IRFPE40 N-Channel MOSFET 800V 5.4A Equivalent & Substitute Parts

Part Overview

The IRFPE40 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 800V drain-to-source voltage with 5.4A continuous drain current at 25°C. The device is housed in a TO-247-3 through-hole package and dissipates up to 150W at the case temperature. This part is classified as obsolete, making identification of equivalent and substitute components necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IRFPE40

Vishay SiliconixIn Stock: 2808IRFPE40 Datasheet

Current PartRFQ

IRFPE40PBF

Vishay SiliconixIn Stock: 1213IRFPE40PBF Datasheet

Parametric EquivalentRFQ

STW8NK80Z

STMicroelectronicsIn Stock: 14366STW8NK80Z Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFPE40 is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

• Drain-to-Source Voltage (Vdss): 800V minimum
• FET Type: N-Channel MOSFET (Metal Oxide Semiconductor)
• Package: TO-247-3 through-hole configuration
• Operating Temperature Range: -55°C to 150°C (TJ)

Secondary Compatibility Parameters:

• Continuous Drain Current (Id): 5.4A or greater at 25°C
• On-State Resistance (Rds On): 2Ohm or lower at specified gate voltage
• Gate Threshold Voltage (Vgs(th)): 4V or lower at specified drain current
• Power Dissipation: 150W or greater at case temperature

Substitute parts must satisfy all primary criteria and maintain compatibility within the secondary parameter ranges to ensure functional equivalence in circuit applications.

Parameter Comparison

Engineering Selection Recommendations

IRFPE40PBF (Parametric Equivalent): IRFPE40PBF is a direct parametric equivalent to the IRFPE40, manufactured by the same supplier (Vishay Siliconix) with identical electrical specifications. The primary distinction is packaging format (tube) and product status (Last Time Buy). IRFPE40PBF achieves ROHS3 compliance, whereas the original IRFPE40 is non-compliant. This substitute is suitable for applications requiring regulatory compliance or long-term supply chain stability. Electrical performance and thermal characteristics are identical.

STW8NK80Z (Manufacturer-Recommended Substitute): STW8NK80Z, manufactured by STMicroelectronics, is a manufacturer-recommended substitute offering enhanced electrical performance within the same voltage and package class. Key advantages include higher continuous drain current (6.2A versus 5.4A), lower on-state resistance (1.5Ohm versus 2Ohm), reduced gate charge (46nC versus 130nC), and lower input capacitance (1320pF versus 1900pF). The device maintains 800V Vdss rating, TO-247-3 package configuration, and identical operating temperature range. STW8NK80Z is classified as Active product status with ROHS3 compliance. Power dissipation is rated at 140W, which is 10W lower than the original part. This substitute is appropriate for new designs and applications where improved switching characteristics and regulatory compliance are required.

Frequently Asked Questions (FAQ)

Q: Can IRFPE40PBF be used as a direct replacement for IRFPE40?

A: Yes. IRFPE40PBF is a parametric equivalent with identical electrical specifications, drain current rating, on-state resistance, and thermal characteristics. The primary differences are packaging format (tube versus unspecified) and product status (Last Time Buy versus Obsolete). Both devices are housed in TO-247-3 packages and operate across the same temperature range.

Q: What are the advantages of STW8NK80Z over IRFPE40?

A: STW8NK80Z provides superior electrical performance: 6.2A continuous drain current (versus 5.4A), lower on-state resistance of 1.5Ohm (versus 2Ohm), significantly reduced gate charge of 46nC (versus 130nC), and lower input capacitance of 1320pF (versus 1900pF). These characteristics result in faster switching, reduced gate drive power requirements, and improved thermal efficiency. STW8NK80Z is also Active product status with ROHS3 compliance.

Q: Are all three parts compatible with the same circuit board layout?

A: Yes. IRFPE40, IRFPE40PBF, and STW8NK80Z all use the TO-247-3 through-hole package configuration, ensuring mechanical and electrical compatibility with existing PCB designs. No layout modifications are required for substitution.

Q: What is the significance of the product status difference?

A: IRFPE40 is classified as Obsolete, indicating discontinued production and limited availability. IRFPE40PBF is Last Time Buy, signifying final production runs with defined end-of-life dates. STW8NK80Z is Active, indicating ongoing production and long-term availability. For new designs and long-term supply chain requirements, Active status parts are preferred.

Q: Does RoHS compliance affect electrical performance?

A: No. RoHS compliance is a regulatory and material composition requirement that does not alter electrical performance, thermal characteristics, or functional behavior. IRFPE40PBF and STW8NK80Z achieve ROHS3 compliance while maintaining or exceeding the electrical specifications of the non-compliant IRFPE40.

Q: Can STW8NK80Z be used in applications designed for IRFPE40 without circuit modifications?

A: Yes. STW8NK80Z maintains the same 800V Vdss rating, TO-247-3 package, and operating temperature range as IRFPE40. The improved electrical characteristics (lower Rds On, reduced gate charge, lower capacitance) are beneficial and do not require circuit redesign. However, gate drive circuits may benefit from optimization to exploit the reduced gate charge characteristics.

Q: What is the difference between gate charge specifications?

A: Gate charge (Qg) represents the total charge required to switch the MOSFET from off to on state. IRFPE40 and IRFPE40PBF require 130nC at 10V gate voltage, while STW8NK80Z requires only 46nC. Lower gate charge reduces gate drive power dissipation and enables faster switching transitions, beneficial for high-frequency applications.