IRFPC50LCPBF N-Channel 600V 11A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFPC50LCPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 11A continuous drain current at 25°C. This device is packaged in TO-247-3 through-hole configuration and is designed for high-voltage switching applications. The part is currently active in production with 3490 units in stock. Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters while maintaining compatible package and mounting specifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	11	A
On-State Resistance (Rds On) @ 10V	600	mOhm
Gate Charge (Qg) @ 10V	84	nC
Power Dissipation (Max)	190	W
Operating Temperature Range	-55 to 150	°C
Package Type	TO-247-3	—
Mounting Type	Through Hole	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFPC50LCPBF is determined by the following critical parameters:

Mandatory Matching Criteria:

FET Type: N-Channel
Package/Case: TO-247-3 or compatible TO-247 variant
Mounting Type: Through Hole
Operating Temperature Range: -55°C to 150°C (minimum)
RoHS Compliance: ROHS3 Compliant

Electrical Performance Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 600V
Continuous Drain Current (Id) @ 25°C: Equal to or greater than 11A
On-State Resistance (Rds On) @ 10V: Equal to or lower than 600mOhm
Power Dissipation (Max): Equal to or greater than 190W
Gate Charge (Qg) @ 10V: Lower values preferred for faster switching

All substitute parts listed meet these criteria and are classified as direct equivalents or performance-enhanced alternatives suitable for applications requiring the IRFPC50LCPBF electrical and mechanical specifications.

Parameter Comparison

Parameter	IRFPC50LCPBF	STW10NK60Z	IXFH14N60P	IXFH16N80P	APT11N80BC3G
Manufacturer	Vishay Siliconix	STMicroelectronics	IXYS	IXYS	Microchip Technology
Vdss (V)	600	600	600	800	800
Id @ 25°C (A)	11	10	14	16	11
Rds On @ 10V (mOhm)	600	750	550	600	450
Qg @ 10V (nC)	84	70	36	71	60
Power Dissipation (W)	190	156	300	460	156
Package	TO-247-3	TO-247-3	TO-247AD	TO-247AD	TO-247 [B]
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active	Active
Inventory (Pcs)	3490	3846	1007	20326	933

Engineering Selection Recommendations

STW10NK60Z (STMicroelectronics) The STW10NK60Z is a direct voltage and package equivalent with matching 600V Vdss rating and TO-247-3 package. Continuous drain current is rated at 10A, which is 1A lower than the IRFPC50LCPBF. On-state resistance is 750mOhm, 150mOhm higher than the main part. This substitute is suitable for applications where the 10A current rating is sufficient and slightly higher conduction losses are acceptable. All compliance certifications match the main part.

IXFH14N60P (IXYS) The IXFH14N60P maintains the 600V Vdss rating with improved continuous drain current of 14A and lower on-state resistance of 550mOhm. Power dissipation capability is significantly higher at 300W. This part is suitable for applications requiring higher current capacity or lower conduction losses. Package variant is TO-247AD, which is mechanically compatible with TO-247-3 applications. All compliance certifications are met.

IXFH16N80P (IXYS) The IXFH16N80P offers enhanced voltage rating of 800V with 16A continuous drain current and 460W power dissipation. On-state resistance is 600mOhm, matching the main part specification. This substitute is appropriate for applications requiring higher voltage margin or increased current capacity. Package is TO-247AD, compatible with TO-247-3 mounting. All compliance certifications are satisfied.

APT11N80BC3G (Microchip Technology) The APT11N80BC3G provides 800V Vdss rating with 11A continuous drain current matching the main part. On-state resistance is 450mOhm, 150mOhm lower than the IRFPC50LCPBF, offering reduced conduction losses. Power dissipation is 156W. This substitute is suitable for applications where lower on-state resistance and higher voltage rating are beneficial. Package is TO-247 [B], mechanically compatible with TO-247-3. All compliance certifications are met.

All substitute parts are active products with current production status and ROHS3 compliance, ensuring long-term availability and regulatory conformance.

Frequently Asked Questions (FAQ)

Q: Can the STW10NK60Z replace the IRFPC50LCPBF in all applications? A: The STW10NK60Z is suitable for applications where 10A continuous drain current is sufficient. The 1A lower current rating and 150mOhm higher on-state resistance must be evaluated against circuit requirements. Both parts share identical 600V Vdss rating and TO-247-3 package.

Q: What is the difference between TO-247-3 and TO-247AD packages? A: TO-247-3 and TO-247AD are both three-lead through-hole packages with identical pin spacing and mounting hole patterns. TO-247AD is a variant designation used by IXYS. Both are mechanically interchangeable in standard TO-247 footprints.

Q: Why would I select IXFH14N60P over the IRFPC50LCPBF? A: The IXFH14N60P offers 14A continuous drain current versus 11A, 300W power dissipation versus 190W, and lower on-state resistance of 550mOhm versus 600mOhm. These improvements reduce conduction losses and provide higher current capacity for demanding applications.

Q: Is the APT11N80BC3G suitable for 600V applications? A: Yes. The APT11N80BC3G is rated for 800V Vdss, which exceeds the 600V requirement of the IRFPC50LCPBF. The higher voltage rating provides additional safety margin and is fully compatible with 600V circuit designs.

Q: What is the significance of lower gate charge (Qg)? A: Lower gate charge reduces the energy required to switch the MOSFET on and off, resulting in faster switching transitions and lower gate drive power consumption. IXFH14N60P has 36nC gate charge compared to 84nC for the IRFPC50LCPBF, enabling higher switching frequencies.

Q: Are all substitute parts RoHS3 compliant? A: Yes. All substitute parts listed are ROHS3 compliant, matching the environmental and regulatory compliance of the IRFPC50LCPBF.

Q: Can I use IXFH16N80P in a circuit designed for 11A at 600V? A: Yes. The IXFH16N80P exceeds the current and voltage requirements with 16A at 800V rating. The higher ratings provide design margin and are fully compatible with circuits specified for 11A at 600V operation.

Q: What is the impact of higher on-state resistance? A: Higher on-state resistance increases conduction losses and heat dissipation. STW10NK60Z has 750mOhm versus 600mOhm for the IRFPC50LCPBF. Thermal management and power budget must be evaluated when selecting parts with higher Rds On values.

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