IRFPC60LC N-Channel 600V 16A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPC60LC is an N-Channel 600V 16A MOSFET manufactured by Vishay Siliconix in a TO-247AC through-hole package. This device is classified as obsolete product status. The IRFPC60LC serves applications requiring high-voltage switching with moderate current handling in power conversion, motor control, and industrial switching circuits. Due to its obsolete status, equivalent and substitute parts with active product status or improved specifications are necessary for new designs and ongoing production requirements.

Substiute Parts

IRFPC60LC
Vishay SiliconixIn Stock: 929IRFPC60LC Datasheet
IRFPC60LC
Current Part
IRFPC60LCPBF
Vishay SiliconixIn Stock: 1539IRFPC60LCPBF Datasheet
IRFPC60LCPBF
Parametric Equivalent
AOK20N60L
Alpha & Omega Semiconductor Inc.In Stock: 8108AOK20N60L Datasheet
AOK20N60L
MFR Recommended
IXFH14N60P
IXYSIn Stock: 1090IXFH14N60P Datasheet
IXFH14N60P
MFR Recommended
IXFH18N60P
IXYSIn Stock: 5583IXFH18N60P Datasheet
IXFH18N60P
MFR Recommended
IXFH22N60P3
IXYSIn Stock: 87106IXFH22N60P3 Datasheet
IXFH22N60P3
MFR Recommended
IXFH24N80P
IXYSIn Stock: 2251IXFH24N80P Datasheet
IXFH24N80P
MFR Recommended
IXTX32P60P
IXYSIn Stock: 1681IXTX32P60P Datasheet
IXTX32P60P
MFR Recommended
STW13NK60Z
STMicroelectronicsIn Stock: 2784STW13NK60Z Datasheet
STW13NK60Z
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 16 A (Tc)
On-State Resistance (Rds On) @ 9.6A, 10V 400 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 120 nC
Power Dissipation (Max) 280 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-247-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFPC60LC is determined by the following critical parameters: Drain to Source Voltage (Vdss), Continuous Drain Current (Id), On-State Resistance (Rds On), Package Type (TO-247-3), and FET Type (N-Channel). All substitute parts must maintain the same voltage class (600V) and package configuration to ensure mechanical and electrical compatibility. Current rating, on-state resistance, and gate charge characteristics determine functional equivalence and performance suitability.

Substitute parts are grouped into two categories:

Parametric Equivalent: Parts with identical or superior electrical specifications and active product status, suitable for direct replacement.

Manufacturer Recommended: Parts with enhanced specifications (higher current rating, lower Rds On, or higher power dissipation) that provide improved performance while maintaining voltage class and package compatibility.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Power Dissipation (W) Package Product Status RoHS Status
IRFPC60LC Vishay Siliconix 600 16 400 120 280 TO-247-3 Obsolete Non-compliant
IRFPC60LCPBF Vishay Siliconix 600 16 400 120 280 TO-247-3 Active ROHS3 Compliant
AOK20N60L Alpha & Omega Semiconductor Inc. 600 20 370 74 417 TO-247-3 Obsolete ROHS3 Compliant
IXFH14N60P IXYS 600 14 550 36 300 TO-247-3 Active ROHS3 Compliant
IXFH18N60P IXYS 600 18 400 50 360 TO-247-3 Active ROHS3 Compliant
IXFH22N60P3 IXYS 600 22 360 38 500 TO-247-3 Active ROHS3 Compliant
IXFH24N80P IXYS 800 24 400 105 650 TO-247-3 Active ROHS3 Compliant
STW13NK60Z STMicroelectronics 600 13 550 92 150 TO-247-3 Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

IRFPC60LCPBF is the direct parametric equivalent to IRFPC60LC. This part maintains identical electrical specifications (600V, 16A, 400mOhm Rds On, 280W power dissipation) and TO-247-3 package configuration. IRFPC60LCPBF carries active product status and ROHS3 compliance, making it the preferred choice for applications requiring exact specification matching and regulatory compliance.

