status varies: IRFPF30PBF, IXTH3N100P, STW5NK100Z, STW7NK90Z, and IXFH4N100Q are REACH Unaffected; 2SK1859-E is REACH Affected. Verify REACH compliance requirements for your specific application and region.

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