IRFPE50 Equivalent & Substitute Parts

Part Overview

The IRFPE50 is an N-Channel MOSFET rated for 800V drain-to-source voltage with 7.8A continuous drain current at 25°C and 190W maximum power dissipation. The device is housed in a TO-247AC through-hole package and is designed for high-voltage switching applications. The IRFPE50 is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	800	V
Current - Continuous Drain (Id) @ 25°C	7.8	A (Tc)
Rds On (Max) @ Id, Vgs	1.2	Ohm @ 4.7A, 10V
Power Dissipation (Max)	190	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—

Substitute Part Grouping Explanation

Substitution of the IRFPE50 is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): 800V minimum
N-Channel MOSFET technology
Operating temperature range: -55°C to 150°C
Through-hole mounting configuration
TO-247-3 package compatibility

Substitution Logic: The IRFPE50PBF is an identical electrical equivalent with the same part number base, differing only in packaging format (Tube) and product status (Active vs. Obsolete). This part provides direct functional replacement with improved availability and RoHS3 compliance.

The STW10NK80Z and STW8NK80Z are alternative N-Channel MOSFETs from STMicroelectronics rated for 800V operation in TO-247-3 packages. These devices share the same voltage rating and mounting configuration but differ in continuous drain current ratings and on-resistance characteristics. The STW10NK80Z provides higher current capability (9A vs. 7.8A), while the STW8NK80Z provides lower current capability (6.2A vs. 7.8A). Both alternatives are active products with RoHS3 compliance.

Parameter Comparison

Parameter	IRFPE50	IRFPE50PBF	STW10NK80Z	STW8NK80Z
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	800V	800V	800V	800V
Current - Continuous Drain (Id) @ 25°C	7.8A	7.8A	9A	6.2A
Rds On (Max) @ Id, Vgs	1.2Ω @ 4.7A, 10V	1.2Ω @ 4.7A, 10V	0.9Ω @ 4.5A, 10V	1.5Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4.5V @ 100µA	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V	200nC @ 10V	72nC @ 10V	46nC @ 10V
Vgs (Max)	±20V	±20V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 25V	3100pF @ 25V	2180pF @ 25V	1320pF @ 25V
Power Dissipation (Max)	190W	190W	160W	140W
Operating Temperature	-55 to 150°C	-55 to 150°C	-55 to 150°C	-55 to 150°C
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFPE50PBF is the primary direct substitute for the obsolete IRFPE50. Both parts share identical electrical specifications and TO-247-3 packaging. The IRFPE50PBF is an active product with ROHS3 compliance and significantly higher inventory availability (15,831 pcs vs. 1,435 pcs). This part is suitable for direct replacement in existing designs without circuit modification.

STW10NK80Z is an alternative substitute for applications requiring equal or higher continuous drain current. This device provides 9A continuous current capability compared to the IRFPE50's 7.8A, with improved on-resistance (0.9Ω vs. 1.2Ω) and reduced gate charge (72nC vs. 200nC). The STW10NK80Z is an active product with ROHS3 compliance. Circuit design review is required to confirm compatibility with the reduced power dissipation rating (160W vs. 190W) and different gate charge characteristics.

STW8NK80Z is an alternative substitute for applications with lower continuous drain current requirements. This device provides 6.2A continuous current capability with higher on-resistance (1.5Ω vs. 1.2Ω) and significantly reduced gate charge (46nC vs. 200nC). The STW8NK80Z is an active product with ROHS3 compliance. Circuit design review is required to confirm compatibility with the reduced power dissipation rating (140W vs. 190W) and different gate charge characteristics.

All substitute parts maintain the 800V voltage rating, TO-247-3 package configuration, and -55°C to 150°C operating temperature range of the original IRFPE50.

Frequently Asked Questions (FAQ)

Q: Can the IRFPE50PBF be used as a direct replacement for the IRFPE50?

A: Yes. The IRFPE50PBF is electrically and mechanically identical to the IRFPE50. Both parts have the same drain-to-source voltage (800V), continuous drain current (7.8A), on-resistance (1.2Ω), power dissipation (190W), and TO-247-3 package configuration. The primary difference is product status (Active vs. Obsolete) and RoHS compliance level.

Q: What are the key differences between the IRFPE50 and the STW10NK80Z?

A: The STW10NK80Z provides higher continuous drain current (9A vs. 7.8A) and lower on-resistance (0.9Ω vs. 1.2Ω), resulting in improved efficiency. However, the STW10NK80Z has lower maximum power dissipation (160W vs. 190W), reduced gate charge (72nC vs. 200nC), and higher maximum gate-source voltage (±30V vs. ±20V). Both devices share the same 800V voltage rating and TO-247-3 package.

Q: What are the key differences between the IRFPE50 and the STW8NK80Z?

A: The STW8NK80Z provides lower continuous drain current (6.2A vs. 7.8A) and higher on-resistance (1.5Ω vs. 1.2Ω). The STW8NK80Z has lower maximum power dissipation (140W vs. 190W) and significantly reduced gate charge (46nC vs. 200nC). Both devices share the same 800V voltage rating and TO-247-3 package.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. The IRFPE50PBF, STW10NK80Z, and STW8NK80Z are all housed in TO-247-3 through-hole packages, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions.

Q: Which substitute part should be selected for a direct replacement application?

A: The IRFPE50PBF is the appropriate choice for direct replacement. It provides identical electrical specifications and packaging to the obsolete IRFPE50 with the added benefit of active product status and RoHS3 compliance.

Q: Can the STW10NK80Z or STW8NK80Z be used in applications originally designed for the IRFPE50?

A: The STW10NK80Z and STW8NK80Z can be used only if circuit design review confirms compatibility with their different electrical characteristics, particularly the reduced power dissipation ratings, different on-resistance values, and reduced gate charge. These devices are not direct pin-for-pin replacements in terms of electrical performance.

Q: What is the operating temperature range for all substitute parts?

A: All substitute parts (IRFPE50PBF, STW10NK80Z, and STW8NK80Z) operate across the same temperature range as the original IRFPE50: -55°C to 150°C junction temperature.

Q: Are all substitute parts RoHS compliant?

A: The IRFPE50PBF, STW10NK80Z, and STW8NK80Z are all ROHS3 compliant. The original IRFPE50 is RoHS non-compliant.

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