Enhanced Performance Substitutes (600V Class):

IXFH18N60P and IXFH22N60P3 provide improved performance within the 600V voltage class. IXFH18N60P offers 18A continuous current with 400mOhm Rds On and 360W power dissipation. IXFH22N60P3 delivers 22A continuous current with 360mOhm Rds On and 500W power dissipation. Both devices feature active product status and ROHS3 compliance. These parts are suitable for applications where higher current capacity or improved thermal performance is beneficial.

Higher Voltage Alternative:

IXFH24N80P operates at 800V with 24A continuous current and 650W power dissipation. This part is appropriate for applications requiring higher voltage margin or enhanced power handling. Active product status and ROHS3 compliance are confirmed.

Lower Current Alternatives:

IXFH14N60P and STW13NK60Z provide lower current ratings (14A and 13A respectively) with 600V voltage class. These parts are suitable only for applications with reduced current requirements and are not recommended as direct substitutes for the IRFPC60LC in circuits designed for 16A operation.

Frequently Asked Questions (FAQ)

Q: Can IRFPC60LCPBF be used as a direct replacement for IRFPC60LC?

A: Yes. IRFPC60LCPBF is a parametric equivalent with identical electrical specifications and TO-247-3 package configuration. The primary difference is product status (active versus obsolete) and RoHS compliance (ROHS3 compliant versus non-compliant). IRFPC60LCPBF is the recommended replacement for new designs and production.

Q: What is the difference between IXFH18N60P and IXFH22N60P3?

A: Both parts operate at 600V with TO-247-3 packaging. IXFH18N60P provides 18A continuous current with 400mOhm Rds On and 360W power dissipation. IXFH22N60P3 provides 22A continuous current with 360mOhm Rds On and 500W power dissipation. IXFH22N60P3 offers higher current capacity and lower on-state resistance, resulting in improved thermal performance and reduced conduction losses.

Q: Why is IXFH24N80P listed as a substitute if it operates at 800V?

A: IXFH24N80P is a higher voltage alternative suitable for applications where the circuit topology or design margin permits operation at 800V. The 800V rating provides additional voltage headroom. This part is not a direct substitute for 600V-rated circuits but may be used in designs where voltage class flexibility exists.

Q: Are all substitute parts available in the same TO-247-3 package?

A: Yes. All substitute parts listed operate in TO-247-3 through-hole package configuration, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions designed for the IRFPC60LC.

Q: What is the significance of RoHS compliance in selecting a substitute?

A: RoHS compliance is a regulatory requirement for products sold into markets with environmental restrictions. IRFPC60LC is RoHS non-compliant, while IRFPC60LCPBF and all other listed substitutes are ROHS3 compliant. For new designs and production in regulated markets, ROHS3-compliant parts are mandatory.

Q: Can lower current-rated parts such as IXFH14N60P or STW13NK60Z replace the IRFPC60LC?

A: No. IXFH14N60P (14A) and STW13NK60Z (13A) have continuous current ratings below the IRFPC60LC specification of 16A. These parts are not suitable for circuits designed to operate at 16A continuous current and will result in thermal stress and potential device failure.

Q: What is the impact of on-state resistance (Rds On) differences on circuit performance?

A: On-state resistance directly affects conduction losses and heat dissipation. Lower Rds On values reduce power loss and operating temperature. IXFH22N60P3 (360mOhm) and AOK20N60L (370mOhm) provide lower Rds On compared to IRFPC60LC (400mOhm), resulting in improved efficiency and reduced thermal management requirements.

Q: Is gate charge (Qg) a critical parameter for substitution?

A: Gate charge affects gate drive circuit design and switching speed. IRFPC60LC has 120nC gate charge. Substitutes with lower gate charge (such as IXFH14N60P at 36nC or IXFH22N60P3 at 38nC) require less gate drive energy and enable faster switching. Higher gate charge values require proportionally higher gate drive capability. Gate charge differences must be evaluated against existing gate drive circuit specifications.

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