IRFPC50PBF N-Channel 600V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPC50PBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in a TO-247AC through-hole configuration and is designed for high-voltage switching applications requiring robust thermal performance up to 180W. The part maintains Active product status and is RoHS3 compliant with unlimited moisture sensitivity rating.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-state resistance characteristics, and compatible through-hole packaging. Substitutes must maintain functional compatibility within the specified operating temperature range of -55°C to 150°C.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	11	A (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 6A, 10V	Ω
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	140	nC @ 10V
Power Dissipation (Max)	180	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-247-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRFPC50PBF are selected based on the following substitution criteria:

Primary Matching Parameters:

Drain-to-Source Voltage (Vdss): Equal to or greater than 600V
Continuous Drain Current (Id): Equal to or greater than 11A at 25°C
Mounting Type: Through Hole configuration
Package Type: TO-247 family (TO-247-3 or TO-247AD compatible)
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

On-state resistance (Rds On) characteristics at specified gate voltage
Gate threshold voltage (Vgs(th)) within acceptable switching range
Gate charge (Qg) for drive circuit compatibility
Power dissipation capability for thermal management

All identified substitutes meet or exceed the electrical performance envelope of the IRFPC50PBF while maintaining mechanical and thermal compatibility through standardized TO-247 through-hole packaging.

Parameter Comparison

Parameter	IRFPC50PBF (Main)	STW10NK60Z	IXFH14N60P	IXFH16N80P
Manufacturer	Vishay Siliconix	STMicroelectronics	IXYS	IXYS
Drain to Source Voltage (Vdss)	600 V	600 V	600 V	800 V
Current - Continuous Drain (Id) @ 25°C	11 A (Tc)	10 A (Tc)	14 A (Tc)	16 A (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 6A, 10V	750 mOhm @ 4.5A, 10V	550 mOhm @ 7A, 10V	600 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id	4 V @ 250µA	4.5 V @ 250µA	5.5 V @ 2.5mA	5 V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	140 nC @ 10V	70 nC @ 10V	36 nC @ 10V	71 nC @ 10V
Power Dissipation (Max)	180 W (Tc)	156 W (Tc)	300 W (Tc)	460 W (Tc)
Operating Temperature Range	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)	-55 to 150 °C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

STW10NK60Z (STMicroelectronics)

The STW10NK60Z is a direct voltage-class equivalent operating at 600V with 10A continuous drain current. This substitute provides lower gate charge (70 nC versus 140 nC), enabling faster switching transitions and reduced drive circuit power consumption. The STW10NK60Z is manufactured under the SuperMESH™ technology platform and maintains full RoHS3 compliance. This part is suitable for applications where the 1A reduction in continuous current rating is acceptable and where lower gate charge is beneficial for drive circuit efficiency.

IXFH14N60P (IXYS)

The IXFH14N60P operates at the same 600V voltage rating with 14A continuous drain current, exceeding the IRFPC50PBF by 3A. This HiPerFET™ series device features superior on-state resistance (550 mOhm at 7A versus 600 mOhm at 6A) and significantly lower gate charge (36 nC versus 140 nC). Power dissipation capability is increased to 300W. The IXFH14N60P is packaged in TO-247AD configuration, maintaining mechanical compatibility with TO-247-3 through-hole mounting. RoHS3 compliance and REACH unaffected status are confirmed.

IXFH16N80P (IXYS)

The IXFH16N80P provides enhanced voltage rating at 800V with 16A continuous drain current, offering increased design margin for high-voltage applications. This HiPerFET™ series device delivers 460W power dissipation capability and significantly reduced gate charge (71 nC). The higher voltage rating enables use in applications requiring greater transient voltage withstand capability. TO-247AD packaging maintains through-hole compatibility. RoHS3 compliance and REACH unaffected status are confirmed.

All substitute parts maintain Active product status, unlimited moisture sensitivity rating (MSL 1), and EAR99 export classification consistent with the IRFPC50PBF.

Frequently Asked Questions (FAQ)

Q: Can the STW10NK60Z replace the IRFPC50PBF in all applications?

A: The STW10NK60Z is electrically compatible at the 600V voltage class with matching operating temperature range and RoHS3 compliance. However, the 1A reduction in continuous drain current (10A versus 11A) must be evaluated against application thermal and current requirements. The lower gate charge (70 nC) may require drive circuit adjustment for optimal switching performance.

Q: What is the primary advantage of the IXFH14N60P substitute?

A: The IXFH14N60P provides higher continuous drain current (14A), lower on-state resistance (550 mOhm), and significantly reduced gate charge (36 nC). These characteristics enable improved thermal performance and faster switching transitions. The 300W power dissipation rating provides additional thermal margin compared to the 180W rating of the IRFPC50PBF.

Q: Is the IXFH16N80P suitable for 600V applications?

A: Yes. The IXFH16N80P is rated for 800V operation, which exceeds the 600V requirement of the IRFPC50PBF. This higher voltage rating provides additional design margin and transient overvoltage protection. The device is fully compatible with 600V circuit designs and may be preferred in applications subject to voltage transients or where future design upgrades to higher voltage operation are anticipated.

Q: Are all substitute parts available in the same TO-247-3 package?

A: The STW10NK60Z is packaged in TO-247-3. The IXFH14N60P and IXFH16N80P are packaged in TO-247AD (IXFH variant). Both TO-247-3 and TO-247AD are mechanically compatible through-hole configurations with identical pin assignments and mounting footprints, enabling direct board-level substitution without layout modification.

Q: Do all substitute parts meet RoHS3 compliance requirements?

A: Yes. The STW10NK60Z, IXFH14N60P, and IXFH16N80P are all RoHS3 compliant. The IXYS devices additionally carry REACH unaffected status. All parts maintain unlimited moisture sensitivity rating (MSL 1) consistent with the IRFPC50PBF.

Q: How does gate charge affect circuit design when substituting parts?

A: Gate charge (Qg) determines the total charge required to switch the MOSFET from off to on state. The IRFPC50PBF requires 140 nC, while substitutes range from 36 nC (IXFH14N60P) to 70 nC (STW10NK60Z). Lower gate charge reduces drive circuit power dissipation and enables faster switching. Drive circuits must supply sufficient current to charge the gate within the required switching time; lower gate charge allows faster transitions with the same drive current.

Q: What is the operating temperature range for all parts?

A: All parts, including the IRFPC50PBF and all substitutes, operate across the temperature range of -55°C to 150°C (junction temperature). This identical temperature specification ensures thermal compatibility across the full operating envelope.

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